Semiconductor package and method of manufacturing the semiconductor package

1 . A semiconductor package, comprising:

a core substrate having a cavity;

a semiconductor chip disposed in the cavity of the core substrate and having chip pads provided on a front surface of the semiconductor chip;

a lower redistribution wiring layer covering a first surface of the core substrate, the lower redistribution wiring layer having first redistribution wirings electrically connected to the chip pads;

a sealing layer covering a second surface of the core substrate opposite to the first surface, the sealing layer filling the cavity;

at least one upper insulating layer provided on the sealing layer, the at least one upper insulating layer having second redistribution wirings electrically connected to conductive structures of the core substrate;

a protective layer provided on the at least one upper insulating layer, the protective layer having an opening that exposes at least a portion of an uppermost redistribution wiring among the second redistribution wirings; and

a bonding pad provided on the protective layer and electrically connected to the uppermost redistribution wiring through the opening of the protective layer,

wherein the bonding pad includes,

a first plating pattern formed on the uppermost redistribution wiring, the first plating pattern including a via pattern provided in the opening and a pad pattern formed on the via pattern to be exposed from the opening;

a second plating pattern formed on the first plating pattern; and

a third plating pattern formed on the second plating pattern,

wherein the second plating pattern covers an upper surface and a side surface of the first plating pattern exposed through the opening.

2 . The semiconductor package of claim 1 , wherein the via pattern has a first diameter, and the pad pattern has a second diameter greater than the first diameter.

3 . The semiconductor package of claim 2 , wherein the second plating pattern has a third diameter the same as the second diameter.

4 . The semiconductor package of claim 1 , wherein the first plating pattern includes the same material as the uppermost redistribution wiring.

5 . The semiconductor package of claim 4 , wherein the first plating pattern includes copper.

6 . The semiconductor package of claim 1 , wherein the second plating pattern includes nickel (Ni), and the third plating pattern includes gold (Au).

7 . The semiconductor package of claim 1 , wherein a thickness of the protective layer is within a range of 10 μm to 20 μm.

8 . The semiconductor package of claim 1 , wherein a diameter of the opening of the protective layer is within a range of 50 μm to 250 μm.

9 . The semiconductor package of claim 1 , wherein the first plating pattern has a first thickness, the second plating pattern has a second thickness less than the first thickness, and the third plating pattern has a third thickness less than the second thickness.

10 . A semiconductor package, comprising:

at least one semiconductor chip;

a frame surrounding the at least one semiconductor chip and having conductive connectors;

a lower redistribution wiring layer arranged on a lower surface of the frame and having first redistribution wirings electrically connected to chip pads of the at least one semiconductor chip and the conductive connectors; and

an upper redistribution wiring layer arranged on an upper surface of the frame, the upper redistribution wiring layer including at least one upper insulating layer on the frame having second redistribution wirings electrically connected to the conductive connectors of the frame, a protective layer provided on the at least one upper insulating layer and having an opening that exposes at least a portion of an uppermost redistribution wiring among the second redistribution wirings, and a bonding pad provided on the protective layer and electrically connected to the uppermost redistribution wiring through the opening of the protective layer,

wherein the bonding pad includes:

a first plating pattern having a via pattern filling the opening of the protective layer and a pad pattern exposed from the opening on the via pattern,

a second plating pattern on the first plating pattern, and

a third plating pattern on the second plating pattern, and

wherein the second plating pattern covers an upper surface and a side surface of the first plating pattern exposed through the opening.

11 . The semiconductor package of claim 10 , wherein the via pattern has a first diameter, and the pad pattern has a second diameter greater than the first diameter.

12 . The semiconductor package of claim 11 , wherein the second plating pattern has a third diameter the same as the second diameter.

13 . The semiconductor package of claim 10 , wherein the second plating pattern includes nickel (Ni), and the third plating pattern includes gold (Au).

14 . The semiconductor package of claim 10 , wherein a thickness of the protective layer is within a range of 10 μm to 20 μm.

15 . The semiconductor package of claim 10 , wherein a diameter of the opening of the protective layer is within a range of 50 μm to 250 μm.

16 . A semiconductor package, comprising:

a lower redistribution wiring layer including first redistribution wirings;

a semiconductor chip disposed on the lower redistribution wiring layer and electrically connected to the first redistribution wirings;

a support member surrounding the semiconductor chip on the lower redistribution wiring layer; and

an upper redistribution wiring layer disposed on the support member, the upper redistribution wiring layer including a sealing layer covering the semiconductor chip, at least one upper insulating layer on the sealing layer having second redistribution wirings electrically connected to conductive structures of the support member, a protective layer provided on the at least one upper insulating layer and having an opening that exposes at least a portion of an uppermost redistribution wiring among the second redistribution wirings, and a bonding pad provided on the protective layer and electrically connected to the uppermost redistribution wiring through the opening of the protective layer,

wherein the bonding pad includes,

a first plating pattern formed on the uppermost redistribution wiring, the first plating pattern including a via pattern provided in the opening and a pad pattern formed on the via pattern to be exposed from the opening;

a second plating pattern formed on the first plating pattern; and

a third plating pattern formed on the second plating pattern,

wherein the second plating pattern covers an upper surface and a side surface of the first plating pattern exposed through the opening.