Thin-film forming raw material, which is used in atomic layer deposition method, thin-film, method of producing thin-film, and zinc compound
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): M ( R 1 ) x1 [A 1 −N ( R 2 )( R 3 )] y1 (1) in the formula (1), R 1 , R 2 , and R 3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A 1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R 1 , R 2 , and R 3 each represent a methyl group is excluded.
1 . A method of producing a thin-film containing a zinc atom on a surface of a substrate by an atomic layer deposition method, the method comprising:
causing a raw material gas, which is obtained by vaporizing a thin-film forming raw material to adsorb to the surface of the substrate, to thereby form a precursor thin-film, wherein the thin-film forming raw material comprises a compound represented by the following general formula (1):
M ( R 1 ) x1 [A 1 −N ( R 2 )( R 3 )] y (1)
in the formula (1), R 1 , R 2 , and R 3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A 1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents a zinc atom;
evacuating the raw material gas remaining unreacted; and
causing the precursor thin-film to react with a reactive gas, to thereby form the thin-film containing a zinc atom on the surface of the substrate.
2 . The method of producing the thin-film according to claim 1 ,
wherein the reactive gas is an oxidizing gas, and
wherein the thin-film containing the zinc atom is zinc oxide.
3 . The method of producing the thin-film according to claim 2 , wherein the oxidizing gas is a gas containing at least one selected from the group consisting of: water vapor; oxygen; and ozone.