IP Library Granted Patent US 12701973
Granted Patent B2
US 12701973 · App. 18/196,184 · Granted Aug 4, 2026

Strong base-assisted direct bonding method

Inventors: Frank Fournel (Grenoble, FR); Aziliz Calvez (Grenoble, FR); Vincent Larrey (Grenoble, FR); Christophe Morales (Grenoble, FR)
Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
H10P90/1914B32B7/12B32B18/00B32B37/1284H10W10/181B32B2037/1276B32B2255/20B32B2309/02
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Quick Facts
Patent No.
US 12701973
App. No.
18/196,184
Granted
Aug 4, 2026
Kind
B2
Abstract

A direct bonding method between two substrates includes the steps of: providing a first substrate and a second substrate respectively including a first hydrophilic bonding surface and a second hydrophilic bonding surface; depositing on the first and/or on the second hydrophilic bonding surface a basic solution consisting of strong base molecules and deionized water; drying the first and/or the second hydrophilic bonding surface until a concentration with between approximately 10 9 atom/cm 2 and 10 15 atom/cm 2 of cations resulting from the strong base molecules on the first and/or on the second hydrophilic bonding surface; contacting the first and the second hydrophilic bonding surface so as to obtain a spontaneous direct bonding and an assembly of the first substrate with the second substrate including a direct bonding interface.

Claims (14)

1 . A direct bonding method between two substrates, the method comprising the steps of:

a) providing a first substrate and a second substrate respectively comprising a first hydrophilic bonding surface and/or a second hydrophilic bonding surface,

b) depositing on the first and/or on the second hydrophilic bonding surface a basic solution consisting of strong base molecules and deionized water,

c) drying the first and/or the second hydrophilic bonding surface so as to reach a concentration comprised between approximately 10 9 atoms/cm 2 and 10 15 atoms/cm 2 of cations resulting from the strong base molecules on the first and/or on the second hydrophilic bonding surface,

d) bringing the first and the second hydrophilic bonding surface into contact so as to obtain a spontaneous direct bonding and an assembly of the first substrate with the second substrate comprising a direct bonding interface.

2 . The direct bonding method according to claim 1 , wherein the drying step c) is carried out so that the first hydrophilic bonding surface and the second hydrophilic bonding surface are covered with one to five atomic monolayers of H 2 O.

3 . The direct bonding method according to claim 1 , wherein the strong base molecules are selected from the bases LiOH, NaOH, KOH, RbOH, CsOH, Mg(OH) 2 , Ca(OH) 2 , Sr(OH) 2 , Ba(OH) 2 and a mixture of these bases.

4 . The direct bonding method according to claim 1 , wherein the basic solution has a concentration of strong base molecules comprised between 10 −8 mol/l and 10 −2 mol/l in the deionized water.

5 . The direct bonding method according to claim 1 , wherein step c) is carried out by centrifugation, for example with a rotational speed of approximately 2000 revolutions/min of the first and/or the second hydrophilic bonding surface.

6 . The direct bonding method according to claim 1 , comprising a step e) of applying a heat treatment to the assembly obtained in step d) at a temperature comprised between 50° C. and 500° C.

7 . The direct bonding method according to claim 1 , wherein the first and second substrates are made of silicon.

8 . The direct bonding method according to claim 1 , wherein the first hydrophilic bonding surface and/or the second hydrophilic bonding surface are formed at least in part by a hydrophilic film in a material selected from silicon oxide, silicon nitride, copper oxide and a mixture of these materials.

9 . The direct bonding method according to claim 1 , wherein the first substrate provided in step a) comprises one or more first vignettes originating from the vignetting of the first substrate so to obtain a direct bonding of one or more first vignettes to the second substrate.

10 . An assembly comprising a first substrate and a second substrate made of silicon respectively comprising a first hydrophilic bonding surface and a second hydrophilic bonding surface, the first and the second surface hydrophilic bonding surface being bonded by direct bonding, strong base molecules being arranged with a concentration comprised between approximately 10 9 atoms/cm 2 and 10 15 atoms/cm 2 , at the direct bonding interface between the first and the second hydrophilic bonding surface.