Compositions for manufacturing thin film and methods for manufacturing semiconductor device using the same
Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X 1 and X 2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R 1 and R 2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R 3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.
1 . A composition for manufacturing a thin film, the composition comprising a compound having a structure of Chemical Formula 1:
wherein M is strontium (Sr) or barium (Ba),
X 1 and X 2 are each independently oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms,
R 1 and R 2 are each independently a perfluoro alkyl group having 1 to 5 carbon atoms,
wherein R 1 and R 2 are different from each other,
R 3 is hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms,
L is a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms and 1 to 6 nitrogen atoms, and
n is an integer of 1 to 6.
2 . The composition according to claim 1 , wherein L has a structure of Chemical Formula 2:
wherein R 6 and R 7 are each independently a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a sec-butyl group, or a substituted or unsubstituted perfluoroalkyl group having 1 to 4 carbon atoms, and
wherein X is an integer of 1 to 5.
3 . The composition according to claim 2 , wherein L includes at least one of diglyme and tetraethylene glycol dimethyl ether (tetraglyme).
4 . The composition according to claim 1 , wherein L includes at least one of TMEDA (tetramethlyethlyenediamine) and HMTETA (hexamethyltriethylenetriamine).
5 . The composition according to claim 1 , wherein X 1 and X 2 are the same.
6 . The composition according to claim 1 , wherein X 1 and X 2 are different from each other.
7 . The composition according to claim 1 , wherein the compound having the structure of Chemical Formula 1 is in a liquid state at room temperature.
8 . The composition according to claim 1 , wherein a melting point of the compound having the structure of Chemical Formula 1 is 60° C. or lower.
9 . A method for manufacturing a semiconductor device, the method comprising:
providing a substrate including an active region;
forming a lower electrode on the substrate so as to be connected to the active region; and
forming a capacitor dielectric film disposed along a profile of the lower electrode,
wherein forming the capacitor dielectric film includes sequentially providing a composition for manufacturing a thin film, and a metal,
wherein the composition for manufacturing the thin film includes a compound having a structure of Chemical Formula 1:
wherein M is strontium (Sr) or barium (Ba),
X 1 and X 2 are each independently oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms,
R 1 and R 2 are each independently a perfluoro alkyl group having 1 to 5 carbon atoms, wherein R 1 and R 2 are different from each other,
R 3 is hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms,
L is a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms and 1 to 6 nitrogen atoms, and
n is an integer of 1 to 6.
10 . The method according to claim 9 , wherein the capacitor dielectric film includes at least one of SrTiO 3 , BaTiO 3 , or SrBaTi 2 O 6 .
11 . The method according to claim 9 , wherein the compound having the structure of Chemical Formula 1 is in a liquid state at room temperature.
12 . The method according to claim 9 , wherein L has a structure of Chemical Formula 2:
wherein R 6 and R 7 are each independently a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a sec-butyl group, or a substituted or unsubstituted perfluoroalkyl group having 1 to 4 carbon atoms, and
wherein X is an integer of 1 to 5.
13 . The method according to claim 9 , wherein L includes at least one of diglyme and tetraethylene glycol dimethyl ether (tetraglyme).
14 . The method according to claim 9 , wherein L includes at least one of TMEDA (tetramethlyethlyenediamine) and HMTETA (hexamethyltriethylenetriamine).
15 . The method according to claim 9 , wherein X 1 and X 2 are the same.