Etchant composition, a pattern formation method and a manufacturing method of array substrate using the etchant composition

1 . An etchant composition containing: (A) an alkaline compound; (B) an organoaluminum; and (C) water, wherein the organoaluminum (B) comprises a compound represented by the following Formula 1:

wherein R 1 to R 3 are each independently an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 30 carbon atoms, wherein the alkyl group having 1 to 5 carbon atoms is unsubstituted or substituted with one or more of an amine group, an aniline group, a quinol group, hydrogen, silicon, and halogens.

2 . The etchant composition of claim 1 , wherein the organoaluminum (B) is methylaluminoxane.

3 . The etchant composition of claim 1 , containing, based on 100 wt % of the total weight of the etchant composition:

0.1 to 80 wt % of the alkaline compound (A);

0.001 to 20 wt % of the organoaluminum (B); and

a balance of water (C).

4 . The etchant composition of claim 1 , wherein the etchant composition has a pH of 12 or higher.

5 . The etchant composition of claim 1 , wherein the alkaline compound (A) comprises a hydroxide in a form bonded with an inorganic or organic cation.

6 . The etchant composition of claim 1 , wherein the alkaline compound is a compound represented by following Formula 2:

wherein R 8 to R 11 are each independently a hydrocarbon group having 1 to 8 carbon atoms.

7 . The etchant composition of claim 6 , wherein the compound represented by Formula 2 is at least one from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, benzyltriethylammonium hydroxide, diethyldimethylammonium hydroxide, and methyltributylammonium hydroxide.

8 . A method for forming a pattern, the method comprising steps of:

forming a silicon layer on a substrate; and

etching the silicon layer using the etchant composition of claim 1 .

9 . The method of claim 8 , further comprising a step of forming a silicon oxide layer, wherein the silicon layer is selectively etched using the etchant composition in the step of etching the silicon layer.

10 . The method of claim 8 , further comprising etching silicon with the etchant composition without etching silicon oxide.

11 . The method of claim 8 , further comprising forming a silicon pattern by selectively etching silicon with the etchant composition.

12 . A method for fabricating an array substrate, the method comprising the method for forming a pattern according to claim 10 .

13 . An etchant composition containing: (A) an alkaline compound; (B) methylaluminoxane; and (C) water.