Composite body comprising silicon carbide and method for producing same
There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiO x formed on the surface and a second base material which has an oxide layer MO y with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MO y side faces the SiO x side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O-M bonds, the second base material is bonded to the first base material.
1 . A silicon carbide composite body, comprising:
a first base material including a single crystal silicon carbide or a polycrystalline silicon carbide on at least a part of an upper surface; and
a second base material including an element M which is one or more of metal elements (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, C in diamond, and C in silicon carbide on at least a part of a lower surface,
wherein the bonding interface between the upper surface of the first base material, which is the (000-1) plane of the single crystal silicon carbide, and the lower surface of the second base material includes C—O-M bondings between at least some of C of the (000-1) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material.
2 . The silicon carbide composite body according to claim 1 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.
3 . A silicon carbide composite body, comprising:
a first base material including a single crystal silicon carbide or a polycrystalline silicon carbide on at least a part of an upper surface; and
a second base material including an element M which is one or more of metal elements (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, C in diamond, and C in silicon carbide on at least a part of a lower surface,
wherein the bonding interface between the upper surface of the first base material, which is the (0001) plane of the single crystal silicon carbide, and the lower surface of the second base material includes Si—O-M bondings between at least some of Si of the (0001) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material.
4 . The silicon carbide composite body according to claim 3 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.
5 . A silicon carbide composite body, comprising:
a first base material including a single crystal silicon carbide or a polycrystalline silicon carbide on at least a part of an upper surface;
an intermediate layer composed of a silicon carbide oxide and having a thickness of 2.6 nm or less;
a second base material including an element M which is one or more of metal elements (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, C in diamond, and C in silicon carbide on at least a part of a lower surface,
wherein the upper surface of the first base material and the lower surface of the second base material are bonded via the intermediate layer, and the intermediate layer includes C—O-M bondings between at least some of C of the (000-1) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material or Si—O-M bondings between at least some of Si of the (0001) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material.
6 . The silicon carbide composite body according to claim 5 ,
wherein the thickness of the intermediate layer is 1.3 nm or less.
7 . The silicon carbide composite body according to claim 6 ,
wherein the thickness of the intermediate layer is 0.6 nm or more.
8 . The silicon carbide composite body according to claim 6 ,
wherein the silicon carbide on the upper surface of the first base material is a polycrystalline silicon carbide.
9 . The silicon carbide composite body according to claim 6 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.
10 . The silicon carbide composite body according to claim 5 ,
wherein the thickness of the intermediate layer is 0.6 nm or more.
11 . The silicon carbide composite body according to claim 10 ,
wherein the silicon carbide on the upper surface of the first base material is a polycrystalline silicon carbide.
12 . The silicon carbide composite body according to claim 10 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.
13 . The silicon carbide composite body according to claim 5 ,
wherein the silicon carbide on the upper surface of the first base material is a polycrystalline silicon carbide.
14 . The silicon carbide composite body according to claim 13 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.
15 . The silicon carbide composite body according to claim 5 ,
wherein the shear strength between the first base material and the second base material is 0.1 MPa or more.