PCM device
In various embodiments, an improved structure for a PCM device is provided. The improved structure is configured to help prevent heat dissipation. In one example, the PCM device is an PCM RF Switch, which has a substrate, a heater, a dielectric/insulator layer, oxidation layers, electrodes, a PCM region, and/or any other components. The oxidation layers are configured to help prevent heat dissipation from the heater.
1 . A phase change material (PCM) radio frequency (RF) switch comprising:
a substrate;
a heater element formed above the substrate;
a dielectric layer formed on the heater element;
oxidation layers formed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the oxidation layers are co-planar with an upper surface of the dielectric layer;
a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element;
spacers formed on the oxidation layers and along sidewalls of the PCM region; and
electrodes formed around the PCM region and over the spacers.
2 . The PCM RF switch of claim 1 , wherein the oxidation layers have a lower thermal conductivity than a thermal conductivity of the dielectric layer.
3 . The PCM RF switch of claim 1 , wherein the oxidation layers comprise a first oxidation layer arranged on a right side of the heater element and a second oxidation layer arranged on a left side of the heater element.
4 . The PCM RF switch of claim 1 , wherein the oxidation layers comprise a Silicon Oxide based material.
5 . The PCM RF switch of claim 1 , wherein the oxidation layers have a thickness equal to a combination of a thickness of the heater element and a thickness of the dielectric layer.
6 . The PCM RF switch of claim 1 , further comprising an insulation layer formed between the heater element and the substrate.
7 . The PCM RF switch of claim 6 , wherein the insulation layer has a lower thermal conductivity than that of the substrate.
8 . The PCM RF switch of claim 1 , wherein the dielectric layer has a tapered shape tapering towards the PCM region.
9 . The PCM RF switch of claim 6 , wherein the insulation layer is operable to confine thermal energy generated by the heater element.
10 . The PCM RF switch of claim 6 , wherein the insulation layer comprises a nitride-based material.
11 . The PCM RF switch of claim 1 , wherein the oxidation layers are operable to confine thermal energy generated by the heater element.
12 . A phase change material (PCM) device, comprising:
a substrate;
a heater element formed above the substrate;
a dielectric layer formed on the heater element;
oxidation layers formed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the oxidation layers are coplanar with an upper surface of the dielectric layer;
a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element;
spacers formed on the oxidation layers and along sidewalls of the PCM region; and
electrodes formed around the PCM region and over the spacers, wherein the electrodes and the PCM region defines a radio frequency path for the PCM device.
13 . The PCM device of claim 12 , wherein the oxidation layers have a lower thermal conductivity than a thermal conductivity of the dielectric layer.
14 . The PCM device of claim 12 , wherein the oxidation layers comprise a first oxidation layer arranged on a right side of the heater element and a second oxidation layer arranged on a left side of the heater element.
15 . The PCM device of claim 14 , wherein the oxidation layers comprise a Silicon Oxide based material.
16 . The PCM device of claim 12 , wherein the oxidation layers are operable to confine thermal energy generated by the heater element.
17 . The PCM device of claim 12 , further comprising an insulation layer formed between the heater element and the substrate.
18 . The PCM device of claim 12 , wherein the dielectric layer has a tapered shape tapering towards the PCM region.
19 . A phase change material (PCM) device, comprising:
a substrate;
a heater element disposed on the substrate, a lower surface of the heater element being coplanar with an upper surface of the substrate;
a dielectric layer disposed on the heater element;
at least one oxidation layer disposed on the substrate and around the heater element and the dielectric layer, wherein upper surfaces of the at least one oxidation layer are coplanar with an upper surface of the dielectric layer;
a PCM region formed on the dielectric layer, wherein the PCM region is wider than the heater element; and
spacers formed on the at least one oxidation layer and along sidewalls of the PCM region.
20 . The PCM device of claim 19 , wherein the dielectric layer is characterized by a first thermal conductivity, and the at least one oxidation layer is characterized by a second thermal conductivity lower than the first thermal conductivity.