IP Library Granted Patent US 12702073
Granted Patent B2
US 12702073 · App. 18/526,653 · Granted Aug 4, 2026

Power architecture with dual core advance substrate

Inventors: Mudit Sunilkumar Khasgiwala (Milpitas, CA); Subramani Kengeri (Saratoga, CA); Meghna Maheshkumar Patel (Navsari, IN); Tameesh Suri (San Jose, CA)
Assignee: Applied Materials, Inc.
H10W90/00H05K1/185H10W44/20H10W70/635H10W90/401H10W44/212H10W44/243H10W70/695H10W70/698H10W90/724
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Quick Facts
Patent No.
US 12702073
App. No.
18/526,653
Granted
Aug 4, 2026
Kind
B2
Abstract

An electronic device may include a printed circuit board. The electronic device may include a first core with a first cavity, the first core formed from an organic material, and the first cavity configured to house a DC capacitor for delivery of direct current to a die from a voltage source. The device may include a second core with a second cavity, the second core formed from an inorganic material and the second cavity configured to house an AC capacitor coupled to an output of the die for decoupling alternating current effects associated with the direct current. The device may include an interposer layer disposed between the first core and the second core, configured to isolate the first core and the second core.

Claims (32)

1 . An electronic device, comprising:

a printed circuit board;

a first core disposed on the printed circuit board, the first core being formed from an organic material comprising a first cavity;

a second core disposed on the first core, the second core being formed from an inorganic material comprising a second cavity;

a first electronic device disposed within the first cavity, the first electronic device providing a direct current to a die; and

a second electronic device disposed within the second cavity, the second electronic device decoupling effects from the direct current.

2 . The electronic device of claim 1 , wherein the first electronic device comprises an integrated passive device.

3 . The electronic device of claim 2 , wherein the integrated passive device is a deep trench capacitor or an inductor.

4 . The electronic device of claim 1 , wherein the second electronic device comprises an integrated passive device.

5 . The electronic device of claim 4 , wherein the integrated passive device is a capacitor.

6 . The electronic device of claim 1 , wherein the first core comprises a direct current domain for providing direct current to the die.

7 . The electronic device of claim 1 , wherein the second core comprises an alternating current domain for providing an alternating current to the die.

8 . The electronic device of claim 1 , wherein an integrated voltage regulator provides a current to the die, wherein the first electronic device within the first core modulates the current provided to the die.

9 . The electronic device of claim 1 , wherein the first core is configured to house components associated with a DC domain and the second core is configured to house components associated with an AC domain.

10 . An electronic device, comprising:

a printed circuit board;

a first core comprising a first cavity, the first core formed from an organic material and the first cavity configured to house a DC capacitor for delivery of direct current to a die from a voltage source;

a second core comprising a second cavity, the second core formed from an inorganic material and the second cavity configured to house an AC capacitor coupled to an output of the die for decoupling alternating current effects associated with the direct current; and

an interposer layer disposed between the first core and the second core, configured to isolate the first core and the second core.

11 . The electronic device of claim 10 , wherein the inorganic material comprises at least one of glass and silicon.

12 . The electronic device of claim 10 , wherein the DC capacitor is a Bryce capacitor.

13 . The electronic device of claim 10 , wherein the organic material and the inorganic material are selected based at least in part on a coefficient of thermal expansion (CTE) associated with each of the organic material and the inorganic material.

14 . The electronic device of claim 10 , wherein the DC capacitor and the AC capacitor are embedded within a through substrate via (TSV), the TSV extending through the first core and the second core.

15 . An electronic device, comprising:

a voltage source for providing direct current power to a die;

a first core formed from an organic material and comprising a first capacitor, the first capacitor delivering the direct current power to the die, and the first core isolating a DC domain of the electronic device; and

a second core formed from an inorganic material and comprising a second capacitor, the second capacitor decoupling alternating current interference from an output of a die, and the second core isolating an AC domain of the electronic device.

16 . The electronic device of claim 15 , wherein the second core comprises four layers of at least one of glass and silicon.

17 . The electronic device of claim 15 , wherein first core comprises between about 12 and about 16 layers of organic material.

18 . The electronic device of claim 15 , wherein a location of the die and a location of the voltage source is based at least in part on a voltage drop versus an alternating current frequency response, such that a power delivery network is optimized.

19 . The electronic device of claim 15 , wherein the second capacitor comprises a tunable capacitor, configured to be adjusted to alter a frequency response of the electronic device.

20 . The electronic device of claim 15 , further comprising a through substrate via (TSV), the TSV comprising a switching inductor.