Semiconductor device
A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.
1 . A semiconductor device comprising:
a SiC semiconductor element mounted on a multilayer substate and an electrically conductive connection member; and
a sealant that seals the SiC semiconductor element and the electrically conductive connection member, containing:
a matrix resin containing an epoxy resin base material,
an inorganic filler and
an ultraviolet light absorbent,
wherein
the ultraviolet light absorbent is an organic material having an average particle size of 10 nm to 5000 nm, which absorbs 30% or more of ultraviolet light having a wavelength of 370 nm emitted from the SiC semiconductor element, and
the content of the ultraviolet light absorbent is 0.1 parts to 10 parts by mass relative to 100 parts by mass of the matrix resin, and
the content of the inorganic filler is 200 parts to 400 parts by mass, relative to 100 parts by mass of the matrix resin.
2 . The semiconductor device according to claim 1 , wherein the matrix resin further comprises a curing agent.
3 . The semiconductor device according to claim 2 , wherein and the ultraviolet light absorbent is uniformly dispersed in the sealant.
4 . The semiconductor device according to claim 2 ,
wherein the thermosetting resin sealing layer comprises: a first sealing layer covering surroundings of the SiC semiconductor element; and a second sealing layer covering the first sealing layer, and
wherein the first sealing layer comprises the epoxy resin base material, the curing agent, the inorganic filler, and the ultraviolet light absorbent.
5 . The semiconductor device according to claim 2 , wherein the sealant comprises: a primer layer covering the SiC semiconductor element and the electrically conductive connection member; and the thermosetting resin sealing layer covering the primer layer, and wherein the primer layer comprises an ultraviolet light absorbent.
6 . The semiconductor device according to claim 1 , wherein the ultraviolet light absorbent is one, two or more selected from the group consisting of benzotriazole derivatives, benzophenone derivatives, and triazine derivatives.
7 . The semiconductor device according to claim 5 , wherein the primer layer comprises one or more resins selected from the group consisting of polyamide resins, polyimide resins, and polyamide-imide resins.
8 . The semiconductor device according to claim 2 , wherein the ultraviolet light absorbent is one, two or more selected from the group consisting of benzotriazole derivatives, benzophenone derivatives, and triazine derivatives.
9 . The semiconductor device according to claim 4 , wherein the ultraviolet light absorbent is on, two or more selected from the group consisting of benzotriazole derivatives, benzophenone derivatives, and triazine derivatives.
10 . The semiconductor device according to claim 5 , wherein the ultraviolet light absorbent is one, two or more selected from the group consisting of benzotriazole derivatives, benzophenone derivatives, and triazine derivatives.
11 . The semiconductor device according to claim 3 , wherein the ultraviolet light absorbent is at least one compound selected from (a) to (d):
(a) benzotriazole derivative with no phenyl substituents;
(b) benzotriazole derivative represented by formula (1):
wherein,
R 1 and R 5 each independently represent H or OH,
R 2 and R 4 each independently represent H, OH, a linear or branched, saturated or unsaturated, monovalent hydrocarbon group with 1 to 6 carbon atoms, or a linear or branched, saturated, or unsaturated monovalent hydrocarbon group with 1 to 6 carbon atoms in which a hydrogen atom is substituted by a phenyl group,
R 3 represents H, OH, or a linear or branched, saturated alkoxy group with 1 to 10 carbon atoms,
R 6 and R 7 each independently represent H or Cl, and
one or two or more H atoms constructing substituents R 1 to R 7 is optionally substituted by Cl;
(c) benzophenone derivatives are represented by the following formula (2):
wherein,
R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , and R 17 are each independently selected from H, OH, and linear or branched, saturated or unsaturated, hydrocarbon groups with 1 to 3 carbon atoms,
one or more of R 11 to R 17 is selected from OH, linear or branched alkyl groups with 1 to 3 carbon atoms, and linear or branched, saturated or unsaturated, alkoxy groups with 1 to 3 carbon atoms, and
one or two or more H atoms forming these substituents is optionally substituted by Cl; and
(d) triazine derivative represented by formula (3):
wherein,
R 21 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , R 28 , and R 29 are each independently selected from H, OH, linear or branched alkoxy groups with 1 to 8 carbon atoms, and linear or branched alkyl groups with 1 to 3 carbon atoms, provided that one or more substituents of R 21 to R 29 are selected from OH, linear or branched alkoxy groups with 1 to 8 carbon atoms and linear or branched alkyl groups with 1 to 3 carbon atoms, and
one or two or more H atoms forming these substituents is optionally substituted by Cl.
12 . The semiconductor device according to claim 11 , wherein the at least one compound selected from (a) to (d) includes OH group.
13 . The semiconductor device according to claim 11 , wherein H at the 1- or 3-position of the benzotriazole derivative (a) is substituted by OH and H at the 5-or 6-position by a fluoromethyl group.
14 . The semiconductor device according to claim 11 , wherein (b) is selected from 2-(2-hydroxy-5-methylphenyl) benzotriazole, 2-(5-tert-butyl-2-hydroxyphenyl) benzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl) benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chloro-2H-benzotriazole, 2-(2-hydroxy-4-octoxyphenyl) benzotriazole, 2-(2H-benzotriazole-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl) phenol, 1-hydroxy-6-(trifluoromethyl) benzotriazole, and 2-[2-hydroxy-3,5-bis (a, a-dimethylbenzyl) phenyl]-2H-benzotriazole.
15 . The semiconductor device according to claim 11 , wherein (c) is selected from 2-hydroxy-4-methylbenzophenone, 2-hydroxy-4-methoxybenzophenone, 4-(allyloxy) benzophenone, and 2,2′-dihydroxy-4-methoxybenzophenone.
16 . The semiconductor device according to claim 11 , wherein (d) is selected from 2-(2,4-dihydroxyphenyl)-4,6-diphenyl-1,3,5-triazine, 2,4,6-tris (2,4-dihydroxyphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis (2,4-dimethylphenyl)-1,3,5-triazine, 2-(2-hydroxy-4-methoxyphenyl)-4,6-diphenyl-1,3,5-triazine, 2,4-bis(2,4-dimethylphenyl)-6-(2-hydroxy-4-n-octyloxyphenyl)-1,3,5-triazine, 2,4,6-tris (4-butoxy-2-hydroxyphenyl)-1,3,5-triazine, and 2,4-bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-bis-butoxyphenyl)-1,3,5-triazine.
17 . The semiconductor device according to claim 1 , wherein the ultraviolet light absorbent is at least one compound selected from (a) to (d):
(a) benzotriazole derivative with no phenyl substituents;
(b) benzotriazole derivative represented by formula (1):
wherein,
R 1 and R 5 each independently represent H or OH,
R 2 and R 4 each independently represent H, OH, a linear or branched, saturated or unsaturated, monovalent hydrocarbon group with 1 to 6 carbon atoms, or a linear or branched, saturated, or unsaturated monovalent hydrocarbon group with 1 to 6 carbon atoms in which a hydrogen atom is substituted by a phenyl group,
R 3 represents H, OH, or a linear or branched, saturated alkoxy group with 1 to 10 carbon atoms,
R 6 and R 7 each independently represent H or Cl, and
one or two or more H atoms constructing substituents R 1 to R 7 is optionally substituted by Cl;
(c) benzophenone derivatives are represented by the following formula (2):
wherein,
R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , and R 17 are each independently selected from H, OH, and linear or branched, saturated or unsaturated, hydrocarbon groups with 1 to 3 carbon atoms,
one or more of R 11 to R 17 is selected from OH, linear or branched alkyl groups with 1 to 3 carbon atoms, and linear or branched, saturated or unsaturated, alkoxy groups with 1 to 3 carbon atoms, and
one or two or more H atoms forming these substituents is optionally substituted by Cl; and
(d) triazine derivative represented by formula (3):
wherein,
R 21 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , R 28 , and R 29 are each independently selected from H, OH, linear or branched alkoxy groups with 1 to 8 carbon atoms, and linear or branched alkyl groups with 1 to 3 carbon atoms, provided that one or more substituents of R 21 to R 29 are selected from OH, linear or branched alkoxy groups with 1 to 8 carbon atoms and linear or branched alkyl groups with 1 to 3 carbon atoms, and
one or two or more H atoms forming these substituents is optionally substituted by Cl.