Micromechanical z-acceleration sensor with reference electrode
A micromechanical capacitive z-acceleration sensor. The sensor includes a substrate with a main extension plane and a layer sequence which is parallel to the extension plane, and includes a first polysilicon layer, a second polysilicon layer, and a third polysilicon layer, with a movable micromechanical structure having a seismic mass which can be deflected in a straight line in a first direction perpendicular to the extension plane. The movable micromechanical structure is formed in the second polysilicon layer and the third polysilicon layer. A measuring capacitance is formed between the seismic mass and a measuring electrode formed in the first polysilicon layer. A reference capacitance is formed between lower and upper reference electrodes, which are formed in the first and polysilicon layers, respectively. As viewed in the first direction, the movable micromechanical structure at least partially overlaps the upper reference electrode.
1 . A micromechanical capacitive z-acceleration sensor, comprising:
a substrate with a main extension plane, and a layer sequence which is parallel to the extension plane and includes a first polysilicon layer above the substrate, a second polysilicon layer above the first polysilicon layer, and a third polysilicon layer above the second polysilicon layer;
a movable micromechanical structure having a seismic mass which can be deflected in a straight line in a first direction perpendicular to the extension plane, the movable micromechanical structure being formed in the second polysilicon layer and the third polysilicon layer;
a measuring capacitance formed between the seismic mass and a measuring electrode, the measuring electrode being formed in the first polysilicon layer;
wherein a reference capacitance is formed between a lower reference electrode and an upper reference electrode, the lower reference electrode being formed in the first polysilicon layer, and the upper reference electrode being formed in the second polysilicon layer;
wherein, as viewed in the first direction, the movable micromechanical structure at least partially overlaps the upper reference electrode.
2 . The micromechanical capacitive z-acceleration sensor according to claim 1 , wherein the movable micromechanical structure is anchored to the substrate using at least one anchoring.
3 . The micromechanical capacitive z-acceleration sensor according to claim 2 , wherein the at least one anchoring includes four anchorings.
4 . The micromechanical capacitive z-acceleration sensor according to claim 2 , wherein the upper reference electrode is suspended from the anchoring.
5 . The micromechanical capacitive z-acceleration sensor according to claim 2 , wherein the movable micromechanical structure has at least one suspension spring, and the seismic mass is suspended from the anchoring using the suspension spring.
6 . The micromechanical capacitive z-acceleration sensor according to claim 5 , wherein the movable micromechanical structure, as viewed in the first direction, has a centroid of area, and the anchoring is arranged closer to the centroid of area than is the suspension spring.
7 . The micromechanical capacitive z-acceleration sensor according to claim 5 , wherein, as viewed in the first direction, the seismic mass at least partially overlaps the upper reference electrode.
8 . The micromechanical capacitive z-acceleration sensor according to claim 5 , wherein, as viewed in the first direction, the suspension spring and the upper reference electrode overlap at least partially.
9 . The micromechanical capacitive z-acceleration sensor according to claim 5 , wherein the seismic mass can be deflected in a second direction parallel to the extension plane and/or in a third direction parallel to the extension plane and has electrode fingers for detecting a deflection in the first and/or second direction.
10 . The micromechanical capacitive z-acceleration sensor according to claim 9 , wherein, as viewed in the first direction, the electrode fingers and the upper reference electrode overlap at least partially.