IP Library Granted Patent US 12702021
Granted Patent B2
US 12702021 · App. 18/161,451 · Granted Aug 4, 2026

Substrate-on-die package architecture

Inventors: Rajen Murugan (Dallas, TX); Yiqi Tang (Allen, TX); Sylvester Ankamah-Kusi (Dallas, TX)
Assignee: TEXAS INSTRUMENTS INCORPORATED
H10W70/481H10W74/016H10W74/129H10W72/07554H10W72/536H10W72/5363H10W72/5434H10W72/547H10W90/728H10W90/755H10W90/758
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Quick Facts
Patent No.
US 12702021
App. No.
18/161,451
Granted
Aug 4, 2026
Kind
B2
Abstract

A packaged semiconductor device includes a lead frame and a semiconductor die. The semiconductor die has first and second opposing sides, and the first side of the die is mounted to the lead frame. A first set of bond wires and/or bump bonds are configured to electrically couple the die to the lead frame. A passive circuit element is on a substrate, and the substrate is mounted to the second side of the die. A second set of bond wires and/or bump bonds are configured to electrically couple the passive circuit element to the die. A molding material is configured to encapsulate the passive circuit element, the die, and at least a portion of the lead frame.

Claims (36)

1 . A packaged semiconductor device comprising:

a lead frame;

a semiconductor die having first and second opposing sides, the first side of the die mounted to the lead frame;

a first set of bond wires and/or bump bonds configured to electrically couple the die to the lead frame;

a substrate-based passive circuit element mounted to the second side of the die;

a second set of bond wires and/or bump bonds configured to electrically couple the passive circuit element to the die; and

a molding material configured to encapsulate the passive circuit element, the die, and at least a portion of the lead frame.

2 . The packaged semiconductor device of claim 1 , wherein the lead frame is a quad flat no-lead (QFN) or quad flat package (QFP) lead frame.

3 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element is a routable lead frame (RLF) substrate.

4 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element is an embedded trace substrate (ETS).

5 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element is a chip size package (CSP) substrate.

6 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element includes an interdigital capacitor.

7 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element includes a low-pass filter.

8 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element includes a balun.

9 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element includes an antenna.

10 . The packaged semiconductor device of claim 1 , wherein the substrate-based passive circuit element is an inductor coil on the substrate.

11 . A method of fabricating a packaged semiconductor device, the method comprising:

mounting a substrate-based passive circuit element to a first side of a semiconductor die;

mounting a second side of the semiconductor die to a die pad of a lead frame, the second side being opposite the first side;

electrically coupling the substrate-based passive circuit element, the die, and the lead frame; and

encapsulating the substrate-based passive circuit element, the die, and at least a portion of the lead frame in a molding material.

12 . The method of claim 11 , further comprising fabricating the substrate-based passive circuit element on the substrate.

13 . The method of claim 12 , wherein the fabricating the substrate-based passive element comprises fabricating the substrate-based passive circuit element on a routable lead frame (RLF) substrate.

14 . The method of claim 12 , wherein the fabricating the substrate-based passive circuit element comprises fabricating the passive circuit element on an embedded trace substrate (ETS).

15 . The method of claim 12 , wherein the fabricating the substrate-based passive circuit element comprises fabricating the substrate-based passive circuit element on a chip size package (CSP) substrate-based passive circuit element.

16 . The method of claim 11 , wherein the substrate-based passive circuit element includes an interdigital capacitor on the substrate-based passive circuit element.

17 . The method of claim 11 , wherein the substrate-based passive circuit element includes a low-pass filter formed on the substrate-based passive circuit element.

18 . The method of claim 11 , wherein the substrate-based passive circuit element includes a balun formed on the substrate-based passive circuit element.

19 . The method of claim 11 , wherein the substrate-based passive circuit element includes an antenna formed on the substrate-based passive circuit element.

20 . The method of claim 11 , wherein the substrate-based passive circuit element includes an inductor coil formed on the substrate-based passive circuit element.

21 . A packaged semiconductor device comprising:

a quad flat no-lead (QFN) or quad flat package (QFP) lead frame having a die pad and a plurality of bond pads;

a semiconductor die having first and second surfaces on opposite sides of the die, in which the second surface includes bond pads and the first surface is mounted to the die pad;

bond wires or bump bonds electrically coupled between the bond pads of the die and bond pads of the lead frame;

an interdigital capacitor having capacitor terminals on a routable lead frame substrate, in which the interdigital capacitor terminals are electrically coupled to bond pads of the die and the substrate is mounted to the second side of the die; and

a molding material encapsulating the inter-digital capacitor device, the die, and at least a portion of the lead frame.