Photoelectric conversion device
A photoelectric conversion device including pixels arranged in a semiconductor layer including first and second main surfaces is provided. Each of the pixels includes a first photodiode including a first region of a first conductivity type where signal charges are accumulated, a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region, and including a second region of the first conductivity type where signal charges are accumulated, a third region of a second conductivity type arranged between the first and second region, and a first electrode arranged on the first main surface so as to cover the first region. Signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.
1 . A photoelectric conversion device including a plurality of pixels arranged in a semiconductor layer comprising a first main surface and a second main surface on an opposite side of the first main surface,
wherein each of the plurality of pixels comprises:
a first photodiode including a first region of a first conductivity type where signal charges are accumulated, wherein the first region forms a part of the first main surface;
a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region in an orthogonal projection with respect to the first main surface, and including a second region of the first conductivity type where signal charges are accumulated;
a third region of a second conductivity type opposite to the first conductivity type arranged between the first region and the second region; and
a first electrode arranged on the first main surface so as to cover the first region, and
signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.
2 . The device according to claim 1 , wherein the first electrode is a semiconductor of the first conductivity type.
3 . The device according to claim 1 , wherein a work function of the first region is equal to a work function of the first electrode.
4 . The device according to claim 1 , wherein each of the plurality of pixels further comprises a fourth region of the second conductivity type arranged between the second main surface and the second region, a fifth region of the first conductivity type arranged between the fourth region and the second region, where an impurity concentration is lower than in the second region, and a sixth region of the second conductivity type arranged between the third region and the fourth region so as to surround the second region and the fifth region.
5 . The device according to claim 4 , wherein an impurity concentration in the sixth region is higher than an impurity concentration in the third region.
6 . The device according to claim 4 , wherein each of the plurality of pixels further comprises a seventh region of the second conductivity type arranged between the second region and the fifth region.
7 . The device according to claim 6 , wherein when accumulating signal charges in the second region, at least a part of the seventh region has been depleted.
8 . The device according to claim 6 , wherein an impurity concentration in the seventh region is a concentration that does not form a potential barrier between the second region and the fifth region.
9 . The device according to claim 4 , wherein the plurality of pixels include a first pixel and a second pixel arranged so as to be adjacent to each other,
the device further includes an eighth region of the first conductivity type to which signal charges are transferred from the first region of the first pixel and the first region of the second pixel,
each of the first pixel and the second pixel further includes a ninth region of the second conductivity type arranged between the first region and the eighth region, and a second electrode arranged on the first main surface so as to cover the ninth region to transfer signal charges from the first region to the eighth region,
the fourth region of the first pixel and the fourth region of the second pixel are arranged continuously, and
between a portion of the sixth region of the first pixel and the second pixel arranged between the first pixel and the second pixel and the continuously arranged fourth region, a portion where the fifth region of the first pixel and the fifth region of the second pixel are continuous is included.
10 . The device according to claim 1 , wherein each of the plurality of pixels further comprises an eighth region of the first conductivity type to which signal charges are transferred from the first region, a ninth region of the second conductivity type arranged between the first region and the eighth region, and a second electrode arranged on the first main surface so as to cover the ninth region to transfer signal charges from the first region to the eighth region.
11 . The device according to claim 1 , wherein the plurality of pixels include a first pixel and a second pixel arranged so as to be adjacent to each other,
the device further includes an eighth region of the first conductivity type to which signal charges are transferred from the first region of the first pixel and the first region of the second pixel, and
each of the first pixel and the second pixel further includes a ninth region of the second conductivity type arranged between the first region and the eighth region, and a second electrode arranged on the first main surface so as to cover the ninth region to transfer signal charges from the first region to the eighth region.
12 . The device according to claim 1 , further including a tenth region of the second conductivity type surrounded by the first region and arranged between the first main surface and the third region while being spaced apart from the third region.
13 . The device according to claim 12 , wherein the tenth region is not covered with the first electrode.
14 . The device according to claim 12 , wherein a junction field effect transistor is formed in which the first region functions as a control electrode and the third region and the tenth region function as main electrodes when reading out signal charges in the first region, and
in accordance with an amount of the signal charges in the first region, an amplification signal by the junction field effect transistor is output to the tenth region.
15 . The device according to claim 1 , wherein the device is configured such that light enters from the second main surface.
16 . The device according to claim 1 , wherein in a section perpendicular to the first main surface and passing through the first region, the second region, the third region, and the first electrode, the first electrode is arranged so as to entirely overlap the first region.
17 . A photoelectric conversion device including a plurality of pixels arranged in a semiconductor layer comprising a first main surface and a second main surface on an opposite side of the first main surface,
wherein each of the plurality of pixels comprises:
a first photodiode including a first region of a first conductivity type where signal charges are accumulated;
a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region in an orthogonal projection with respect to the first main surface, and including a second region of the first conductivity type where signal charges are accumulated;
a third region of a second conductivity type opposite to the first conductivity type arranged between the first region and the second region;
a fourth region of the second conductivity type arranged between the second main surface and the second region;
a fifth region of the first conductivity type arranged between the fourth region and the second region, where an impurity concentration is lower than in the second region;
a sixth region of the second conductivity type arranged between the third region and the fourth region so as to surround the second region and the fifth region; and
a first electrode arranged on the first main surface so as to cover the first region, and
signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.
18 . A photoelectric conversion device including a plurality of pixels arranged in a semiconductor layer comprising a first main surface and a second main surface on an opposite side of the first main surface,
wherein each of the plurality of pixels comprises:
a first photodiode including a first region of a first conductivity type where signal charges are accumulated;
a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region in an orthogonal projection with respect to the first main surface, and including a second region of the first conductivity type where signal charges are accumulated;
a third region of a second conductivity type opposite to the first conductivity type arranged between the first region and the second region;
a first electrode arranged on the first main surface so as to cover the first region;
an eighth region of the first conductivity type to which signal charges are transferred from the first region;
a ninth region of the second conductivity type arranged between the first region and the eighth region; and
a second electrode arranged on the first main surface so as to cover the ninth region to transfer signal charges from the first region to the eighth region, and
signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.