Metal component including phosphorous-containing nickel layer
There is provided a metal component used for manufacturing a semiconductor device, including: a base material having an electrical conductivity; a nickel layer formed on a surface of the base material and containing nickel as a main component; and a noble metal layer formed on a surface of the nickel layer. The nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus. According to the metal component of the present disclosure, a thickness of the nickel layer can be reduced while good characteristics can be maintained.
1 . A metal component used for manufacturing a semiconductor device, the metal component comprising:
a base material having an electrical conductivity;
a nickel layer formed on a surface of the base material and containing nickel as a main component; and
a noble metal layer formed on a surface of the nickel layer, wherein
the nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 0.2 in percent by weight of phosphorus.
2 . The metal component according to claim 1 , wherein a surface of the first nickel layer has a rough surface.
3 . The metal component according to claim 1 , wherein the first nickel layer is formed on the surface of the base material, and the second nickel layer is formed on a surface of the first nickel layer.
4 . The metal component according to claim 1 , wherein the second nickel layer is formed on the surface of the base material, and the first nickel layer is formed on a surface of the second nickel layer.
5 . The metal component according to claim 1 , wherein the second nickel layer has a thickness of 0.1 μm or more.
6 . The metal component according to claim 1 , wherein a ratio of a thickness of the second nickel layer in the nickel layer is 50% or less.
7 . The metal component according to claim 1 , wherein the noble metal layer is formed of at least one layer, and the noble metal layer is formed of at least one of palladium, gold, and silver.
8 . A metal component used for manufacturing a semiconductor device, the metal component comprising:
a base material having an electrical conductivity;
a nickel layer formed on a surface of the base material and containing nickel as a main component; and
a noble metal layer formed on a surface of the nickel layer, wherein
the nickel layer includes a first nickel layer not containing phosphorus, a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus formed on a first surface of the first nickel layer, and a third nickel layer containing 0.01 to 1 in percent by weight of phosphorus is formed on a second surface of the first nickel layer.