Display panel arranged with heavily doped semiconductor connection line display and method of preparing the same

1 . A display panel, comprising:

a substrate, comprising an effective display region and a non-display region adjacent to the effective display region, wherein the substrate comprises a silicon-containing compound material;

a display unit, configured to display an image and arranged in the effective display region, which is located on a side of the substrate;

a binding unit, arranged in the non-display region, which is located on a side of the substrate, and comprising a binding portion and a plurality of signal connection lines, wherein two ends of each of the plurality of signal connection lines are connected to the display unit and the binding portion, respectively;

an encapsulation layer, wrapping the display unit and a part of the plurality of signal connection lines, and configured to encapsulate the display unit and the plurality of signal connection lines, wherein the encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer, which are laminated successively in a direction away from the substrate; the first encapsulation layer and the third encapsulation layer comprise the silicon-containing compound material, and the second encapsulation layer comprises an organic material;

wherein the encapsulation layer covers a portion of each of the plurality of signal connection lines, at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as a heavily doped semiconductor connection line, and the first encapsulation layer wraps around the heavily doped semiconductor connection line;

wherein the portion of each of the plurality of signal connection lines covered by the encapsulation layer comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line; and lattice of the heavily doped semiconductor connection line is matched with lattice of the first encapsulation layer; the heavily doped semiconductor connection line comprises a heavily doped semiconductor layer and an inorganic oxide layer wrapping around a surface of the heavily doped semiconductor layer; an inorganic oxide substance of the inorganic oxide layer is formed by a semiconductor material of the heavily doped semiconductor layer being oxidized; the first encapsulation layer directly covers the inorganic oxide layer; lattice of the inorganic oxide layer, lattice of the heavily doped semiconductor layer, and the lattice of the first encapsulation layer match each other.

2 . The display panel according to claim 1 , wherein at least one connection line of the plurality of signal connection lines comprises a first metal line, the heavily doped semiconductor connection line and a second metal line, which are connected in sequence;

the first metal line is connected to the binding portion, and the second metal line is connected to the display unit, forming the signal connection line; and

a sum of a length of the first metal line and a length of the second metal line is greater than a length of the heavily doped semiconductor connection line.

3 . The display panel according to claim 1 , wherein the heavily doped semiconductor connection line comprises an N-type heavily doped semiconductor material or a P-type heavily doped semiconductor material; and

each of a doping concentration of the N-type heavily doped semiconductor material and a doping concentration of the P-type heavily doped semiconductor material is greater than or equal to 10 19 cm −3 .

4 . The display panel according to claim 1 , wherein

the inorganic oxide layer is wrapped by the first encapsulation layer.

5 . A method of preparing a display panel, comprising:

providing a substrate, wherein the substrate comprises an effective display region and a non-display region adjacent to the effective display region, and the substrate comprises a silicon-containing compound material;

arranging a display unit and a binding portion on the substrate, wherein the display unit is formed in the effective display region on a side of the substrate, and the binding portion is formed in the non-display region on a side of the display unit;

arranging a plurality of signal connection lines in the non-display region between the effective display region and the binding portion, and electrically connecting two ends of each of the plurality of signal connection lines to a drive circuit layer and the binding portion, respectively, wherein at least a part of each of the plurality of signal connection lines is configured as a heavily doped semiconductor connection line;

arranging an encapsulation layer; successively arranging a first encapsulation layer, a second encapsulation layer, a third encapsulation layer, which are laminated, in a direction away from the substrate,

wherein the first encapsulation layer and the third encapsulation layer comprise a silicon-containing compound material, and the second encapsulation layer comprises an organic material;

the first encapsulation layer is arranged to wrap around the display unit and a portion of each of the plurality of signal connection lines;

at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as the heavily doped semiconductor connection line, and the first encapsulation layer wraps around the heavily doped semiconductor connection line; and

the portion of each of the plurality of signal connection lines covered by the encapsulation layer comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line; and lattice of the heavily doped semiconductor connection line is matched with lattice of the first encapsulation layer;

wherein the arranging a plurality of signal connection lines in the non-display region between the effective display region and the binding portion, and electrically connecting two ends of each of the plurality of signal connection lines to a drive circuit layer and the binding portion, respectively, comprises:

forming the heavily doped semiconductor connection line by performing chemical vapor deposition or ion injection;

exposing the heavily doped semiconductor connection line to the air to form an inorganic oxide layer on a surface of the heavily doped semiconductor connection line;

wherein, the inorganic oxide layer wraps around the surface of the heavily doped semiconductor layer; the first encapsulation layer directly covers the inorganic oxide layer; lattice of the inorganic oxide layer, lattice of the heavily doped semiconductor layer, and the lattice of the first encapsulation layer match each other.

6 . The method according to claim 5 ,

wherein the heavily doped semiconductor connection line comprises an N-type heavily doped semiconductor material or a P-type heavily doped semiconductor material; and

each of a doping concentration of the N-type heavily doped semiconductor material and a doping concentration of the P-type heavily doped semiconductor material is greater than or equal to 10 19 cm −3 .

7 . The method according to claim 5 , wherein the arranging a plurality of signal connection lines in the non-display region between the effective display region and the binding portion, and electrically connecting two ends of each of the plurality of signal connection lines to a drive circuit layer and the binding portion, respectively, comprises:

arranging a metal connection line between the effective display region and the binding portion, connecting an end of the metal connection line to an end of the heavily doped semiconductor connection line to form at least a portion of the signal connection line; and/or

arranging the first metal line and a second metal line between the effective display region and the binding portion; successively connecting the first metal line, the heavily doped semiconductor connection line and the second metal connecting line to form at least a portion of the signal connection line, wherein a sum of a length of the first metal line and a length of the second metal line is greater than a length of the heavily doped semiconductor connection line.

8 . A display device, comprising:

a display panel, configured to display images; and

a control board, bound to a binding portion and configured to control, through the binding portion, the display panel to display images,

wherein the display panel comprises:

a substrate, comprising an effective display region and a non-display region adjacent to the effective display region, wherein the substrate comprises a silicon-containing compound material;

a display unit, configured to display an image and arranged in the effective display region, which is located on a side of the substrate;

a binding unit, arranged in the non-display region, which is located on a side of the substrate, and comprising a binding portion and a plurality of signal connection lines, wherein two ends of each of the plurality of signal connection lines are connected to the display unit and the binding portion, respectively;

an encapsulation layer, wrapping the display unit and a part of the plurality of signal connection lines, and configured to encapsulate the display unit and the plurality of signal connection lines, wherein the encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer, which are laminated successively in a direction away from the substrate; the first encapsulation layer and the third encapsulation layer comprise the silicon-containing compound material, and the second encapsulation layer comprises an organic material;

wherein the encapsulation layer covers a portion of each of the plurality of signal connection lines, at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as a heavily doped semiconductor connection line, and the first encapsulation layer wraps around the heavily doped semiconductor connection line;

the portion of each of the plurality of signal connection lines covered by the encapsulation layer comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line; and lattice of the heavily doped semiconductor connection line is matched with lattice of the first encapsulation layer;

the heavily doped semiconductor connection line comprises a heavily doped semiconductor layer and an inorganic oxide layer wrapping around a surface of the heavily doped semiconductor layer; an inorganic oxide substance of the inorganic oxide layer is formed by a semiconductor material of the heavily doped semiconductor layer being oxidized; the first encapsulation layer directly covers the inorganic oxide layer; lattice of the inorganic oxide layer, lattice of the heavily doped semiconductor layer, and the lattice of the first encapsulation layer match each other.

9 . The display device according to claim 8 , wherein at least one connection line of the plurality of signal connection lines comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line.

10 . The display device according to claim 8 , wherein at least one connection line of the plurality of signal connection lines comprises a first metal line, the heavily doped semiconductor connection line and a second metal line, which are connected in sequence;

the first metal line is connected to the binding portion, and the second metal line is connected to the display unit, forming the signal connection line; and

a sum of a length of the first metal line and a length of the second metal line is greater than a length of the heavily doped semiconductor connection line.

11 . The display device according to claim 8 , wherein the heavily doped semiconductor connection line comprises an N-type heavily doped semiconductor material or a P-type heavily doped semiconductor material; and

each of a doping concentration of the N-type heavily doped semiconductor material and a doping concentration of the P-type heavily doped semiconductor material is greater than or equal to 10 19 cm −3 .

12 . The display device according to claim 8 , wherein

the inorganic oxide layer is wrapped by the first encapsulation layer.