Micro light emitting diode structures for efficient communication of an optical signal

1 . A device comprising:

a substrate structure;

a micro light emitter diode (uLED) structure extending vertically from the substrate structure, the uLED structure comprising:

a first body of a doped first semiconductor material, wherein the first body forms a pyramidal structure with semipolar planes of the doped first semiconductor material;

a second body of an undoped second semiconductor material; and

a third body of a doped third semiconductor material, wherein the undoped second semiconductor material is a narrower band gap material, relative to the doped first semiconductor material, and relative to the doped third semiconductor material; and

a dielectric structure which adjoins each of the first body, the second body, and the third body;

wherein:

the first body, the second body, and the third body are arranged in a vertically stacked configuration wherein the second body is between the first body and the third body;

a first vertical sidewall structure of the first body extends vertically to each of the substrate structure and the pyramidal structure;

a second vertical sidewall structure of the dielectric structure extends to a location where the first vertical sidewall structure adjoins a closest portion of the second body to the substrate structure; and

the second vertical sidewall structure extends vertically past both a first maximum vertical extent of the first body and a second maximum vertical extent of the second body.

2 . The device of claim 1 , wherein a first horizontal footprint of the first body completely overlaps a second horizontal footprint of the second body.

3 . The device of claim 1 , wherein the pyramidal structure is a truncated pyramid structure.

4 . The device of claim 1 , wherein a thickness of the second body, in a direction which is orthogonal to a facet of the pyramidal structure, varies along the facet.

5 . The device of claim 1 , wherein:

the uLED structure is a first uLED structure;

the device comprises an array of multiple uLED structures which extend vertically from the substrate structure, the multiple uLED structures comprising the first uLED structure; and

an arrangement of the multiple uLED structures conforms to an arrangement of hexagonal tiles in a regular tessellation pattern.

6 . The device of claim 1 , further comprising integrated circuitry coupled to the uLED structure, wherein the integrated circuitry is to selectively operate the uLED structure, at different times, in either one of:

a first mode to transmit an optical signal with the uLED structure; or

a second mode to receive an optical signal with the uLED structure.

7 . The device of claim 1 , wherein:

the uLED structure is a first uLED structure;

the device comprises an array of multiple uLED structures which extend vertically from the substrate structure, the multiple uLED structures comprising the first uLED structure; and

the device further comprises a layer of a transparent conductive material which extends over the uLED structure.

8 . The device of claim 7 , wherein:

the device further comprises a material layer comprising quantum dots;

the material layer extends over the layer of the transparent conductive material; and

the material layer is to:

communicate a first optical signal with the uLED structure via a first side of the material layer; and

communicate a second optical signal via a second side of the layer of the material layer;

the first side is opposite the second side;

one of the first optical signal or the second optical signal is based on the other of the first optical signal or the second optical signal; and

a first wavelength of the first optical signal is different than a second wavelength of the second optical signal.

9 . A system comprising:

integrated circuitry;

a substrate structure;

an array of multiple micro light emitter diode (uLED) structures extending vertically from the substrate structure, the multiple uLED structures comprising a first uLED structure coupled to the integrated circuitry, the first uLED structure comprising:

a first body of a doped first semiconductor material, wherein the first body forms a pyramidal structure with semipolar planes of the doped first semiconductor material;

a second body of an undoped second semiconductor material; and

a third body of a doped third semiconductor material, wherein the undoped second semiconductor material is a narrower band gap material, relative to the doped first semiconductor material, and relative to the doped third semiconductor material; and

a dielectric structure which adjoins each of the first body, the second body, and the third body;

wherein:

the first body, the second body, and the third body are arranged in a vertically stacked configuration wherein the second body is between the first body and the third body;

a first vertical sidewall structure of the first body extends vertically to each of the substrate structure and the pyramidal structure;

a second vertical sidewall structure of the dielectric structure extends to a location where the first vertical sidewall structure adjoins a closest portion of the second body to the substrate structure;

the second vertical sidewall structure extends vertically past both a first maximum vertical extent of the first body and a second maximum vertical extent of the second body; and

the integrated circuitry is to communicate a signal with the array.

10 . The system of claim 9 , wherein a first thickness of the second body, in a direction which is orthogonal to a facet of the pyramidal structure, varies along the facet.

11 . The system of claim 9 , wherein an arrangement of the multiple uLED structures conforms to an arrangement of hexagonal tiles in a regular tessellation pattern.

12 . The system of claim 9 , wherein the integrated circuitry is to selectively operate the first uLED structure, at different times, in either one of:

a first mode to transmit an optical signal with the first uLED structure; or

a second mode to receive an optical signal with the first uLED structure.

13 . The system of claim 9 , further comprising a layer of a transparent conductive material which extends over the first uLED structure.

14 . The system of claim 13 , further comprising a material layer comprising quantum dots, wherein:

the material layer extends over the layer of the transparent conductive material; and

the material layer is to:

communicate a first optical signal with the array via a first side of the material layer; and

communicate a second optical signal via a second side of the layer of the material layer;

the first side is opposite the second side;

one of the first optical signal or the second optical signal is based on the other of the first optical signal or the second optical signal; and

a first wavelength of the first optical signal is different than a second wavelength of the second optical signal.