Curable resin film, film material for semiconductor device production, curable resin composition for semiconductor device production, and method for producing semiconductor device
A method for producing a semiconductor device, including forming a temporary fixing laminated body including a carrier, and a sealing structure body provided on a main surface of the carrier, and removing the carrier from the temporary fixing laminated body. The temporary fixing laminated body is formed by a method including adhering the curable resin film and the carrier. The carrier is removed from the temporary fixing laminated body by separating a protective layer that is the curable resin film that is cured from the carrier. The curable resin film exhibits a transmittance of 20% or less with respect to light at a wavelength of 355 nm when cured.
1 . A curable resin film comprising:
a light absorbing agent; and
a thermoplastic resin,
wherein the light absorbing agent comprises at least one selected from the group consisting of carbon black, aluminum, nickel, and titanium oxide,
a glass transition temperature of the thermoplastic resin is −40 to 40° C.,
the curable resin film exhibits a transmittance of 20% or less with respect to light at a wavelength of 355 nm when cured, and
when the curable resin film is adhered to a glass substrate with a temperature condition of 25° C., a 90-degree peeling strength between the curable resin film and the glass substrate is 10 N/m or more at 25° C.
2 . The curable resin film according to claim 1 , comprising a silica filler.
3 . The curable resin film according to claim 1 , comprising substantially no silicone compound having a polysiloxane chain.
4 . The curable resin film according to claim 1 , wherein a shear viscosity of the curable resin film is 5000 to 100000 Pa·s at 100° C.
5 . The curable resin film according to claim 1 , wherein a storage modulus of the curable resin film after curing is 300 to 6000 MPa at 25° C. and 0.1 to 200 MPa at 250° C.
6 . A film material for semiconductor device production, comprising:
a support film; and
the curable resin film according to claim 1 , provided on the support film.
7 . A method for producing a semiconductor device, comprising:
forming a temporary fixing laminated body comprising a carrier, and a sealing structure body provided on a main surface of the carrier, the sealing structure body comprising a plurality of semiconductor chips and a sealing portion sealing the plurality of semiconductor chips; and
removing the carrier from the temporary fixing laminated body,
wherein the semiconductor chip comprises a chip main body having a first surface and a second surface on a side opposite to the first surface, and a connection terminal provided on the first surface,
the sealing portion comprises a protective layer covering the second surface of the plurality of semiconductor chips, and a sealing material layer sealing the plurality of semiconductor chips together with the protective layer,
the protective layer is a curable resin film that is cured,
the temporary fixing laminated body is formed by a method including providing a laminated body of the curable resin film and the carrier, and adhering the curable resin film and
the carrier in the laminated body, the carrier is removed from the temporary fixing laminated body by separating the protective layer from the carrier,
the curable resin film exhibits a transmittance of 20% or less with respect to light at a wavelength of 355 nm when cured, and
the carrier is a glass substrate or a transparent resin substrate.
8 . The method according to claim 7 , wherein the protective layer is a permanent film provided in the semiconductor device.
9 . The method according to claim 7 , further comprising forming a plurality of semiconductor devices by cutting the sealing structure body comprising the plurality of semiconductor chips and the sealing portion comprising the protective layer.
10 . The method according to claim 7 , further comprising engraving a surface of the protective layer by irradiation of laser light.
11 . The method according to claim 7 , wherein the temporary fixing laminated body is formed by:
disposing the plurality of semiconductor chips on a surface of the curable resin film stuck to the carrier on a side opposite to the carrier, in a direction in which the second surface is in contact with the curable resin film;
curing the curable resin film, thereby fixing the plurality of semiconductor chips onto the protective layer that is the curable resin film that is cured; and
forming the sealing portion comprising the protective layer and the sealing material layer by forming the sealing material layer on the protective layer, in this order.
12 . The method according to claim 7 ,
wherein the protective layer is separated from the carrier by irradiating the protective layer with laser light, and
wherein the curable resin film comprises a light absorbing agent that absorbs the laser light to produce heat.
13 . The method according to claim 7 , wherein the curable resin film comprises a thermoplastic resin.
14 . The method according to claim 13 , wherein a glass transition temperature of the thermoplastic resin is −40 to 40° C.
15 . The method according to claim 7 , wherein a shear viscosity of the curable resin film is 5000 to 100000 Pa·s at 100° C.
16 . The method according to claim 7 , wherein a storage modulus of the curable resin film after curing is 300 to 6000 MPa at 25° C. and 0.1 to 200 MPa at 250° C.
17 . The method according to claim 12 , wherein the light absorbing agent comprises at least one selected from the group consisting of carbon black, aluminum, nickel, and titanium oxide.
18 . A method for producing a semiconductor device, comprising:
forming a temporary fixing laminated body comprising a carrier, and a sealing structure body provided on a main surface of the carrier, the sealing structure body comprising a plurality of semiconductor chips and a sealing portion sealing the plurality of semiconductor chips; and
removing the carrier from the temporary fixing laminated body,
wherein the semiconductor chip comprises a chip main body having a first surface and a second surface on a side opposite to the first surface, and a connection terminal provided on the first surface,
the sealing portion comprises an integrated protective layer covering the second surface of the plurality of semiconductor chips, and a sealing material layer sealing the plurality of semiconductor chips together with the protective layer,
the protective layer is a curable resin film that is cured,
the carrier is removed from the temporary fixing laminated body by separating the protective layer from the carrier,
the curable resin film exhibits a transmittance of 20% or less with respect to light at a wavelength of 355 nm when cured, and
wherein the temporary fixing laminated body is formed by:
forming a precursor temporary fixing laminated body comprising a temporary fixing material, the plurality of semiconductor chips temporarily fixed onto the temporary fixing material, in a direction in which the first surface is directed toward the temporary fixing material side, and the sealing material layer sealing the plurality of semiconductor chips on the temporary fixing material, the second surface of the plurality of semiconductor chips being exposed from the sealing material layer;
providing the curable resin film covering the second surface and the sealing material layer;
adhering the carrier to the curable resin film;
forming the protective layer by curing the curable resin film; and
removing the temporary fixing material from the precursor temporary fixing laminated body, in this order, to obtain the temporary fixing laminated body.