Semiconductor device and manufacturing method thereof

1 . A semiconductor device, comprising:

a substrate module, comprising:

a first substrate;

a first voltage regulator component embedded in the first substrate and comprising a plurality of surfaces;

a first grounded Faraday component embedded in the first substrate and covering one or more of the surfaces of the first voltage regulator component; and

a first processor disposed over the substrate module;

wherein the first substrate has a recess within which the first voltage regulator component is disposed, the recess extends from an upper surface of the first substrate, the upper surface is high than the first voltage regulator component.

2 . The semiconductor device as claimed in claim 1 , further comprises:

a second substrate over which the first substrate is disposed.

3 . The semiconductor device as claimed in claim 1 , wherein the substrate module further comprises:

a first RDL containing a metal plane formed on a first side of the first substrate and electrically connected with the first voltage regulator component.

4 . The semiconductor device as claimed in claim 3 , wherein the substrate module further comprises:

a second RDL containing a metal plane formed on a second side of the first substrate and electrically connected with the first voltage regulator component; and

a conductive through via formed within the first substrate on one side, two sides, three sides or all four sides of the first voltage regulator component connecting the first RDL with the second RDL.

5 . The semiconductor device as claimed in claim 1 , wherein the first grounded Faraday component is grounded through a ground plane formed in the first substrate which is a fine-line/space substrate.

6 . The semiconductor device as claimed in claim 1 , wherein the substrate module further comprises:

a second voltage regulator component embedded in the first substrate;

wherein the first voltage regulator component and the second voltage regulator component are disposed side by side.

7 . The semiconductor device as claimed in claim 1 , wherein the substrate module further comprises:

a second voltage regulator component embedded in the first substrate;

wherein the first voltage regulator component and the second voltage regulator component are disposed in a thickness direction.

8 . The semiconductor device as claimed in claim 1 , further comprises:

a memory element disposed over the substrate module;

wherein the first processor and the memory element are disposed side by side.

9 . The semiconductor device as claimed in claim 1 , further comprises:

a first memory element disposed over the first processor.

10 . The semiconductor device as claimed in claim 8 , further comprises:

a second processor disposed over the substrate module; and

a second memory element disposed over the second processor;

wherein the first processor and the second processor are disposed side by side.

11 . The semiconductor device as claimed in claim 1 , wherein the first voltage regulator component is disposed within the recess; the substrate module further comprises:

a first encapsulation body formed within the recess and encapsulating the first voltage regulator component; and

the first grounded Faraday component covering the first encapsulation body.

12 . The semiconductor device as claimed in claim 11 , wherein the substrate module further comprises:

a first RDL formed on the first grounded Faraday component.

13 . The semiconductor device as claimed in claim 11 , wherein the substrate module further comprises:

a second voltage regulator component disposed within the recess;

a second encapsulation body formed within the recess and encapsulating the second voltage regulator component, wherein the first encapsulation body and the second encapsulation body are separated by an interval;

a second grounded Faraday component covering the second encapsulation body; and

a metal filling the interval.