Transfer device for semiconductor light emitting device and display device of semiconductor light emitting device using same
Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same. A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device. The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.
1 . A transfer device for semiconductor light emitting devices, the transfer device comprising:
a line beam laser generator; and
a through-type glass mask disposed on a semiconductor substrate comprising a predetermined semiconductor light emitting device,
wherein a line beam laser generated by the line beam laser generator passes through the through-type glass mask to selectively transfer the predetermined semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate,
wherein the through-type glass mask comprises a plurality of spaced apart through-type glass patterns in regions corresponding to the semiconductor light emitting devices, and
wherein a first width of a region of the through-type glass pattern into which the line beam laser is incident is greater than a second width of a region from which the line beam laser exits.
2 . The transfer device for semiconductor light emitting devices according to claim 1 , wherein the through-type glass mask comprises a light-blocking glass layer and a light reflecting metal layer disposed under the light-blocking glass layer, and
wherein a first through-type glass pattern is formed by penetrating the light-blocking glass layer and the light reflecting metal layer in a region corresponding to the predetermined semiconductor light emitting device.
3 . The transfer device for semiconductor light emitting devices according to claim 1 , wherein a size of the through-type glass mask is greater than a size of a first panel region onto which the predetermined semiconductor light emitting device is transferred.
4 . The transfer device for semiconductor light emitting devices according to claim 1 , wherein the through-type glass mask comprises an inclined through-type glass pattern.
5 . The transfer device for semiconductor light emitting devices according to claim 4 , wherein the through-type glass mask comprises a reflective layer disposed on an inclined surface of the inclined through-type glass pattern.
6 . The transfer device for semiconductor light emitting devices according to claim 5 , wherein the reflective layer is disposed on a first inclined surface where the where a light-blocking glass layer is etched.
7 . The transfer device for semiconductor light emitting devices according to claim 6 , wherein the reflective layer is also disposed on the first inclined surface where the light-blocking glass layer is etched and a first inclined surface where a light reflecting metal layer is etched.
8 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein a width of a lower surface of the light reflecting metal layer is greater than a width of a lower surface of the light-blocking glass layer.
9 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein a width of a lower surface of the light-blocking glass layer is equal to a width of an upper surface of the light reflecting metal layer.
10 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein an angle of an inclined surface of the light-blocking glass layer is the same as that of an inclined surface of the light reflecting metal layer.
11 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein the light-blocking glass layer is selected from the group consisting of borosilicate glass, germanium glass, acrylic glass, UV grade fused silica glass, and semiconductor grade fused quartz.
12 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein the light reflecting metal layer comprises a material selected from the group consisting of Al, Ag, Ni, Ti, and alloys thereof.
13 . The transfer device for semiconductor light emitting devices according to claim 2 , wherein the light reflecting metal layer comprises a metal reflective layer and a dielectric layer.
14 . The transfer device for semiconductor light emitting devices according to claim 5 , wherein the reflective layer disposed on the inclined surface comprises a material selected from the group consisting of Al, Ag, Ni, Ti, alloys thereof, and a dielectric material.
15 . The transfer device for semiconductor light emitting devices according to claim 5 , wherein the reflective layer is formed on at least part of the inclined surface of the inclined through-type glass pattern.
16 . The transfer device for semiconductor light emitting devices according to claim 1 , wherein the predetermined semiconductor light emitting device comprises a micro-LED or a mini-LED.