Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, an electronic component, a cover, a heat conduction component and a dam. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The heat conduction component is disposed between the electronic component and the cover. The dam is disposed between the electronic component and the cover and surrounds the heat conduction component.
1 . A semiconductor device, comprising:
a substrate;
an electronic component disposed on the substrate;
a cover disposed on the substrate and covering the electronic component;
a heat conduction component disposed between the electronic component and the cover; and
a dam disposed between the electronic component and the cover and surrounding the heat conduction component;
wherein the dam and one of the electronic component or the cover are integrated into one piece with the same material.
2 . The semiconductor device as claimed in claim 1 , wherein the heat conduction component is a solid thermal Interface Material (TIM).
3 . The semiconductor device as claimed in claim 1 , further comprising:
a second adhesive layer disposed between the substrate and the cover.
4 . The semiconductor device as claimed in claim 1 , wherein the electronic component has a top surface and a recess recessed with respect to the top surface to form the dam.
5 . The semiconductor device as claimed in claim 4 , further comprises:
a third adhesive layer disposed between the dam and the cover.
6 . The semiconductor device as claimed in claim 1 , wherein the cover comprises:
the dam; and
a plate having a first surface;
wherein the dam protrudes with respect to the first surface.
7 . The semiconductor device as claimed in claim 6 , further comprises:
a third adhesive layer disposed between the dam and the electronic component.
8 . The semiconductor device as claimed in claim 1 , further comprises:
a solder ball disposed under the substrate and having a first melting point;
wherein the dam has a second melting point higher than the first melting point.