Light emitting element and method of fabricating light emitting element
Provided herein is a light emitting element and a method of fabricating the light emitting element. The light emitting element includes a first semiconductor layer, a first insulating film disposed on the first semiconductor layer, the first insulating film including a nano-pattern, an active layer disposed in the nano-pattern of the first insulating film, and a second semiconductor layer disposed on the active layer in the nano-pattern of the first insulating film.
1 . A light emitting element comprising:
a first semiconductor layer;
a first insulating film disposed on the first semiconductor layer, the first insulating film including a nano-pattern;
an active layer disposed in the nano-pattern of the first insulating film;
a second semiconductor layer disposed on the active layer in the nano-pattern of the first insulating film; and
an electrode layer disposed on the second semiconductor layer, and covering an entirety of an exposed surface of the second semiconductor layer and an entirety of an exposed side of the first insulating film adjacent to the exposed surface of the second semiconductor layer.
2 . A light emitting element comprising:
a first semiconductor layer;
a first insulating film disposed on the first semiconductor layer, the first insulating film including a nano-pattern;
an active layer disposed in the nano-pattern of the first insulating film; and
a second semiconductor layer disposed on the active layer in the nano-pattern of the first insulating film,
wherein a diameter of the nano-pattern of the first insulating film is less than a diameter of the first semiconductor layer.
3 . The light emitting element according to claim 1 , wherein the nano-pattern of the first insulating film exposes the first semiconductor layer.
4 . The light emitting element according to claim 1 , wherein the first insulating film covers the active layer and the second semiconductor layer.
5 . The light emitting element according to claim 1 , wherein the active layer is disposed between the first semiconductor layer and the second semiconductor layer.
6 . The light emitting element according to claim 1 , further comprising:
a second insulating film disposed on the first insulating film.
7 . The light emitting element according to claim 6 , wherein the second insulating film covers the first semiconductor layer that is exposed from the first insulating film.
8 . The light emitting element according to claim 1 , wherein the active layer emits red light.
9 . The light emitting element according to claim 1 , further comprising:
a superlattice layer disposed in the nano-pattern of the first insulating film.
10 . A method of fabricating a light emitting element, comprising:
forming a first semiconductor layer on a stack substrate;
forming a first insulating film on the first semiconductor layer;
forming nano-patterns by etching the first insulating film;
forming an active layer and a second semiconductor layer in the nano-patterns of the first insulating film;
forming an electrode layer on a surface of the second semiconductor layer to cover an entirety of the surface of the second semiconductor layer and a side of the first insulating film adjacent to the surface of the second semiconductor layer; and
partially etching the electrode layer, the first insulating film, and the first semiconductor layer so that the electrode layer covers an entirety of the surface of the second semiconductor layer and an entirety of a remaining portion of the side of the first insulating film adjacent to the surface of the second semiconductor layer after the etching, and forming light emitting patterns.
11 . The method according to claim 10 , wherein, in the partially etching of the first insulating film and the first semiconductor layer, the active layer and the second semiconductor layer are protected by the first insulating film.
12 . The method according to claim 10 , wherein the nano-patterns of the first insulating film pass through the first insulating film and expose a top surface of the first semiconductor layer.
13 . The method according to claim 10 , further comprising:
forming a mask on the electrode layer.
14 . The method according to claim 13 , wherein the mask overlaps the nano-patterns of the first insulating film in a plan view.
15 . The method according to claim 14 , wherein the forming of the light emitting patterns comprises etching the electrode layer, the first insulating film, and the first semiconductor layer that are exposed from the mask.
16 . The method according to claim 10 , further comprising:
forming a second insulating film on the light emitting patterns.
17 . The method according to claim 16 , wherein the second insulating film covers the first insulating film and the first semiconductor layer.
18 . The method according to claim 10 , further comprising:
separating the light emitting patterns from the stack substrate.