Power distribution for stacked electronic devices
A stacked electronic device is disclosed. The stacked electronic device can comprise a die stack including two or more connected dies, such as a lower die, an upper die, and a middle die between the lower die and the upper die. A plurality of through substrate vias (TSVs) can provide signal transmission to dies of the stack. A power supply path can be configured to provide power to the middle die without passing through the lower die. In some embodiments, external paths can provide power through an upper surface of a die in the stack while signals are supplied through the lower surface.
1 . An apparatus comprising:
a die stack comprising at least three connected dies, the at least three connected dies comprising a lower die, an upper die, and a middle die between the lower die and the upper die, wherein the at least three connected dies of the die stack are hybrid bonded to one another, wherein a hybrid bonded interface between two dies of the at least three connected dies comprises conductor-to-conductor direct bonds and dielectric-to-dielectric direct bonds;
a plurality of through substrate vias (TSVs) extending at least through the lower die and providing signal transmission to dies of the die stack; and
a power supply path configured to provide power to the middle die without passing through the lower die.
2 . The apparatus of claim 1 , wherein the lower die is mounted with its active side face down, the middle die is mounted with its active side face down over the lower die, and a backside of the lower die includes a power distribution network configured to distribute power from the power supply path to the middle die.
3 . The apparatus of claim 2 , further comprising a second power supply path to provide power to the upper die of the die stack from outside of the die stack, wherein a backside of the middle die comprises a second power distribution network for providing power to the upper die from the second power supply path to the upper die.
4 . The apparatus of claim 2 , wherein the power supply path comprises an edge trace along a sidewall of the die stack.
5 . The apparatus of claim 1 , wherein different voltages are provided for different dies of the die stack.
6 . The apparatus of claim 1 , wherein the die stack comprises multiple middle dies between the upper and lower dies, wherein separate power supply paths are provided for each of the middle dies.
7 . The apparatus of claim 6 , wherein the separate power supply paths supply different voltages to a die of the die stack without passing through the lower die.
8 . The apparatus of claim 1 , wherein the die stack comprises multiple middle dies, where separate power supply paths are provided for some of the middle dies without passing through the lower die, while internal power supply paths are provided for others of the middle dies.
9 . The apparatus of claim 1 , wherein the power supply path has a cross-sectional area more than 2 times an average cross-sectional area of the TSVs.
10 . The apparatus of claim 1 , wherein the die stack comprises differently sized dies.
11 . An apparatus comprising:
a plurality of stacked dies including signal through substrate vias (TSVs) extending through a lowest die in the plurality of stacked dies; and
a bond wire or an edge trace to provide power to one or more dies above the lowest die and below a highest die in the plurality of stacked dies without passing through the lowest die,
wherein the lowest die is hybrid bonded to the one or more dies, and wherein the one or more dies are hybrid bonded to one another, wherein a hybrid bonded interface between the lowest die and the one or more dies comprises conductor-to-conductor direct bonds and dielectric-to-dielectric direct bonds.
12 . The apparatus of claim 11 , wherein the plurality of stacked dies comprises a lower die, an upper die, and a middle die between the lower die and the upper die, the bond wire or edge trace providing power to the middle die by way of a power distribution network on a back side of the lower die.
13 . The apparatus of claim 11 , wherein the edge trace provides power to the one or more dies above the lowest die in the stack and below the highest die in the stack, wherein the edge trace comprises a cured conductive paste or a plated metal.
14 . A die stack comprising:
a plurality of stacked dies wherein at least a bottom die of the plurality of stacked dies includes signal through substrate vias (TSVs) extending at least through a substrate portion of the bottom die; and
an external power supply path providing power to at least one die of the die stack without passing through the bottom die, wherein the at least one die comprises a middle die,
wherein the plurality of stacked dies are connected to one another by direct hybrid bonding, and wherein a hybrid bonded interface between two dies of the plurality of stacked dies comprises conductor-to-conductor direct bonds and dielectric-to-dielectric direct bonds.
15 . The die stack of claim 14 , wherein the external power supply path provides power to the bottom die by way of an upper surface of the bottom die.
16 . The die stack of claim 14 , further comprising a routing structure between the bottom die and an overlying die of the plurality of stacked dies that overlies the bottom die, wherein the external power supply path physically and electrically connects to the routing structure.
17 . The die stack of claim 16 , wherein the external power supply path comprises a bond wire.
18 . The die stack of claim 16 , wherein the external power supply path comprises an edge trace.
19 . The die stack of claim 14 , wherein a lower surface of the bottom die is attached to a carrier.
20 . The die stack of claim 14 , wherein direct bonding among the plurality of stacked dies of the die stack is conducted through routing structures including power distribution networks.