Solid-state imaging device, method of producing the same, and electronic apparatus

1 . A solid-state imaging device, comprising:

a first semiconductor base;

a second semiconductor base bonded to the first semiconductor base; and

a conductive polymer,

the first semiconductor base including

a first semiconductor layer in which a photoelectric conversion unit for performing photoelectric conversion is provided,

a first multilayer wiring layer stacked on the first semiconductor layer, and

a first metal pad formed on a surface of the first multilayer wiring layer on a side opposite to a surface thereof on a side of the first semiconductor layer,

the second semiconductor base including

a second semiconductor layer in which an active element is provided,

a second multilayer wiring layer stacked on the second semiconductor layer, and

a second metal pad formed on a surface of the second multilayer wiring layer on a side opposite to a surface thereof on a side of the second semiconductor layer,

wherein the conductive polymer is interposed between the first metal pad and the second metal pad and electrically connecting the first metal pad and the second metal pad to each other, and

wherein the conductive polymer has a chain length equal to or greater than a recess amount that is a sum of a recessed amount of the first metal pad and a recessed amount of the second metal pad.

2 . The solid-state imaging device according to claim 1 , wherein

the conductive polymer includes, at both ends thereof, functional groups that are bonded to the first metal pad and the second metal pad.

3 . A solid-state imaging device, comprising:

a first semiconductor base;

a second semiconductor base bonded to the first semiconductor base; and

a conductive polymer,

the first semiconductor base including

a first semiconductor layer in which a photoelectric conversion unit for performing photoelectric conversion is provided,

a first multilayer wiring layer stacked on the first semiconductor layer, and

a first metal pad formed on a surface of the first multilayer wiring layer on a side opposite to a surface thereof on a side of the first semiconductor layer,

the second semiconductor base including

a second semiconductor layer in which an active element is provided,

a second multilayer wiring layer stacked on the second semiconductor layer, and

a second metal pad formed on a surface of the second multilayer wiring layer on a side opposite to a surface thereof on a side of the second semiconductor layer,

wherein the conductive polymer is interposed between the first metal pad and the second metal pad and electrically connecting the first metal pad and the second metal pad to each other, and

wherein the conductive polymer includes a first conductive polymer having a first chain length and a second conductive polymer having a second chain length shorter than the first chain length.

4 . The solid-state imaging device according to claim 1 , wherein

the conductive polymer has flexibility.

5 . The solid-state imaging device according to claim 1 , wherein

an insulation layer of the first multilayer wiring layer of the first semiconductor base is bonded to an insulation layer of the second multilayer wiring layer of the second semiconductor base.

6 . An electronic apparatus, comprising:

a solid-state imaging device that includes a first semiconductor base, a second semiconductor base bonded to the first semiconductor base, and a conductive polymer; and

an optical system that forms an image of image light from a subject on the solid-state imaging device,

the first semiconductor base including

a first semiconductor layer in which a photoelectric conversion unit for performing photoelectric conversion is provided,

a first multilayer wiring layer stacked on the first semiconductor layer, and

a first metal pad formed on a surface of the first multilayer wiring layer on a side opposite to a surface thereof on a side of the first semiconductor layer,

the second semiconductor base including

a second semiconductor layer in which an active element is provided,

a second multilayer wiring layer stacked on the second semiconductor layer, and

a second metal pad formed on a surface of the second multilayer wiring layer on a side opposite to a surface thereof on a side of the second semiconductor layer,

wherein the conductive polymer is interposed between the first metal pad and the second metal pad and electrically connecting the first metal pad and the second metal pad to each other, and

wherein the conductive polymer has a chain length equal to or greater than a recess amount that is a sum of a recessed amount of the first metal pad and a recessed amount of the second metal pad.

7 . The electronic apparatus according to claim 6 , wherein

the conductive polymer includes, at both ends thereof, functional groups that are bonded to the first metal pad and the second metal pad.

8 . The electronic apparatus according to claim 6 , wherein

the conductive polymer has flexibility.

9 . The electronic apparatus according to claim 6 , wherein

an insulation layer of the first multilayer wiring layer of the first semiconductor base is bonded to an insulation layer of the second multilayer wiring layer of the second semiconductor base.

10 . The solid-state imaging device according to claim 3 , wherein

an insulation layer of the first multilayer wiring layer of the first semiconductor base is bonded to an insulation layer of the second multilayer wiring layer of the second semiconductor base.