Curved semiconductor chip and method for forming the same
The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side; a device layer, disposed on the first side of the substrate; an interconnect layer, disposed on the device layer; a luminous layer, disposed on the interconnect layer; and a capping layer, conformally disposed on the second side of the bended substrate. The semiconductor device is convexly curved.
1 . A semiconductor device, comprising:
a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side;
a device layer, disposed on the first side of the substrate;
an interconnect layer, disposed on the device layer;
a luminous layer, disposed on the interconnect layer; and
a capping layer, conformally disposed on the second side of the substrate,
wherein the semiconductor device is convexly curved, wherein the capping layer includes a plurality of openings disposed within the plurality of trenches correspondingly, and a first thickness of the capping layer within one of the plurality of trenches is substantially different from a second thickness of the capping layer within another one of the plurality of trenches.
2 . The semiconductor device of claim 1 , wherein the luminous layer and the substrate have same curvature.
3 . The semiconductor device of claim 1 , wherein each of the plurality of trenches has a depth between about 5 nanometers (nm) and about 50 micrometers (μm).
4 . The semiconductor device of claim 1 , wherein each of the plurality of trenches has a width between about 5 nm and about 50 μm.
5 . The semiconductor device of claim 1 , wherein the luminous layer includes a plurality of optical devices.
6 . The semiconductor device of claim 1 , wherein the substrate is outwardly curved from the first side towards the second side.
7 . The semiconductor device of claim 1 , wherein the first side and the second side have same curvature.
8 . The semiconductor device of claim 1 , wherein a length of the first side is substantially less than a length of the second side.
9 . A semiconductor device, comprising:
a substrate, having a first surface and a second surface opposite to the first surface, wherein the substrate includes a first trench and a second trench at the second surface;
a transistor layer, conformally covering the first surface of the substrate;
an interconnect layer, conformally covering the transistor layer;
an optical device layer, conformally covering the interconnect layer; and
a capping layer, conformally covering the second surface of the substrate, wherein a first thickness of the capping layer within the first trench is substantially different from a second thickness of the capping layer within the second trench.
10 . The semiconductor device of claim 9 , wherein a total thickness of the transistor layer and the substrate is between about 10 μm and about 1000 μm.
11 . The semiconductor device of claim 9 , wherein the capping layer has a thickness between about 5 angstroms (Å) and about 100 nm.
12 . The semiconductor device of claim 9 , wherein the substrate, the transistor layer, the interconnect layer, the optical device layer and the capping layer have same curvature.
13 . The semiconductor device of claim 9 , wherein the substrate includes a plurality of protrusions disposed at the second surface.
14 . The semiconductor device of claim 13 , wherein the capping layer on one of the plurality of protrusions has an inconsistent thickness.
15 . A semiconductor device, comprising:
a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of protrusions at the second side;
a device layer, disposed on the first side of the substrate;
an interconnect layer, disposed on the device layer;
a luminous layer, disposed on the interconnect layer; and
a capping layer, conformally covering the plurality of protrusions and including a plurality of openings alternately disposed with the plurality of protrusions, wherein the capping layer has a first portion connected with a second portion, and a thickness of the second portion is greater than a thickness of the first portion, wherein the first portion of the capping layer surrounds a first opening, and the second portion of the capping layer surrounds a second opening.
16 . The semiconductor device of claim 15 , wherein the substrate is bended.
17 . The semiconductor device of claim 15 , wherein the luminous layer and the substrate have same curvature.
18 . The semiconductor device of claim 15 , wherein the substrate, the device layer, the interconnect layer, and the luminous layer have same curvature.
19 . The semiconductor device of claim 15 , wherein the first opening and the second opening are separated by one of the plurality of protrusions.
20 . The semiconductor device of claim 15 , wherein the first opening and the second opening have different volumes.