Package structure and method of manufacturing the same
A package structure includes a semiconductor die, an insulating encapsulation, a first redistribution circuit structure and a surface-modifying film. The semiconductor die has conductive terminals. The insulating encapsulation laterally encapsulates the semiconductor die and exposes the conductive terminals. The first redistribution circuit structure is located over the insulating encapsulation and electrically connected to the semiconductor die. The surface-modifying film is located on the insulating encapsulation and has a plurality of openings exposing edges of the conductive terminals, wherein the surface-modifying film separates the first redistribution circuit structure from the insulating encapsulation.
1 . A package structure, comprising:
a semiconductor die, having conductive terminals and a protection layer covering sidewalls of the conductive terminals;
a first redistribution circuit structure, disposed over and electrically coupled to the semiconductor die; and
a surface-modifying film, disposed between the first redistribution circuit structure and the semiconductor die, and having a plurality of openings exposing edges of the conductive terminals, wherein a bonding interface between the surface-modifying film and the protection layer comprises a Si—O—C bond, wherein a Si—O of the Si—O—C bond is included in the protection layer and a carbon of the Si—O—C bond bonded to the Si—O is included in the surface-modifying film.
2 . The package structure of claim 1 , further comprising:
an insulating encapsulation, laterally encapsulating the semiconductor die and exposing the conductive terminals,
wherein the surface-modifying film separates the first redistribution circuit structure from the insulating encapsulation, and a bonding interface between the surface-modifying film and the insulating encapsulation comprises a Si—O—C bond.
3 . The package structure of claim 2 , wherein a material of the insulating encapsulation is different from a material of the surface-modifying film.
4 . The package structure of claim 2 , wherein a material of the insulating encapsulation comprises a filler, and wherein a thickness of the surface-modifying film is ranging from 1 nm to 20 nm.
5 . The package structure of claim 2 , wherein a surface of the protection layer is substantially leveled with top surfaces of the conductive terminals exposed by the insulating encapsulation,
wherein the conductive terminals are free of the surface-modifying film.
6 . The package structure of claim 5 , wherein a material of the protection layer is different from a material of the surface-modifying film.
7 . The package structure of claim 2 , wherein:
the first redistribution circuit structure is further located over the insulating encapsulation, and the first redistribution circuit structure is separated from the insulating encapsulation through the surface-modifying film,
wherein the first redistribution circuit structure comprises:
a dielectric layer, located on the insulating encapsulation and the semiconductor die, and comprising a plurality of contact openings exposing the conductive terminals exposed by the insulating encapsulation; and
metallization features, located on the dielectric layer and further extend into the plurality of contact openings, wherein the metallization features are in contact with the conductive terminals exposed by the plurality of contact openings and the insulating encapsulation,
wherein a first surface of the surface-modifying film physically contacts to the dielectric layer, a second surface of the surface-modifying film physically contacts to the insulating encapsulation, and the first surface is opposite to the second surface along a stacking direction of the first redistribution circuit structure and the insulating encapsulation.
8 . The package structure of claim 7 , wherein a material of the dielectric layer is different from a material of the surface-modifying film and is different from a material of the insulating encapsulation.
9 . The package structure of claim 2 , further comprising:
a sealing element, embedded in the first redistribution circuit structure and electrically isolated from the semiconductor die,
wherein a positioning location of the sealing element is offset from a positioning location of the semiconductor die in a vertical projection along a stacking direction of the first redistribution circuit structure and the insulating encapsulation.
10 . A semiconductor device, comprising:
a package structure as claimed in claim 1 ; and
an interposer, comprising:
a core substrate, having conductive vias penetrating therethrough;
a second redistribution circuit structure, located on the core substrate and electrically coupled to the conductive vias, wherein the second redistribution circuit structure comprising a plurality of dielectric layers and a plurality of metallization layers arranged in alternation;
under-ball metallurgy patterns, located over a topmost layer of the dielectric layers, wherein the second redistribution circuit structure is located between the core substrate and the under-ball metallurgy patterns; and
another surface-modifying film, located between the topmost layer of the dielectric layers and another dielectric layer of the dielectric layers being immediately underlying the topmost layer of the dielectric layers, wherein a bonding interface between the another surface-modifying film and the another dielectric layer comprises a Si—O—C bond,
wherein the package structure is mounted on and electrically connected to the interposer through the under-ball metallurgy patterns.
11 . The semiconductor device of claim 10 , wherein a material of the topmost layer of the dielectric layers is different from a material of the another dielectric layer of the dielectric layers.
12 . A package structure, comprising:
a plurality of semiconductor dies, having conductive terminals and a protection layer covering sidewalls of the conductive terminals;
an insulating encapsulation, laterally encapsulating the plurality of semiconductor dies and exposing the conductive terminals; and
a surface-modifying film, disposed on the insulating encapsulation, wherein the surface-modifying film and the protection layer are bonded to each other through a Si—O—C bond, wherein a Si—O of the Si—O—C bond is included in the protection layer and a carbon of the Si—O—C bond bonded to the Si—O is included in the surface-modifying film.
13 . The package structure of claim 12 , wherein a material of the insulating encapsulation is different from a material of the surface-modifying film, and a bonding interface between the surface-modifying film and the insulating encapsulation comprises a Si—O—C bond.
14 . The package structure of claim 12 , further comprising:
a redistribution circuit structure, located over the insulating encapsulation and electrically connected to the plurality of semiconductor dies;
a plurality of conductive elements, located on the redistribution circuit structure, wherein the redistribution circuit structure is located between and electrically connected to the plurality of conductive elements and the plurality of semiconductor dies; and
a sealing element, embedded in the redistribution circuit structure and electrically isolated from the plurality of semiconductor dies, wherein the sealing element is in contact with the surface-modifying film.
15 . The package structure of claim 12 , further comprising:
a redistribution circuit structure, located over the insulating encapsulation and electrically connected to the plurality of semiconductor dies;
a plurality of conductive elements, located on the redistribution circuit structure, wherein the redistribution circuit structure is located between and electrically connected to the plurality of conductive elements and the plurality of semiconductor dies; and
a sealing element, embedded in the redistribution circuit structure and electrically isolated from the plurality of semiconductor dies, wherein the sealing element is free from the surface-modifying film.
16 . The package structure of claim 12 , wherein the plurality of semiconductor dies comprise a first semiconductor die and a second semiconductor die electrically connected thereto,
wherein one of the first semiconductor die and the second semiconductor die is a memory stack die and other one of the first semiconductor die and the second semiconductor die is a logic processor die.
17 . A method of manufacturing a package structure, comprising:
providing a semiconductor die having conductive terminals and a protection layer covering sidewalls of the conductive terminals;
forming a surface-modifying film on the semiconductor die to form a bonding interface having a Si—O—C bond between the protection layer and the surface-modifying film, wherein a Si—O of the Si—O—C bond is included in the protection layer and a carbon of the Si—O—C bond bonded to the Si—O is included in the surface-modifying film;
forming a first redistribution circuit structure over the semiconductor die and electrically connecting to the semiconductor die through the conductive terminals, edges of the conductive terminals being exposed by the plurality of openings formed in the surface-modifying film, wherein the first redistribution circuit structure is separated from the protection layer by the surface-modifying film, and the surface-modifying film is disposed between the first redistribution circuit structure and the semiconductor die; and
disposing conductive elements over the first redistribution circuit structure, wherein the first redistribution circuit structure is electrically coupled to and disposed between the conductive elements and the semiconductor die.
18 . The method of claim 17 , wherein forming the surface-modifying film on the semiconductor die comprises:
applying a surface-modifying solution composition over the semiconductor die, where the surface-modifying solution composition comprises a solvent and a first compound selected from the group consisting of a compound having a structure unit represented by chemical formula (1), a compound having a structure unit represented by chemical formula (2), a compound having a structure unit represented by chemical formula (3), a compound having a structure unit represented by chemical formula (4), a compound having a structure unit represented by chemical formula (5), and a compound having a structure unit represented by chemical formula (6),
wherein:
R 1 represents —CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
R 2 represents a hydrogen atom, —CH 3 or —CH 2 CH 3 ;
R 3 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
R 4 represents-CH 3 , —OCH 3 , —CH 2 CH 3 , —OCH 2 CH 3 or —CH 2 CH 2 NH 2 ;
X represents-(CH 2 )—, —(SO 2 )—, —(NH)—, —(NR 5 )—, a hydrogen atom, a substituted or unsubstituted alkyl chain having a linear-like structure, a branch-like structure, a comb-like structure or a star-like structure, a substituted or unsubstituted alkylene group, or an aromatic ring, wherein R 5 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
Y represents —(CH 2 )—, —(SO 2 )—, —(NH)—, —(NR 6 )—, a hydrogen atom, a substituted or unsubstituted alkyl chain having a linear-like structure, a branch-like structure, a comb-like structure or a star-like structure, a substituted or unsubstituted alkylene group, or an aromatic ring, wherein R 6 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
Z represents a hydrogen atom, —(COOR 7 ), —(R 8 —CH 3 ), or —((CH 2 ) n7 )—CH 3 , wherein R 7 represents —CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 , and R 8 represents (CH 2 )— or —(OCH 2 )—; and
n1, n2, n3, n4, n5, n6 and n7 independently are an integer of 1-10000;
performing a thermal treatment on the surface-modifying solution composition, wherein the surface-modifying solution composition and the protection layer of the semiconductor die are subjected to form a Si—O—C bond therebetween by dehydration so as to form the surface-modifying film on the protection layer; and
removing a part of the surface-modifying solution composition un-bonding to the protection layer by rinsing.
19 . The method of claim 17 , prior to forming the surface-modifying film on the semiconductor die and after providing the semiconductor die, further comprises:
laterally encapsulating the semiconductor die by an insulating encapsulation to expose the conductive terminals and the protection layer,
wherein forming the surface-modifying film on the semiconductor die to form the bonding interface having a Si—O—C bond between the protection layer and the surface-modifying film further comprises forming the surface-modifying film on the insulating encapsulation to form a bonding interface having a Si—O—C bond between the insulating encapsulation and the surface-modifying film, and comprises:
applying a surface-modifying solution composition over the insulating encapsulation and the semiconductor die, where the surface-modifying solution composition comprises a solvent and a first compound selected from the group consisting of a compound having a structure unit represented by chemical formula (1), a compound having a structure unit represented by chemical formula (2), a compound having a structure unit represented by chemical formula (3), a compound having a structure unit represented by chemical formula (4), a compound having a structure unit represented by chemical formula (5), and a compound having a structure unit represented by chemical formula (6),
wherein:
R 1 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
R 2 represents a hydrogen atom, —CH 3 or —CH 2 CH 3 ;
R 3 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
R 4 represents-CH 3 , —OCH 3 , —CH 2 CH 3 , —OCH 2 CH 3 or —CH 2 CH 2 NH 2 ;
X represents —(CH 2 )—, —(SO 2 )—, —(NH)—, —(NR 5 )—, a hydrogen atom, a substituted or unsubstituted alkyl chain having a linear-like structure, a branch-like structure, a comb-like structure or a star-like structure, a substituted or unsubstituted alkylene group, or an aromatic ring, wherein R 5 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
Y represents —(CH 2 )—, —(SO 2 )—, —(NH)—, —(NR 6 )—, a hydrogen atom, a substituted or unsubstituted alkyl chain having a linear-like structure, a branch-like structure, a comb-like structure or a star-like structure, a substituted or unsubstituted alkylene group, or an aromatic ring, wherein R 6 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 ;
Z represents a hydrogen atom, —(COOR 7 ), —(R 8 —CH 3 ), or —((CH 2 ) n7 )—CH 3 , wherein R 7 represents-CH 3 , —CH 2 CH 3 or —CH 2 CH 2 NH 2 , and R 8 represents —(CH 2 )— or —(OCH 2 )—; and
n1, n2, n3, n4, n5, n6 and n7 independently are an integer of 1-10000;
performing a thermal treatment on the surface-modifying solution composition, wherein the surface-modifying solution composition and the protection layer of the semiconductor die are subjected to form a Si—O—C bond therebetween by dehydration so as to form a part of the surface-modifying film on the protection layer, and the surface-modifying solution composition and the insulating encapsulation are subjected to form a Si—O—C bond therebetween by dehydration so as to form other part of the surface-modifying film on the insulating encapsulation; and
removing a part of the surface-modifying solution composition un-bonding to the insulating encapsulation and the protection layer by rinsing.
20 . A method of manufacturing a semiconductor device, comprising:
forming a package structure via a method as claimed in claim 17 ;
providing an interposer, comprising:
a core substrate, having conductive vias penetrating therethrough;
a second redistribution circuit structure, located on the core substrate and electrically coupled to the conductive vias, wherein the second redistribution circuit structure comprising a plurality of dielectric layers and a plurality of metallization layers arranged in alternation;
under-ball metallurgy patterns, located over a topmost layer of the dielectric layers, wherein the second redistribution circuit structure is located between the core substrate and the under-ball metallurgy patterns; and
another surface-modifying film, located between the topmost layer of the dielectric layers and another dielectric layer of the dielectric layers being immediately underlying the topmost layer of the dielectric layers, wherein a bonding interface between the another surface-modifying film and the another dielectric layer comprises a Si—O—C bond; and
mounting the package structure on the interposer through the under-ball metallurgy patterns and the conductive elements, the package structure electrically coupling to the interposer.