Terahertz sensors and related systems and methods
An active radio-frequency (RF) sensing technology for determining the relative and/or absolute state (e.g., position, velocity, and/or acceleration) of a target object (e.g., a person, a car, a truck a lamp post, a utility pole, a building) is described. The sensors described herein operate in the Terahertz band (300 GHz to 3 THz). An active RF sensing device comprises a substrate and first and second semiconductor dies mounted on the substrate. The first semiconductor die has an RF transmit antenna array integrated thereon, and the transmit antenna array comprises a first plurality of RF antennas configured to generate an RF signals having frequency content in the 300 GHz-3 THz band. The second semiconductor die has an RF receive antenna array integrated thereon, and the receive antenna array comprises a second plurality of RF antennas configured to receive RF signals having frequency content in the 300 GHz-3 THz band.
1 . A device, comprising:
a substrate;
a first semiconductor die, mounted on the substrate, having a radio-frequency (RF) transmit antenna array integrated thereon;
a second semiconductor die, mounted on the substrate, having an RF receive antenna array integrated thereon; and
signal generation circuitry comprising at least one component mounted on the substrate, the signal generation circuitry coupled to the first semiconductor die and to the second semiconductor die,
wherein the RF transmit antenna array comprises a plurality of RF antennas configured to transmit RF signals having frequency content in a frequency band of 300 GHZ-3 THz.
2 . The device of claim 1 , wherein the signal generation circuitry comprises:
an oscillator configured to generate a first signal;
a signal generator configured to generate a second signal having a time-varying center frequency by frequency modulating the first signal; and
frequency up-conversion circuitry configured to generate a third signal by up-converting the second signal.
3 . The device of claim 2 ,
wherein the first signal has a center frequency of 1 GHz-20 GHz, and
wherein the frequency up-conversion circuitry is configured to up-convert the second signal by a factor between 30 and 80.
4 . The device of claim 2 , wherein the time-varying center frequency of the second signal changes linearly over time.
5 . The device of claim 2 , wherein the time-varying center frequency of the second signal changes non-linearly over time.
6 . A device, comprising:
a substrate;
a first semiconductor die, mounted on the substrate, having a radio-frequency (RF) transmit antenna array integrated thereon;
a second semiconductor die, mounted on the substrate, having an RF receive antenna array integrated thereon; and
signal generation circuitry comprising at least one component mounted on the substrate, the signal generation circuitry coupled to the first semiconductor die and to the second semiconductor die,
wherein the signal generation circuitry comprises:
an oscillator configured to generate a first signal;
a signal generator configured to generate a second signal having a time-varying center frequency by frequency modulating the first signal; and
frequency up-conversion circuitry configured to generate a third signal by up-converting the second signal, and
wherein the oscillator and the signal generator are mounted on the substrate and a first portion of the frequency up-conversion circuitry is integrated on the first semiconductor die.
7 . The device of claim 6 , wherein a second portion of the frequency up-conversion circuitry is mounted on the substrate.
8 . A device, comprising:
a substrate;
a first semiconductor die, mounted on the substrate, having a radio-frequency (RF) transmit antenna array integrated thereon;
a second semiconductor die, mounted on the substrate, having an RF receive antenna array integrated thereon; and
signal generation circuitry comprising at least one component mounted on the substrate, the signal generation circuitry coupled to the first semiconductor die and to the second semiconductor die,
wherein the signal generation circuitry comprises:
an oscillator configured to generate a first signal;
a signal generator configured to generate a second signal having a time-varying center frequency by frequency modulating the first signal; and
frequency up-conversion circuitry configured to generate a third signal by up-converting the second signal, and
wherein the frequency up-conversion circuitry comprises:
a first plurality of frequency multipliers coupled to the RF transmit antenna array, wherein the first plurality of frequency multipliers is configured to up-convert respective input signals by a frequency multiplication factor; and
a second plurality of frequency multipliers coupled to the RF receive antenna array, wherein the second plurality of frequency multipliers is configured to up-convert respective input signals by the frequency multiplication factor.
9 . The device of claim 8 , wherein the first plurality of frequency multipliers is integrated on the first semiconductor die and the second plurality of frequency multipliers is integrated on the second semiconductor die.
10 . The device of claim 9 , wherein the first and second pluralities of frequency multipliers are mounted on the substrate.
11 . A device, comprising:
a substrate;
a first semiconductor die, mounted on the substrate, having a radio-frequency (RF) transmit antenna array integrated thereon;
a second semiconductor die, mounted on the substrate, having an RF receive antenna array integrated thereon; and
signal generation circuitry comprising at least one component mounted on the substrate, the signal generation circuitry coupled to the first semiconductor die and to the second semiconductor die,
wherein the signal generation circuitry comprises:
an oscillator configured to generate a first signal;
a signal generator configured to generate a second signal having a time-varying center frequency by frequency modulating the first signal; and
frequency up-conversion circuitry configured to generate a third signal by up-converting the second signal, and
wherein the signal generation circuitry further comprises a power divider and the frequency up-conversion circuitry comprises a plurality of frequency multipliers, wherein the power divider is configured to provide the second signal to at least some of the plurality of frequency multipliers.
12 . The device of claim 11 , wherein the plurality of frequency multipliers is coupled to respective antennas of the transmit RF antenna array, and wherein the power divider is configured to cause the antennas of the RF transmit antenna array to transmit RF signals in phase with respect to one another.
13 . The device of claim 11 , wherein the plurality of frequency multipliers is coupled to respective antennas of the transmit RF antenna array, and wherein the signal generation circuitry further comprising a plurality of phase shifters configured to cause the antennas of the RF transmit antenna array to transmit RF signals in phase with respect to one another.
14 . The device of claim 11 , wherein the plurality of frequency multipliers comprises a plurality of harmonic frequency multipliers.
15 . The device of claim 6 , wherein the RF transmit antenna array comprises a plurality of RF antennas configured to transmit RF signals having frequency content in a frequency band of 300 GHz-3 THz.
16 . The device of claim 8 , wherein the RF transmit antenna array comprises a plurality of RF antennas configured to transmit RF signals having frequency content in a frequency band of 300 GHz-3 THz.
17 . The device of claim 11 , wherein the RF transmit antenna array comprises a plurality of RF antennas configured to transmit RF signals having frequency content in a frequency band of 300 GHz-3 THz.
18 . The device of claim 6 , wherein a second portion of the frequency up-conversion circuitry is mounted on the second semiconductor die.
19 . The device of claim 6 , wherein the first signal has a center frequency of 1 GHz-20 GHz.
20 . The device of claim 8 , wherein the first plurality of frequency multipliers and the second plurality of frequency multipliers comprise harmonic frequency multipliers.