Semiconductor light-emitting device and preparation method thereof

1 . A semiconductor light-emitting device, having a red light sub-pixel region, a green light sub-pixel region and a blue-light sub-pixel region, comprising:

a substrate and an epitaxial layer epitaxially grown on the substrate, the epitaxial layer comprising a blue light epitaxial layer epitaxially grown on the substrate, and a green light epitaxial layer and a red light epitaxial layer continually grown in the green light sub-pixel region and the red light sub-pixel region, respectively, the green light sub-pixel region and the red light sub-pixel region being located on the blue light epitaxial layer, and the green light epitaxial layer and the red light epitaxial layer being distributed on the blue light epitaxial layer at an interval; and

P-type contact electrodes and N-type contact electrodes electrically connected to the blue light epitaxial layer, the green light epitaxial layer and the red light epitaxial layer,

wherein the green light epitaxial layer and the red light epitaxial layer are both electroluminescent and photoluminescent.

2 . The semiconductor light-emitting device according to claim 1 , wherein

the blue light epitaxial layer comprises a first N-type GaN-doped layer, a blue light light-emitting layer and a first P-type GaN-doped layer grown in sequence; the green light epitaxial layer comprises a second N-type GaN-doped layer, a green light light-emitting layer and a second P-type GaN-doped layer grown in sequence; and the red light epitaxial layer comprises a second N-type GaN-doped layer, a red light light-emitting layer and a second P-type GaN-doped layer grown in sequence; and

the P-type contact electrodes are electrically connected to the first P-type GaN-doped layer, the second P-type GaN-doped layer in the red light epitaxial layer and the second P-type GaN-doped layer in the green light epitaxial layer, respectively, and the N-type contact electrodes are electrically connected to the first N-type GaN-doped layer, the second N-type GaN doped layer in the red light epitaxial layer and the second N-type GaN-doped layer in the green light epitaxial layer, respectively.

3 . The semiconductor light-emitting device according to claim 2 , wherein the blue light light-emitting layer is a GaN layer doped with indium element, the green light light-emitting layer is a GaN layer doped with indium element, the red light light-emitting layer is a GaN layer doped with indium element, a proportion of indium doped in the red light light-emitting layer is greater than a proportion of indium doped in the green light light-emitting layer, and the proportion of indium doped in the green light light-emitting layer is greater than a proportion of indium doped in the blue light light-emitting layer.

4 . The semiconductor light-emitting device according to claim 2 , further comprising:

a blue light DBR Distributed Bragg Reflection (DBR) reflective layer formed between the first N-type GaN-doped layer and the substrate, wherein the blue light DBR reflective layer is adjacent to the first N-type GaN-doped layer.

5 . The semiconductor light-emitting device according to claim 1 , further comprising:

an insulating dielectric mask layer, wherein the insulating dielectric mask layer is disposed on the blue light epitaxial layer, the insulating dielectric mask layer has through holes, and the green light epitaxial layer and the red light epitaxial layer are distributed in the through holes of the insulating dielectric mask layer at an interval.

6 . The semiconductor light-emitting device according to claim 1 , further comprising:

light shielding structures, wherein the light shielding structures are disposed on both sides of the red light sub-pixel region and the green light sub-pixel region.

7 . The semiconductor light-emitting device according to claim 1 , further comprising:

a common electrode layer, wherein the common electrode layer is formed above the blue light epitaxial layer, the green light epitaxial layer and the red light epitaxial layer are continually grown in the green light sub-pixel region and the red light sub-pixel region, respectively, on the common electrode layer, and the green light epitaxial layer and the red light epitaxial layer are distributed on the common electrode layer at an interval.

8 . The semiconductor light-emitting device according to claim 7 , wherein the blue light epitaxial layer comprises a first N-type GaN-doped layer, a blue light light-emitting layer and a first P-type GaN-doped layer grown in sequence; the green light epitaxial layer comprises a green light light-emitting layer and a second P-type GaN-doped layer which are grown in sequence; and the red light epitaxial layer comprises a red light light-emitting layer and a second P-type GaN-doped layer grown in sequence; and

the P-type contact electrodes are electrically connected to the first P-type GaN-doped layer, the second P-type GaN-doped layer in the red light epitaxial layer and the second P-type GaN-doped layer in the green light epitaxial layer, respectively, and the N-type contact electrodes are electrically connected to the first N-type GaN-doped layer and the common electrode layer, respectively.

9 . The semiconductor light-emitting device according to claim 1 , wherein an entire surface of the blue light epitaxial layer is electroluminescent.

10 . The semiconductor light-emitting device according to claim 1 , further comprising:

an isolation trench separating a blue light epitaxial layer of the blue light sub-pixel region and a blue light epitaxial layer of the red light sub-pixel region and the green light sub-pixel region from each other.

11 . The semiconductor light-emitting device according to claim 1 , wherein an area of the red light sub-pixel region and an area of the green light sub-pixel region are different.

12 . The semiconductor light-emitting device according to claim 1 , wherein an area of the red light sub-pixel region is greater than an area of the green light sub-pixel region.

13 . The semiconductor light-emitting device according to claim 7 , wherein the substrate, the blue light epitaxial layer, the common electrode layer, and the layer where the green light epitaxial layer and the red light epitaxial layer are located are arranged in a stepped manner,

the common electrode layer has an area that is not covered by the green light epitaxial layer or the red light epitaxial layer, the blue light epitaxial layer has an area that is not covered by the common electrode layer, and the substrate has an area that is not covered by the blue light epitaxial layer, and

the P-type contact electrodes and the N-type contact electrodes are located in a stepped region.

14 . The semiconductor light-emitting device according to claim 13 , wherein the P-type contact electrodes are respectively formed on a first P-type GaN-doped layer of the blue light epitaxial layer, a second P-type GaN-doped layer of the red light epitaxial layer and a second P-type GaN-doped layer of the green light epitaxial layer; and the N-type contact electrodes are formed on a first N-type GaN-doped layer and the common electrode layer.

15 . The semiconductor light-emitting device according to claim 7 , further comprising:

an insulating dielectric mask layer, wherein the insulating dielectric mask layer is disposed on the blue light epitaxial layer, the insulating dielectric mask layer has through holes, and the green light epitaxial layer and the red light epitaxial layer are distributed in the through holes of the insulating dielectric mask layer at an interval,

wherein the common electrode layer has an entire-surface structure, and is formed between the blue light epitaxial layer and the insulating dielectric mask layer,

wherein the common electrode layer is exposed by the through holes of the insulating dielectric mask layer, the second N-type GaN-doped layer, the light-emitting layer and the second P-type GaN-doped layer are continually grown on the common electrode layer exposed by the through holes, and

wherein the through holes include a first through hole and a second through hole, wherein the green light epitaxial layer is formed in the first through hole, and the red light epitaxial layer is formed in the second through hole.