IP Library › Granted Patent US 12701999

Granted Patent B2

US 12701999 · App. 18/357,646 · Granted Aug 4, 2026

Semiconductor power module

Inventors: Katsushi Nakada (Tokyo, JP); Yoshitaka Miyaji (Tokyo, JP)

Assignee: Mitsubishi Electric Corporation

H10W40/22 H10W70/481

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Quick Facts

Patent No.: US 12701999
App. No.: 18/357,646
Granted: Aug 4, 2026
Kind: B2

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Abstract

Provided is a semiconductor power module in which an electric field at corners of electrodes and around the corners is reduced while size reduction and voltage increase are achieved. The semiconductor power module includes a plurality of electrodes having different potentials and laid over each other with an interval therebetween. As seen in a direction in which the plurality of electrodes are laid over each other, each of the plurality of electrodes has three or more corners, at least a part of the corner of one of adjacent two of the electrodes is provided on an outer side relative to another of the adjacent two electrodes, and at least a part of the corner of the other electrode is provided on an outer side relative to the one electrode.

Claims (111)

1 . A semiconductor power module comprising a plurality of electrodes having different potentials and laid over each other with an interval therebetween, wherein

as seen in a direction in which the plurality of electrodes are laid over each other,

each of the plurality of electrodes has three or more corners,

at least a part of the corner of one of adjacent two of the electrodes is provided on an outer side relative to another of the adjacent two electrodes, and

at least a part of the corner of the other electrode is provided on an outer side relative to the one electrode.

2 . The semiconductor power module according to claim 1 , wherein

the plurality of electrodes are formed in plate shapes,

side-line parts on both sides of the corners of the adjacent two electrodes overlap each other as seen in the direction in which the plurality of electrodes are laid over each other, and

in the adjacent two electrodes, a shape of the corner of the one electrode and a shape of the corner of the other electrode are different from each other such that a first part of the corner of the one electrode is located on an outer side relative to a first part of the corner of the other electrode, and a second part of the corner of the other electrode is located on an outer side relative to a second part of the corner of the one electrode.

3 . The semiconductor power module according to claim 2 , wherein

the shape of the corner of each of the adjacent two electrodes is an elliptical-arc shape, and a first distance from a curvature start point to a curvature middle point of the elliptical-arc shape and a second distance from a curvature end point to the curvature middle point of the elliptical-arc shape are different from each other,

a longer one of the first distance and the second distance is defined as a major radius and a shorter one is defined as a minor radius, and

the major radiuses in the adjacent two electrodes cross each other as seen in the direction in which the plurality of electrodes are laid over each other.

4 . The semiconductor power module according to claim 3 , wherein

in each of the adjacent two electrodes, a ratio of the major radius to the minor radius is not greater than 3.

5 . The semiconductor power module according to claim 1 , wherein

the plurality of electrodes are formed in plate shapes, and shapes of the corners are circular-arc shapes or elliptical-arc shapes and are the same shape,

regarding the adjacent two electrodes, an intersection of extended lines of side lines on both sides of the corner of the one electrode is defined as a first intersection, an intersection of extended lines of side lines on both sides of the corner of the other electrode is defined as a second intersection, and a distance between the adjacent first and second intersections is defined as an intersection-intersection distance,

the intersection-intersection distance has a value greater than 0, and

a relationship between the intersection-intersection distance and an electric field at the corner of each of the adjacent two electrodes is represented by an exponential function or a logarithmic function.

6 . The semiconductor power module according to claim 5 , wherein

a value obtained by dividing the electric field at the corner of the one electrode or the other electrode by an overlap electric field which is the electric field at the corner when the corners of both electrodes overlap each other as seen in the direction in which the one electrode and the other electrode are laid over each other, is denoted by y,

a value obtained by dividing the intersection-intersection distance by a curvature radius in a case where the shapes of the corners are the circular-arc shapes or a value obtained by dividing the intersection-intersection distance by a major radius in a case where the shapes of the corners are the elliptical-arc shapes, is denoted by x, and

the exponential function or the logarithmic function is as follows:

(

0.4

)

exp

⁡

(

)

0.4

⁢

{

(

0.4

)

(

0.4

)

}

7 . The semiconductor power module according to claim 1 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first power semiconductor element which is a power semiconductor element formed in a plate shape and joined to a one-side surface of the first heat spreader, and a second power semiconductor element which is a power semiconductor element formed in a plate shape and joined to a one-side surface of the second heat spreader;

a first conductive layer which is a conductive layer formed in a plate shape and joined to an other-side surface of the first heat spreader via an insulating layer, and a second conductive layer which is a conductive layer formed in a plate shape and joined to an other-side surface of the second heat spreader via an insulating layer;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

a second lead frame which extends in an arrangement direction of the heat spreaders and whose other-side surface is, at one end, joined to a one-side surface of the first power semiconductor element, and is, at another end, joined to the one-side surface of the second heat spreader; and

a third lead frame which extends in the arrangement direction of the heat spreaders and whose other-side surface is, at one end, joined to a one-side surface of the second power semiconductor element and is, at least partially, arranged being laid over a one-side surface of the second lead frame with an interval therebetween, wherein

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.

8 . The semiconductor power module according to claim 2 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.

9 . The semiconductor power module according to claim 3 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.

10 . The semiconductor power module according to claim 4 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.

11 . The semiconductor power module according to claim 5 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.

12 . The semiconductor power module according to claim 6 , comprising:

a first heat spreader and a second heat spreader which are heat spreaders formed in plate shapes and arranged side by side;

a first lead frame whose other-side surface is joined to the one-side surface of the first heat spreader;

either pair or each pair of, the heat spreader and the conductive layer, and the second lead frame and the third lead frame, are the adjacent two electrodes.