IP Library Granted Patent US 12701813
Granted Patent B2
US 12701813 · App. 18/576,510 · Granted Aug 4, 2026

Semiconductor package

Inventor: Shun Mitarai (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H10F39/811H10F39/011H10F39/804H10F39/8057H10W74/124
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Quick Facts
Patent No.
US 12701813
App. No.
18/576,510
Granted
Aug 4, 2026
Kind
B2
Abstract

Provided is a semiconductor package further reduced in size. A semiconductor package, including a mounting substrate; a semiconductor chip having a smaller area than the mounting substrate and mounted on a main surface of the mounting substrate; a sealing glass facing the semiconductor chip and the mounting substrate, connected to the mounting substrate by a substrate connection part, and connected to the semiconductor chip by a chip connection part; and a connection wiring layer provided on a first surface of the sealing glass that faces the mounting substrate and the semiconductor chip, and electrically connected to the mounting substrate and the semiconductor chip via the substrate connection part and the chip connection part, wherein the mounting substrate, the semiconductor chip, and the sealing glass have approximately the same thermal expansion coefficient.

Claims (24)

1 . A semiconductor package, comprising:

a mounting substrate;

a semiconductor chip having a smaller area than the mounting substrate and mounted on a main surface of the mounting substrate;

a sealing glass facing the semiconductor chip and the mounting substrate, connected to the mounting substrate by a substrate connection part, and connected to the semiconductor chip by a chip connection part; and

a connection wiring layer provided on a first surface of the sealing glass that faces the mounting substrate and the semiconductor chip, and electrically connected to the mounting substrate and the semiconductor chip via the substrate connection part and the chip connection part,

wherein the mounting substrate, the semiconductor chip, and the sealing glass have approximately the same thermal expansion coefficient.

2 . The semiconductor package according to claim 1 , wherein the chip connection part is provided in an outer peripheral region of the semiconductor chip, and

the substrate connection part is provided in a region of the mounting substrate that surrounds the semiconductor chip.

3 . The semiconductor package according to claim 1 , wherein a level of the substrate connection part provided in the mounting substrate and a level of the chip connection part provided in the semiconductor chip are approximately the same.

4 . The semiconductor package according to claim 1 , wherein at least one or more of the substrate connection part and the chip connection part include a solder.

5 . The semiconductor package according to claim 1 , wherein the semiconductor chip includes an image sensor chip.

6 . The semiconductor package according to claim 5 , wherein the first surface of the sealing glass is provided with a metal film at a region not superimposed on a pixel region of the image sensor chip.

7 . The semiconductor package according to claim 6 , wherein the metal film is provided away from the connection wiring layer.

8 . The semiconductor package according to claim 5 , wherein a second surface of the sealing glass opposite to the first surface is provided with a light shielding film at a region not superimposed on a pixel region of the image sensor chip.

9 . The semiconductor package according to claim 1 , wherein the connection wiring layer is provided on the first surface of the sealing glass via a stress relief layer containing an organic resin.

10 . The semiconductor package according to claim 9 , wherein the stress relief layer has light-blocking effects.

11 . The semiconductor package according to claim 1 , further comprising:

a back wiring layer provided on a surface opposite to the main surface of the mounting substrate on which the semiconductor chip is mounted; and

a through via that is provided so as to penetrate the mounting substrate at the region provided with the substrate connection part, and electrically connects the back wiring layer and the substrate connection part.

12 . The semiconductor package according to claim 11 , further comprising a high-speed transmission via that is provided so as to penetrate the mounting substrate at the region in which the semiconductor chip is mounted, and directly electrically connects the back wiring layer and the semiconductor chip.

13 . The semiconductor package according to claim 1 , wherein the mounting substrate includes a glass core.

14 . The semiconductor package according to claim 1 , wherein the mounting substrate and the sealing glass are attached to each other by a sealing part provided in an outer peripheral region of the mounting substrate and the sealing glass, to seal the inside.

15 . The semiconductor package according to claim 14 , wherein the sealing part is provided so as to incorporate the substrate connection part.

16 . The semiconductor package according to claim 14 , wherein the sealing part includes a functional resin with light-blocking effects or air permeability.