Semiconductor device comprising metallic film and annular groove provided on the bonding surface
A semiconductor chip according to an embodiment includes a metallic film provided on a semiconductor chip; an insulating film provided on the metallic film and having an opening; a bonding material provided on the metal film in the opening, and the bonding material being bonded to the metallic film; and a connector including a bonding surface bonded to the bonding material, and an annular groove provided on the bonding surface, the annular groove being along the periphery of the bonding surface, and an inner diameter of the annular groove being 60% or more and 90% or less of an outer diameter of the annular groove.
1 . A semiconductor device comprising:
a metallic film provided on a semiconductor chip;
an insulating film provided on the metallic film and having an opening;
a bonding material provided on the metallic film in the opening, and the bonding material being bonded to the metallic film; and
a connector including
a bonding surface bonded to the bonding material, and
an annular groove provided on the bonding surface, the annular groove being along a periphery of the bonding surface, and an inner diameter of the annular groove being 60% or more and 90% or less of an outer diameter of the annular groove,
wherein the connector further includes a plurality of annular grooves provided concentrically with each other, and
wherein a depth of the annular groove provided on the outer side is deeper than a depth of the annular groove provided on the inner side.
2 . The semiconductor device according to claim 1 , wherein
the bonding surface has a rectangular shape, and
the annular groove is formed in the rectangular shape with respect to the bonding surface.
3 . The semiconductor device according to claim 2 , wherein
a corner of the annular groove is chamfered.
4 . The semiconductor device according to claim 1 , wherein
the outer diameter of the annular groove in a predetermined direction parallel to the bonding surface is 90% or more and less than 100% of a length of the bonding surface in the predetermined direction parallel to the bonding surface.
5 . The semiconductor device according to claim 1 , wherein
the inner diameter of the annular groove provided on the innermost side in the predetermined direction parallel to the bonding surface is 60% or more and 90% or less of an outer diameter of the annular groove provided on the outermost side in the predetermined direction parallel to the bonding surface.
6 . The semiconductor device according to claim 1 , wherein
an outer diameter of the annular groove provided on the outermost side in the predetermined direction parallel to the bonding surface is 90% or more and less than 100% of the length of the bonding surface in the predetermined direction parallel to the bonding surface.