IP Library Granted Patent US 12702079
Granted Patent B2
US 12702079 · App. 18/367,478 · Granted Aug 4, 2026

Fan-out system-level packaging structure and packaging method

Inventors: Yenheng Chen (Jiangyin City, CN); Chengchung Lin (Jiangyin City, CN)
Assignee: SJ Semiconductor(Jiangyin) Corporation
H10W90/701H10W70/05H10W70/093H10W70/611H10W70/65H10W70/685H10W90/00H10W74/00H10W74/15H10W90/724H10W90/734
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Quick Facts
Patent No.
US 12702079
App. No.
18/367,478
Granted
Aug 4, 2026
Kind
B2
Abstract

A method of fabricating a fan-out system-level package and structure are disclosed. The method comprises: forming a first rewiring layer over a supporting substrate; electrically connecting a connecting bridge to the first rewiring layer; forming an encapsulation layer over the first rewiring layer and the connecting bridge; forming a second rewiring layer over the encapsulation layer, and electrically connected to the connecting bridge; removing the supporting substrate, and disposing conductive blocks on a side of the first rewiring layer facing away from the encapsulation layer; electrically connecting first function chips and components to a side of the second rewiring layer facing away from the encapsulation layer; forming a cooling cover over the second rewiring layer, leaving a cavity between the cooling cover and the second rewiring layer to house the first function chips and the components; and connecting the conductive blocks to a packaging wafer.

Claims (17)

1 . A method of fabricating a fan-out system-level package, comprising steps of:

step 1: forming a first rewiring layer over a supporting substrate;

step 2: forming a connecting bridge, wherein a bottom surface of the connecting bridge is configured to electrically connect to the first rewiring layer;

step 3: forming an encapsulation layer over the first rewiring layer, wherein the encapsulation layer covers a top surface of the connecting bridge, and thinning the encapsulation layer until the top surface of the connecting bridge is exposed;

step 4: forming a second rewiring layer over the encapsulation layer, wherein the second rewiring layer is configured to electrically connect to the connecting bridge;

step 5: removing the supporting substrate, and disposing conductive blocks on a side of the first rewiring layer facing away from the encapsulation layer, wherein the conductive blocks are electrically connected to the first rewiring layer;

step 6: electrically connecting first function chips and components to a side of the second rewiring layer facing away from the encapsulation layer, respectively;

step 7: forming a cooling cover over the second rewiring layer, wherein a cavity is configured to be between the cooling cover and the second rewiring layer, wherein the first function chips and the components are disposed in the cavity; and

step 8: connecting the conductive blocks to a packaging wafer.

2 . The method according to claim 1 , further comprising, before step 3:

forming conductive posts at predetermined locations on the first rewiring layer, wherein the conductive posts are electrically connected to the first rewiring layer, wherein the conductive posts are spaced apart from the connecting bridge, wherein the conductive posts are embedded in the encapsulation layer first, and top surfaces of the conductive posts are exposes from the thinned encapsulation layer after step 3, also, and wherein the conductive posts are also electrically connected to the second rewiring layer.

3 . The method according to claim 1 , further comprising forming the connecting bridge by first drilling through-holes in an inorganic layer and filling the through-holes with a conductive metal material, wherein the connecting bridge comprises an inorganic perforated structure, and wherein the inorganic layer comprises a silicon substrate.

4 . The method according to claim 1 , wherein the connecting bridge comprises an organic perforated structure, formed by drilling through-holes in an organic layer and filling the through-holes with a conductive metal material.

5 . The method according to claim 1 , wherein the conductive blocks comprise solder balls or conductive inserts.

6 . The method according to claim 1 , further comprising:

after step 6 and before step 8, connecting second function chips to the conductive blocks; and

after step 8, connecting the packaging wafer and the conductive blocks with a connector, wherein the second function chips are spaced apart from the connector.