Inorganic light emitting diode including conductive members, display module and manufacturing method thereof
Provided is an inorganic light emitting device including a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode covered to the first semiconductor layer, a second electrode covered to the second semiconductor layer, an insulating layer covered the first electrode and the second electrode, and including via holes at positions corresponding to the first electrode and the second electrode, and a first conductive member and a second conductive member coupled to the first electrode and the second electrode, respectively, through the via holes, wherein a distance between the first conductive member and the second conductive member is greater than a distance between the first electrode and the second electrode.
1 . An inorganic light emitting device, comprising:
a first semiconductor layer;
a second semiconductor layer;
an active layer disposed between the first semiconductor layer and the second semiconductor layer;
a first electrode coupled to the first semiconductor layer;
a second electrode coupled to the second semiconductor layer;
an insulating layer covered the first electrode and the second electrode, and comprising via holes at positions corresponding to the first electrode and the second electrode; and
a first conductive member and a second conductive member coupled to the first electrode and the second electrode, respectively, through the via holes,
wherein a distance between the first conductive member and the second conductive member is greater than a distance between the first electrode and the second electrode,
wherein the second electrode penetrates the first semiconductor layer and the active layer and directly contacts the second semiconductor layer, the active layer, and the first semiconductor layer,
wherein the second electrode contacts an upper surface and a side surface of the first semiconductor layer, a side surface of the active layer, and an upper surface of the second semiconductor layer,
wherein the second electrode entirely surrounds the first electrode,
wherein the insulating layer is configured to cover an opposite surface of a light emitting surface and the first and second electrodes, and
wherein the insulating layer functions as an adhesive layer.
2 . The inorganic light emitting device of claim 1 , wherein a width of the first conductive member is narrower than a width of the first electrode.
3 . The inorganic light emitting device of claim 1 , wherein a width of the second conductive member is narrower than a width of the second electrode.
4 . The inorganic light emitting device of claim 1 , wherein the first conductive member and the second conductive member comprises PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)).
5 . The inorganic light emitting device of claim 1 , wherein the insulating layer comprises benzo cyclo butene (BCB), polyimide or epoxy.
6 . A display device comprising:
a substrate comprising a thin film transistor (TFT) layer that comprises a TFT circuit and a plurality of electrode pads on the TFT layer;
a plurality of inorganic light emitting devices respectively comprising a first electrode and a second electrode connected with the plurality of electrode pads, a first semiconductor layer coupled to the first electrode, and a second semiconductor layer coupled to the second electrode;
an active layer disposed between the first semiconductor layer and the second semiconductor layer;
an insulating layer between the substrate and the plurality of inorganic light emitting devices; and
a first conductive member and a second conductive member configured to electrically connect the first electrode and the second electrode with the plurality of electrode pads,
wherein a distance between the first conductive member and the second conductive member is greater than a distance between the first electrode and the second electrode,
wherein the second electrode penetrates the first semiconductor layer and the active layer and directly contacts the second semiconductor layer, the active layer, and the first semiconductor layer,
wherein the second electrode contacts an upper surface and a side surface of the first semiconductor layer, a side surface of the active layer, and an upper surface of the second semiconductor layer,
wherein the second electrode entirely surrounds the first electrode,
wherein the insulating layer is configured to cover an opposite surface of a light emitting surface and the first and second electrodes, and
wherein the insulating layer functions as an adhesive layer.
7 . The display device of claim 6 , wherein the first conductive member is between the first electrode and a corresponding electrode pad among the plurality of electrode pads, and
wherein the second conductive member is between the second electrode and another corresponding electrode pad among the plurality of electrode pads.
8 . The display device of claim 7 , wherein a width of the first conductive member is narrower than a width of the first electrode.
9 . The display device of claim 7 , wherein a width of the second conductive member is narrower than a width of the second electrode.
10 . The display device of claim 6 , wherein the insulating layer comprises vias formed at positions corresponding to the first electrode and the second electrode, and
wherein the first conductive member and the second conductive member are disposed in the vias.
11 . The display device of claim 6 , wherein the plurality of inorganic light emitting devices respectively comprises the insulating layer and the first conductive member and the second conductive member.
12 . A display device comprising:
a substrate comprising a thin film transistor (TFT) layer that comprises a first electrode pad and a second electrode pad;
an inorganic light emitting device comprising a first electrode and a second electrode electrically connected to the first electrode pad and the second electrode pad, respectively, a first semiconductor layer coupled to the first electrode, and a second semiconductor layer coupled to the second electrode;
an active layer disposed between the first semiconductor layer and the second semiconductor layer;
an insulating layer between the substrate and the inorganic light emitting device; and
a first conductive member between the first electrode and the first electrode pad, and a second conductive member between the second electrode and the second electrode pad,
wherein a distance between the first conductive member and the second conductive member is greater than a distance between the first electrode and the second electrode,
wherein the second electrode penetrates the first semiconductor layer and the active layer and directly contacts the second semiconductor layer, the active layer, and the first semiconductor layer,
wherein the second electrode contacts an upper surface and a side surface of the first semiconductor layer, a side surface of the active layer, and an upper surface of the second semiconductor layer,
wherein the second electrode entirely surrounds the first electrode,
wherein the insulating layer is configured to cover an opposite surface of a light emitting surface and the first and second electrodes, and
wherein the insulating layer functions as an adhesive layer.
13 . The display device of claim 12 , wherein a width of the first conductive member is narrower than a width of the first electrode.
14 . The display device of claim 12 , wherein a width of the second conductive member is narrower than a width of the second electrode.