Optical interposer structure and method
A semiconductor structure includes an optical interposer having at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer. The semiconductor structure further includes a first die disposed on the optical interposer and electrically connected to the optical interposer; a first substrate under the optical interposer; and conductive connectors under the first substrate.
1 . A semiconductor structure, comprising:
an optical interposer including at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer, and wherein the first and second dielectric layers form a contiguous interface that laterally spans regions of the optical interposer that include the at least one first photonic device and the at least one second photonic device disposed respectively below and above the contiguous interface;
a first die disposed on the optical interposer and electrically connected to the optical interposer;
a first substrate under the optical interposer; and
conductive connectors under the first substrate.
2 . The semiconductor structure of claim 1 , further comprising:
vias going through the first and the second dielectric layers and the first substrate and electrically connected to the conductive connectors.
3 . The semiconductor structure of claim 1 , wherein the optical interposer further includes a redistribution layer on the second dielectric layer.
4 . The semiconductor structure of claim 1 , wherein the at least one first photonic device includes a silicon nitride-based photonic device.
5 . The semiconductor structure of claim 4 , wherein the at least one second photonic device includes a modulator, a photo detector, a waveguide, or a grating coupler.
6 . The semiconductor structure of claim 1 , wherein interfaces between the optical interposer and the first die are free of optical interfaces.
7 . The semiconductor structure of claim 1 , further comprising:
a base substrate under the first substrate, wherein the conductive connectors electrically couple the first substrate to the base substrate.
8 . The semiconductor structure of claim 1 , further comprising:
a fiber array coupled to the at least one first photonic device on a side of the optical interposer.
9 . The semiconductor structure of claim 1 , further comprising:
at least one third photonic device in the second dielectric layer, wherein the at least one second photonic device includes a first photonic modulator, the at least one third photonic device includes a first photo detector, and the first photonic modulator is optically coupled to the first photo detector.
10 . The semiconductor structure of claim 9 , wherein the at least one second photonic device further includes a second photo detector, the at least one third photonic device further includes a second photonic modulator, wherein the second photonic modulator is optically coupled to the second photo detector.
11 . The semiconductor structure of claim 9 , further comprising:
a second die disposed on the optical interposer and electrically connected to the optical interposer, wherein the first photonic modulator is electrically coupled with the first die, and the first photo detector is electrically coupled with the second die.
12 . A semiconductor structure, comprising:
an optical interposer including a first dielectric layer and a second dielectric layer on the first dielectric layer, first photonic devices in the first dielectric layer, second photonic devices in the second dielectric layer, and a redistribution layer on the second dielectric layer, wherein the second dielectric layer is between the first dielectric layer and the redistribution layer, and wherein the first and second dielectric layers form a contiguous interface that laterally spans regions of the optical interposer that include the first photonic devices and the second photonic devices disposed respectively below and above the contiguous interface;
first and second dies disposed on the redistribution layer, wherein the first and the second dies are electrically connected to the redistribution layer;
a first substrate under the first dielectric layer;
conductive connectors under the first substrate; and
vias going through the first and the second dielectric layers and the first substrate and electrically coupling the redistribution layer to the conductive connectors;
wherein the second photonic devices include a photonic modulator, a photo detector, a grating coupler, or a combination thereof.
13 . The semiconductor structure of claim 12 , wherein the first photonic devices include a silicon nitride-based waveguide, and wherein the second photonic devices further include a waveguide.
14 . The semiconductor structure of claim 12 , wherein connections between the optical interposer and the first and the second dies are electrical connections and are free of optical connections.
15 . The semiconductor structure of claim 12 , further comprising:
an organic base substrate under the first substrate, wherein the conductive connectors electrically couple the first substrate to the organic base substrate.
16 . The semiconductor structure of claim 12 , wherein the first die and the second die are optically coupled to each other through the first photonic devices and the second photonic devices.
17 . A semiconductor structure, comprising:
an optical interposer including at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer;
a first die disposed on the optical interposer;
a redistribution layer of the optical interposer connected to the first die, wherein the redistribution layer is over the second dielectric layer;
a substrate under the optical interposer; and
conductive connectors extending from a bottom of the substrate;
wherein the first die and the optical interposer are exclusively connected by electrical connections.
18 . The semiconductor structure of claim 17 , wherein the first dielectric layer and the second dielectric layer both include silicon dioxide and a bonding of the first dielectric layer to the second dielectric layer uses oxide-oxide bonds.
19 . The semiconductor structure of claim 17 , further comprising: a second die disposed on the optical interposer, wherein the second die is connected to the redistribution layer.
20 . The semiconductor structure of claim 17 , further comprising:
vias going through the first dielectric layer and the second dielectric layer and the substrate and connecting the redistribution layer to the conductive connectors.