Substrate processing method and substrate processing apparatus
A processing method for a substrate processing apparatus including a chamber in which a heating plate configured to heat a substrate placed on the heating plate is located including heating the heating plate to a first temperature, cooling the heating plate to a second temperature from the first temperature, supplying dry gas into the chamber during the heating and the cooling, and carrying in the substrate onto the heating plate after the cooling.
1 . A processing method for a substrate processing apparatus including a chamber in which a heating plate configured to heat a substrate to be placed on the heating plate is located, the processing method comprising:
heating the heating plate to a first temperature;
cooling the heating plate to a second temperature from the first temperature, the first temperature is higher than the second temperature;
supplying dry gas into the chamber continuously during both the heating and the cooling, the supplying of the dry gas is started before the heating plate reaches a third temperature at which outgas is generated from the heating plate; and
carrying in the substrate onto the heating plate after the cooling.
2 . The processing method according to claim 1 , wherein the substrate processing apparatus carries the substrate into the chamber in a state where the heating plate is heated to the second temperature.
3 . The processing method according to claim 1 , wherein in a case where a plurality of substrates is continuously processed, the heating is performed only before a first substrate is carried in.
4 . The processing method according to claim 1 , wherein the heating is performed again in a case where the heating plate is exposed to air containing moisture for a certain period of time or longer.
5 . The processing method according to claim 1 , wherein a period during which the heating is performed is changed depending on a waiting time of the substrate processing apparatus.
6 . The processing method according to claim 1 , wherein the first temperature is 250° C. or higher.
7 . The processing method according to claim 1 , wherein the heating plate has a structure including aluminum nitride.
8 . The processing method according to claim 1 , wherein the dry gas is sprayed onto the heating plate.
9 . The processing method according to claim 1 , wherein the dry gas is any one of clean dry air, nitrogen (N 2 ) gas, and inert gas.
10 . The processing method according to claim 1 , wherein the substrate processing apparatus further includes an exhaust unit configured to exhaust atmosphere within the chamber at least during the heating.
11 . The processing method according to claim 1 , wherein the substrate processing apparatus includes a measurement unit configured to measure atmosphere near the heating plate.
12 . The processing method according to claim 11 , wherein the substrate processing apparatus determines whether to carry the substrate into the chamber depending on a result of the measurement of the atmosphere near the heating plate.
13 . The processing method according to claim 12 , wherein the atmosphere near the heating plate is measured by using any one of a particle counter, a chromatography, a laser displacement meter, a spectral interferometer, and a hydrometer.