IP Library Granted Patent US 12701833
Granted Patent B2
US 12701833 · App. 18/454,066 · Granted Aug 4, 2026

Planar light-emitting device

Inventors: Takeshi Tamura (Tokushima, JP); Yuichi Hirao (Tokushima, JP)
Assignee: NICHIA CORPORATION
H10H20/8515F21V9/30H10H20/8513H10H20/8514H10H29/142H10W90/00F21Y2105/16F21Y2113/13H10H20/855
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Quick Facts
Patent No.
US 12701833
App. No.
18/454,066
Granted
Aug 4, 2026
Kind
B2
Abstract

A planar light-emitting device includes a plurality of light-emitting elements arranged at same intervals in a planar configuration, and a wavelength conversion member located above the plurality of light-emitting elements. The plurality of light-emitting elements is configured to emit blue light. The wavelength conversion member contains a phosphor that emits light when being excited by light emitted from the light-emitting elements. The plurality of light-emitting elements includes a first light-emitting element located in an outer perimeter region in a plan view, and a second light-emitting element located in a central region in the plan view. The central region is positioned inward of the outer perimeter region in the plan view. A peak wavelength of light emitted from the first light-emitting element is less than a peak wavelength of light emitted from the second light-emitting element.

Claims (58)

1 . A planar light-emitting device, comprising:

a plurality of light-emitting elements arranged at same intervals in a planar configuration, the plurality of light-emitting elements configured to emit blue light; and

a wavelength conversion member located above the plurality of light-emitting elements, the wavelength conversion member containing a phosphor that emits light when being excited by light emitted from the plurality of light-emitting elements,

the plurality of light-emitting elements including

a first light-emitting element located in an outer perimeter region in a plan view, and

a second light-emitting element located in a central region in the plan view, the central region being positioned inward of the outer perimeter region in the plan view,

a peak wavelength of light emitted from the first light-emitting element being less than a peak wavelength of light emitted from the second light-emitting element, wherein

the plurality of light-emitting elements further includes a third light-emitting element located in an intermediate region positioned between the outer perimeter region and the central region in the plan view,

a peak wavelength of light emitted from the third light-emitting element is greater than the peak wavelength of the light emitted from the first light-emitting element and less than the peak wavelength of the light emitted from the second light-emitting element,

the plurality of light-emitting elements is arranged in a rectangular configuration in the plan view,

the outer perimeter region includes:

a first part including a corner of the rectangular configuration; and

a second part next to the first part,

the intermediate region includes a third part next to the first part,

a first-first light-emitting element and a second-first light-emitting element are located in the first part and the second part, respectively, and

the third light-emitting element is located in the third part, and

another second light-emitting element is located in the intermediate region.

2 . The device according to claim 1 , wherein

the plurality of light-emitting elements further includes an intervening light-emitting element located in the outer perimeter region in the plan view,

the intervening light-emitting element is positioned between adjacent ones of a plurality of the first light-emitting elements, and

a peak wavelength of light emitted from the intervening light-emitting element is equal to the peak wavelength of the light emitted from the second light-emitting element or less than the peak wavelength of the light emitted from the second light-emitting element.

3 . The device according to claim 1 , further comprising:

a substrate at which the plurality of light-emitting elements is disposed; and

a light-transmitting member covering at least one of the plurality of light-emitting elements on the substrate.

4 . The device according to claim 1 , further comprising:

a substrate at which the plurality of light-emitting elements is disposed; and

a demarcation member defining a plurality of regions each surrounding a respective one of the plurality of light-emitting elements on the substrate, the demarcation member being light-reflective.

5 . The device according to claim 1 , wherein

the wavelength conversion member is plate-shaped, and

the wavelength conversion member and the plurality of light-emitting elements are separated from each other.

6 . The device according to claim 1 , wherein

the phosphor contains:

at least one selected from a group consisting of β-sialon, chlorosilicate, silicate, BSON, perovskite, and thiogallate; and

at least one selected from a group consisting of KSF, KSAF, MGF, SCASN, CASN, and β-sialon.

7 . The device according to claim 1 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

8 . The device according to claim 7 , wherein

a difference between the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element is not less than 1 nm and not more than 10 nm.

9 . The device according to claim 2 , wherein

the phosphor contains:

at least one selected from a group consisting of β-sialon, chlorosilicate, silicate, BSON, perovskite, and thiogallate; and

at least one selected from a group consisting of KSF, KSAF, MGF, SCASN, CASN, and β-sialon.

10 . The device according to claim 4 , wherein

the phosphor contains:

at least one selected from a group consisting of β-sialon, chlorosilicate, silicate, BSON, perovskite, and thiogallate; and

at least one selected from a group consisting of KSF, KSAF, MGF, SCASN, CASN, and β-sialon.

11 . The device according to claim 2 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

12 . The device according to claim 4 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

13 . The device according to claim 6 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

14 . The device according to claim 9 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

15 . The device according to claim 10 , wherein

the peak wavelength of the light emitted from the first light-emitting element and the peak wavelength of the light emitted from the second light-emitting element are not less than 430 nm and not more than 460 nm.

16 . The device according to claim 1 , wherein

the third light-emitting element is located between the another second light-emitting element and a further second light-emitting element in the intermediate region.