Semiconductor module and life prediction system for semiconductor module
An object of the invention is to provide the semiconductor module which can predict a life precisely, and the life prediction system for the semiconductor module. The semiconductor module according to the present invention includes IGBTs, diodes, measurement circuits for measuring characteristics of the IGBTs and the diodes, and a memory for storing initial values of predetermined characteristics of the IGBTs and the diodes, measured values of characteristics of the IGBTs and the diodes measured by measurement circuits, and a predetermined determination value for characteristic degradation of the IGBTs and the diodes.
1 . A life prediction system for the semiconductor module, comprising:
a semiconductor module including:
at least one semiconductor element;
a memory configured to store respective case temperatures when the semiconductor element is in operation and when the semiconductor element is not in operation, and a determination value of predetermined characteristic degradation of the semiconductor element; and
a prediction unit configured to predict a life of the semiconductor module,
wherein
the prediction unit is configured to predict the life of the semiconductor module based on each of the case temperatures and the determination value stored in the memory,
the memory is configured to store a first case temperature at a first timing when the semiconductor element is not in operation, a second case temperature at the first timing when the semiconductor element is in operation, a third case temperature at a second timing, which is different from the first timing, when the semiconductor element is not in operation, and a fourth case temperature at the second timing when the semiconductor element is in operation, and
the prediction unit is configured to determine that the characteristic of the semiconductor element has been degraded when a difference between a difference between the first case temperature and the second case temperature and a difference between the third case temperature and the fourth case temperature has become equal to or more than the determination value, and predict that the life of the semiconductor module has been shortened.