Method of manufacturing semiconductor light-emitting element
A method of manufacturing a semiconductor light-emitting element includes: forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer; treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N 2 gas and an NH 3 gas; and forming a n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma.
1 . A method of manufacturing a semiconductor light-emitting element, comprising:
forming an active layer of an AlGaN-based semiconductor material on an n-type semiconductor layer of an n-type AlGaN-based semiconductor material;
forming a p-type semiconductor layer on the active layer;
removing a portion of the p-type semiconductor layer and the active layer by dry etching to expose an upper surface of the n-type semiconductor layer;
treating the upper surface of the n-type semiconductor layer with a plasma in an atmosphere including an N 2 gas and an NH 3 gas; and
forming an n-side contact electrode on the upper surface of the n-type semiconductor layer treated with the plasma,
wherein substantially only the N 2 gas and the NH 3 gas are included in the atmosphere of the plasma treating, and
wherein a volume ratio of the NH 3 gas in the atmosphere in the treating with a plasma is equal to or more than 4.6% and equal to or less than 18.8%.
2 . The method of manufacturing a semiconductor light-emitting element according to claim 1 , wherein
a treatment time in the treating with a plasma is equal to or more than 10 seconds and equal to or less than 90 seconds.