Method of performing selective etch on array substrate
A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.
1 . A method of performing a selective etch on an array substrate, wherein the array substrate has a substrate and a component layer disposed on the substrate, wherein the method comprises:
mixing deionized water, hydrogen peroxide, and an acid to prepare a first solution, wherein the first solution consists of deionized water, hydrogen peroxide, and the acid, wherein the acid is sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof;
adding an alkoxy silane compound to the first solution to prepare a second solution;
placing the array substrate into the second solution to remove the component layer, and forming an aging second solution; and
taking out the substrate from the aging second solution,
wherein a material of the substrate is glass,
wherein the alkoxy silane compound forms a protective layer on the substrate to prevent the substrate from being etched by the acid during the step of removing the component layer,
wherein in the second solution, a ratio of the deionized water, the hydrogen peroxide, and the acid is 1:1:0.5 to 0.2:0.5:1.
2 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein in preparing the first solution, the deionized water, the hydrogen peroxide, and the acid are mixed by ultrasonic vibration.
3 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein a concentration of the alkoxy silane compound in the second solution is 20 g/l to 120 g/l.
4 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein in preparing the second solution, the first solution and the alkoxy silane compound are mixed by ultrasonic vibration at a temperature of 40° C. to 95° C. and during a time period of 0.5 hour to 2 hours.
5 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein the alkoxy silane compound is a compound represented by Formula 1:
wherein R is hydrogen, alkyl, alkoxy, phenyl, epoxy or a combination thereof, m is a positive integer from 1 to 3, and n is 0 or a positive integer.
6 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein in removing the component layer, the second solution is reacted with the array substrate by ultrasonic vibration at a temperature of 40° C. to 95° C. and during a time period of 0.5 hour to 48 hours.
7 . The method of performing the selective etch on the array substrate as claimed in claim 1 , wherein after taking out the substrate from the aging second solution, the method further comprises the following steps:
adding an ion adsorbent to the aging second solution to prepare a third solution, wherein a concentration of the ion adsorbent in the third solution is 10 g/l to 100 g/l;
removing the ion adsorbent from the third solution to prepare a fourth solution; and
adding the deionized water, the hydrogen peroxide, and the acid or a combination thereof to the fourth solution to prepare the second solution.
8 . The method of performing the selective etch on the array substrate as claimed in claim 7 , wherein in preparing the third solution, the aging second solution and the ion adsorbent are mixed by ultrasonic vibration at a room temperature and during a time period of 0.5 hour to 48 hours.