Electronic device, electronic device manufacturing apparatus, and method for manufacturing electronic device
According to one embodiment, an electronic device includes a housing, a first member, an electronic element, a getter member, and a second member. The housing includes a first portion. A first gap is provided between the first portion and the first member. A space surrounded by the housing and the first member is sealed at 1 atmospheric pressure or less. The electronic element is provided in the space. The getter member is provided in the space and fixed to the first member. The second member is fixed to the first member. At least a part of the first member is provided between the getter member and the second member. A melting point of the second member is lower than a melting point of the first member.
1 . An electronic device, comprising:
a housing including a first portion;
a first member, a first gap being provided between the first portion and the first member, a space surrounded by the housing and the first member being sealed at 1 atmospheric pressure or less;
an electronic element provided in the space;
a getter member provided in the space and fixed to the first member; and
a second member fixed to the first member, at least a part of the first member being provided between the getter member and the second member, a melting point of the second member being lower than a melting point of the first member,
wherein
the second member includes solder,
the first member includes iron, nickel and cobalt,
a concentration of nickel in the first member is not less than 28 atomic % and not more than 30 atomic %, and
a concentration of cobalt in the first member is not less than 15 atomic % and not more than 19 atomic %.
2 . The device according to claim 1 , wherein
the second member is in contact with the first member.
3 . The device according to claim 1 , wherein
the getter member is in contact with the first member.
4 . The device according to claim 1 , wherein
the melting point of the second member is not less than 150° C. and not more than 500° C., and
the melting point of the first member is more than 500° C. and not more than 1600° C.
5 . The device according to claim 1 , wherein
the first member further includes at least one selected from the group consisting of silicon and manganese.
6 . The device according to claim 1 , wherein
at least a part of the getter member is located between the electronic element and the second member in a first direction from the getter member to the second member.
7 . The device according to claim 1 , wherein
the getter member includes a first face facing the first member,
the second member includes a second face facing the first member, and
a first area of the first face is not less than 0.5 times and not more than 2 times a second area of the second face.
8 . The device according to claim 1 , wherein
the getter member includes a first face facing the first member,
the first face includes an overlapping region overlapping the second member in a first direction from the getter member to the second member, and
an area of the overlapping region is not less than 0.5 times and not more than 1 time a first area of the first face.
9 . The device according to claim 1 , wherein
the getter member includes at least one selected from the group consisting of titanium, zirconium, vanadium, iron, cobalt, aluminum and rare earth elements.
10 . The device according to claim 1 , wherein
the first portion includes a first outer edge,
the housing includes a side portion provided along the first outer edge and connected to the first portion,
the first member includes a second outer edge connected to the side, and
the space is surrounded by the first portion, the side portion and the first member.
11 . The device according to claim 1 , wherein
the electronic element includes
a base,
a support portion fixed to the base, and
a movable portion supported by the support portion,
a second gap is provided between the base and the movable portion.
12 . The device according to claim 1 , wherein
a pressure of the space is 1 Pa or less.
13 . An electronic device, comprising:
a housing including a first portion;
a first member, a first gap being provided between the first portion and the first member, a space surrounded by the housing and the first member being sealed at 1 atmospheric pressure or less;
an electronic element provided in the space;
a getter member provided in the space and fixed to the first member; and
a second member fixed to the first member, at least a part of the first member being provided between the getter member and the second member, a melting point of the second member being lower than a melting point of the first member
wherein
the getter member includes a first region and a second region,
a direction from the first region to the second region is along a second direction crossing a first direction from the getter member to the second member,
the first region includes a center of the getter member on a plane crossing the first direction,
the second region includes an outer edge of the getter member in the plane, and
a concentration of nitrogen in the first region is higher than a concentration of nitrogen in the second region, or the second region does not include nitrogen.
14 . A method for manufacturing an electronic device, the method comprising:
preparing an electronic device component, the electronic device component including:
a housing including a first portion,
a first member, a first gap being provided between the first portion and the first member, a space surrounded by the housing and the first member being sealed at 1 atmospheric pressure or less,
an electronic element provided in the space,
a getter member provided in the space and fixed to the first member, and
a second member fixed to the first member, at least a part of the first member being provided between the getter member and the second member, a melting point of the second member being lower than a melting point of the first member; and
heating the second member to the melting point of the second member, or more.