Inspection device, inspection method of semiconductor substrate, manufacturing method of semiconductor substrate, and manufacturing method of semiconductor device
An inspection device is an inspection device that inspects a semiconductor substrate. The inspection device includes a stage, a first ring, and a second ring. A first recess is provided on an upper surface of the stage. The first recess has a ring shape in plan view. The first ring is elastic. The first ring is disposed in the first recess. The second ring presses the first ring in an inward direction of the ring shape so as to press the first ring toward an inner side surface of a side surface of the first recess. The first ring projects toward an upper side further than the upper surface of the stage. In the stage, an exhaust hole is provided. The semiconductor substrate placed on the first ring is vacuum-sucked with exhaustion through the exhaust hole.
1 . An inspection device that inspects a semiconductor substrate, comprising:
a stage;
a first ring; and
a second ring, wherein
a first recess is provided on an upper surface of the stage and a side surface of the stage, such that a side opening is provided on the side surface of the stage,
the first recess has a ring shape in plan view,
the first ring is elastic,
the first ring is disposed in the first recess,
the second ring presses the first ring in an inward direction of the ring shape so as to press the first ring toward an inner side surface of a side surface of the first recess,
the first ring projects toward an upper side further than the upper surface of the stage,
in the stage, an exhaust hole is provided, the exhaust hole including an opening in a region of the upper surface of the stage surrounded by the first recess in plan view, and
the semiconductor substrate placed on the first ring is vacuum-sucked with exhaustion through the exhaust hole.
2 . The inspection device according to claim 1 , wherein
the inner side surface of the side surface of the first recess inclines so that an upper side of the inner side surface is located on an outer side of the stage than a lower side of the inner side surface.
3 . The inspection device according to claim 1 , further comprising
a vacuum pump and a pressure gauge, wherein
the exhaustion is performed using the vacuum pump, and
the pressure gauge measures a pressure of a region surrounded by the semiconductor substrate, the first ring, and the stage.
4 . The inspection device according to claim 1 , wherein
the first ring is an O-ring.
5 . An inspection method of a semiconductor substrate using the inspection device according to claim 1 , the inspection method comprising:
placing the semiconductor substrate on the first ring;
vacuum-sucking the semiconductor substrate placed on the first ring with the exhaustion while pressing the first ring in the inward direction by using the second ring; and
measuring a pressure of a region surrounded by the semiconductor substrate, the first ring, and the stage.
6 . The inspection method of the semiconductor substrate according to claim 5 , wherein
in the measurement, a height of an upper surface of the semiconductor substrate at a position of the first ring is higher than the height of an upper surface of the semiconductor substrate at a center of the ring shape of the first recess by 0.1 mm or more and 0.9 mm or less.
7 . The inspection method of the semiconductor substrate according to claim 5 , wherein
quality of the semiconductor substrate is determined based on results of the measurement.
8 . The inspection method of the semiconductor substrate according to claim 5 , wherein
whether or not there is a through hole in the semiconductor substrate is determined based on results of the measurement.
9 . A manufacturing method of a semiconductor substrate, comprising:
preparing a semiconductor substrate; and
performing inspection of the semiconductor substrate by using the inspection method of the semiconductor substrate according to claim 5 .
10 . The manufacturing method of the semiconductor substrate according to claim 9 , further comprising:
forming an epitaxial layer on the semiconductor substrate through epitaxial growth; and
performing the inspection of the semiconductor substrate after the forming of the epitaxial layer.
11 . A manufacturing method of a semiconductor device, comprising:
preparing a semiconductor substrate manufactured by using the manufacturing method of the semiconductor substrate according to claim 9 ; and
forming a semiconductor element on the semiconductor substrate.
12 . An inspection method of a semiconductor substrate using the inspection device according to claim 1 , the inspection method comprising:
placing the semiconductor substrate on the first ring;
vacuum-sucking the semiconductor substrate placed on the first ring with the exhaustion while pressing the first ring in the inward direction by using the second ring; and
measuring a degree of leakage of outside air to a region surrounded by the semiconductor substrate, the first ring, and the stage.
13 . The inspection method of the semiconductor substrate according to claim 12 , wherein
in the measurement, a height of an upper surface of the semiconductor substrate at a position of the first ring is higher than the height of an upper surface of the semiconductor substrate at a center of the ring shape of the first recess by 0.1 mm or more and 0.9 mm or less.
14 . The inspection method of the semiconductor substrate according to claim 12 , wherein
quality of the semiconductor substrate is determined based on results of the measurement.
15 . The inspection method of the semiconductor substrate according to claim 12 , wherein
whether or not there is a through hole in the semiconductor substrate is determined based on results of the measurement.
16 . A manufacturing method of a semiconductor substrate, comprising:
preparing a semiconductor substrate; and
performing inspection of the semiconductor substrate by using the inspection method of the semiconductor substrate according to claim 12 .
17 . The manufacturing method of the semiconductor substrate according to claim 16 , further comprising:
forming an epitaxial layer on the semiconductor substrate through epitaxial growth; and
performing the inspection of the semiconductor substrate after the forming of the epitaxial layer.
18 . A manufacturing method of a semiconductor device, comprising:
preparing a semiconductor substrate manufactured by using the manufacturing method of the semiconductor substrate according to claim 16 ; and
forming a semiconductor element on the semiconductor substrate.
19 . An inspection device that inspects a semiconductor substrate, comprising:
a stage;
a first ring;
a second ring, wherein
a first recess is provided on an upper surface of the stage,
the first recess has a ring shape in plan view,
the first ring is elastic,
the first ring is disposed in the first recess,
the second ring presses the first ring in an inward direction of the ring shape so as to press the first ring toward an inner side surface of a side surface of the first recess,
the first ring projects toward an upper side further than the upper surface of the stage,
in the stage, an exhaust hole is provided, the exhaust hole including an opening in a region of the upper surface of the stage surrounded by the first recess in plan view, and
the semiconductor substrate placed on the first ring is vacuum-sucked with exhaustion through the exhaust hole;
a first sheet disposed in a region of the upper surface of the stage surrounded by the first recess in plan view; and
a second sheet disposed on the first sheet, wherein
the second sheet is a porous sheet.
20 . The inspection device according to claim 19 , wherein
the first sheet is elastic.
21 . The inspection device according to claim 19 , wherein
an upper surface of the first sheet is curved, and
the upper surface of the first sheet is recessed due to the curve.
22 . The inspection device according to claim 19 , wherein
the first sheet includes at least one hole penetrating from the upper surface to a lower surface, and
the exhaustion is performed through at least one of the at least one hole of the first sheet and the second sheet.
23 . The inspection device according to claim 19 , wherein
an upper edge of the first ring disposed in the first recess is higher than a height at a center of the ring shape of the first recess of an upper surface of the second sheet disposed on the first sheet disposed on the upper surface of the stage by 0.1 mm or more and 0.9 mm or less.
24 . The inspection device according to claim 19 , wherein
a second recess is provided on the upper surface of the stage,
the second recess is surrounded by the first recess in plan view, and
the first sheet is disposed in the second recess.
25 . The inspection device according to claim 24 , wherein
in the stage, an air hole connecting the first recess and the second recess is provided.
26 . The inspection device according to claim 24 , wherein
the upper surface of the stage inclines so that a side of the first recess is higher and a side of the second recess is lower between the first recess and the second recess.