Electronic transistors
The present disclosure relates to an electronic transistor including a body including at least an electrolyte structure, a channel provided in contact with the electrolyte structure, a gate provided in contact with the electrolyte structure; at least three contact elements configured to be connected to an external circuit, at least one of the contact elements, referenced as a Gate contact element, being separated from the electrolyte structure by the gate, and the other contact elements, referenced as a Source contact element and a Drain contact element, being interconnected and being separated from the electrolyte structure by the channel. The electrolyte structure includes an oxygen ion conducting electrolyte structure, the oxygen ion conducting electrolyte structure including a BiMEVOX structure, Bi is Bismuth, ME is a Metal, V is Vanadium and OX is an OXide.
1 . An electronic transistor comprising:
a body comprising at least:
an electrolyte structure;
a channel provided in contact with the electrolyte structure;
a gate provided in contact with the electrolyte structure;
at least three contact elements configured to be connected to an external circuit, at least one of the contact elements, referenced as a Gate contact element, being separated from the electrolyte structure by the gate, and the other contact elements, referenced as a Source contact element and a Drain contact element, being interconnected and being separated from the electrolyte structure by the channel;
the electrolyte structure comprising an oxygen ion conducting electrolyte structure, the oxygen ion conducting electrolyte structure comprising a BiMEVOX structure, Bi being Bismuth, ME being a Metal, V being Vanadium and OX being an Oxide; the stoichiometry of the BiMEVOX structure being Bi 4 V 2-x ME x O 11-δ , 0<x<1 and 0<δ<1.
2 . The transistor according to claim 1 , the metal ME of the BiMEVOX structure is being selected from at least one of the following:
Copper (BiCuVOX);
Cobalt (BiCoVOX);
Nickel (BiNiVOX);
Magnesium (BiMgVOX).
3 . The transistor according to claim 1 , the BiMEVOX structure being configured to work in a temperature between 0° C. and 200° C.
4 . The transistor according to claim 1 , the channel comprising a Mixed Ionic and Electronic Conductor (MIEC) oxide configured to vary its oxygen content, including a consequent variation in its electronic conductivity.
5 . The transistor according to claim 1 , the gate comprising a Mixed Ionic and Electronic Conductor (MIEC) oxide configured to vary its oxygen content, including a consequent variation in its electronic conductivity.
6 . The transistor according to claim 1 , the Mixed lonic and Electronic Conductor (MIEC) oxide being selected from at least one of the following:
a fluorite oxide;
a Perovskites oxide;
a Perovskite-derived structure.
7 . The transistor according to claim 6 , the fluorite oxide comprising Rare earth (Re) doped Ceria such as Ce 1-x Re x O 2-δ , Re being selected from at least one of the following: Sm, Gd, Y, Pr, La.
8 . The transistor according to claim 6 , the Perovskites oxide comprising La 1-x Sr 1-x TmO 3-δ , the Transition metal (Tm) being selected from at least one of the following: Ti, V, Cr, Mn, Fe, Co, Cu, Ni, and 0<x<1, such as a MIEC La 0.5 Sr 0.5 FeO 3-δ (LSF), where and 0<δ<0.5.
9 . The transistor according to claim 6 , the Perovskite-derived structure comprising a Ruddlesden-Popper phase La 1-x Sr x TmO 4+δ , Tm being a Transition metal selected from at least one of the following: Mn, Cu, Ni, and 0<x<1.
10 . The transistor according to claim 1 , the material of each of the at least three contact elements being selected from at least one of the following:
a metal material;
an electrically conductive polymer material;
an electrically conductive ceramic material.
11 . An electronic transistor comprising:
a body comprising at least:
an electrolyte structure;
a channel provided in contact with the electrolyte structure;
a gate provided in contact with the electrolyte structure;
at least three contact elements configured to be connected to an external circuit, at least one of the contact elements, referenced as a Gate contact element, being separated from the electrolyte structure by the gate, and the other contact elements, referenced as a Source contact element and a Drain contact element, being interconnected and being separated from the electrolyte structure by the channel;
the electrolyte structure comprising an oxygen ion conducting electrolyte structure, the oxygen ion conducting electrolyte structure comprising a BiMEVOX structure, Bi being Bismuth, ME being a Metal, V being Vanadium and OX being an OXide, the stoichiometry of the BiMEVOX structure being Bi.sub.4V.sub.2−xME.sub.xO.sub.11−δ, 0<x<1 and 0<δ<1.
12 . The transistor according to claim 11 , the BiMEVOX structure being configured to work at room temperature.
13 . The transistor according to claim 11 , the oxide being selected from at least one of the following:
a fluorite oxide;
a Perovskites oxide;
a Perovskite-derived structure.
14 . The transistor according to claim 13 , the Perovskites oxide comprising a MIEC La 0.5 Sr 0.5 FeO 3-δ (LSF), and 0<δ<0.5.
15 . The transistor according to claim 11 , further comprising a seed between the Gate contact element and the gate and/or between the channel and at least one of the Source and the Drain contact elements.
16 . A method of forming an electronic transistor, the method comprising:
depositing a channel;
forming a first contact element, referenced as a Source contact element, and a second contact element, referenced as a Drain contact element, onto the channel;
depositing an electrolyte structure, the electrolyte structure comprising a BiMEVOX structure, where Bi is Bismuth, ME is a Metal, V is Vanadium and OX is an OXide; the stoichiometry of the BiMEVOX structure being Bi 4 V 2-x ME x O 11-δ , 0<x<1 and 0<δ<1;
depositing a gate onto the electrolyte structure;
forming at least a third contact element, referenced as a Gate contact element, onto the gate.
17 . The method according to claim 16 , the depositing the channel and depositing the gate comprising:
depositing the channel and the gate onto the same side of the deposited electrolyte structure, the channel and the gate being in contact with the electrolyte structure.
18 . The method according to claim 16 , the depositing the electrolyte structure comprising:
depositing the electrolyte structure onto the side of the deposited channel that is opposed to the side of the deposited channel in on which the first contact element and the second contact element are formed, the channel being in contact with the electrolyte structure;
the depositing the gate onto the electrolyte structure comprising:
depositing the gate onto the side of the electrolyte structure that is opposed to the side on which the electrolyte structure is in contact with the channel, the gate being in contact with the electrolyte structure.
19 . The method according to claim 16 , further comprising:
depositing a seed onto the channel before forming the first contact element and/or the second contact element, the seed being between the channel and the first contact element and/or the channel and the second contact element.
20 . The method according to claim 19 , further comprising:
depositing a seed onto the gate before forming the third contact element, the seed being between the gate and the third contact element.