IP Library Granted Patent US 12703913
Granted Patent B2
US 12703913 · App. 18/714,641 · Granted Aug 11, 2026

Deposition of noble metal islets or thin films for its use for electrochemical catalysts with improved catalytic activity

Inventors: Takashi Ono (Yokosuka, JP); Takashi Teramoto (Yokosuka, JP); Christian Dussarrat (Tokyo, JP)
Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
C23C16/45553C23C16/18H01M4/8867
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12703913
App. No.
18/714,641
Granted
Aug 11, 2026
Kind
B2
Abstract

Platinum group metal containing chemical precursors suitable for vapor deposition are disclosed. Methods of using these precursors for Platinum depositions are also disclosed. The chemical precursors and methods are particularly suitable for depositing catalyst material on electrodes.

Claims (14)

1 . A chemical having the formula M(L5)(L6)x 3 wherein L5 is an allyl ligand, L6 is an amidinate ligand and x 3 =1:

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently selected from H; a C 1 -C 6 linear, branched, or cyclic alkyl group; a C 1 -C 6 , branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C 1 -C 6 linear, branched, or cyclic alkylamino group; or a C 1 -C 6 linear, branched, or cyclic fluoroalkyl group.

2 . The chemical of claim 1 having a formula selected from Pt(allyl)(iPr-amd), Pt(allyl)(iPr 2 ,Et-amd), Pt(allyl)(iPr 2 ,Et-amd), or Pt(allyl)(iPr 2 ,nBu-amd), Pt(allyl)(tBu,Et,Me-amd).

3 . A composition comprising one or more of the chemicals of claim 1 .

4 . A method for depositing a Platinum Group Metal containing film, islet or nanodot, the method comprising the steps of:

a) providing a gaseous or vapor phase comprising one or more of the chemicals of claim 1 , and

b) depositing the film, islet or nanodot onto a substrate.

5 . The method of claim 4 comprising depositing the film, islet or nanodot by atomic layer deposition or chemical vapor deposition.

6 . The method of claim 4 comprising depositing the film, islet or nanodot by atomic layer deposition.

7 . The method of claim 4 , wherein a deposition temperature is from about 20° C. to about 300° C.

8 . The method of claim 4 , wherein the substrate is a cathode or a cathode active material.

9 . The method of claim 8 , wherein the substrate is a cathode active material.

10 . The method of claim 4 , wherein the cathode active material, or the cathode active material in the cathode, is selected from the group consisting of a) layered oxides such as Ni-rich cathode materials like NMC (lithium nickel manganese cobalt oxide) and NCA (lithium nickel cobalt aluminum oxide); b) spinel cathode materials such as LMO (lithium manganese oxide), LNMO (lithium nickel manganese oxide); c) Olivine structured cathode materials, in particular the family of Olivine phosphates such as LCP (lithium cobalt phosphate), LNP (lithium nickel phosphate); and combinations thereof.

11 . The method of claim 4 , further comprising a step of providing an oxidizing co-reactant such as O2, O3, H2O, H2O2, NO, NO2, N2O or a NOx; an oxygen-containing silicon precursor, an oxygen-containing tin precursor, a phosphate such as trimethylphosphate, diethyl phosphoramidate, or a sulfate.