Substrate processing apparatus and substrate processing method
Proposed is a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a process chamber configured to have a processing space therein, a support unit configured to support a substrate within the processing space, a gas supply unit configured to supply a processing gas to the processing space, and an exhaust unit configured to exhaust the processing space, wherein the gas supply unit may vaporize a processing fluid in a liquid state by using at least one of a bubbling method and a blowing method and supply the processing fluid to the processing space.
1 . A substrate processing apparatus, comprising:
a process chamber configured to have a processing space therein;
a support unit configured to support a substrate within the processing space;
a gas supply unit configured to supply a processing gas to the processing space; and
an exhaust unit configured to evacuate the processing space,
wherein the gas supply unit is configured to vaporize a processing fluid in a liquid state to the processing gas and supplies the processing gas to the processing space,
wherein the gas supply unit comprises:
a gas supply line for supplying the processing gas to the processing space;
a storage tank having a storage space in which the processing fluid in the liquid state is stored; and
a vaporization means for vaporizing the processing fluid in the liquid state in the storage space using a carrier gas, and
wherein the vaporization means comprises:
a bubbler disposed to be immersed in the liquid processing fluid in the storage tank to vaporize the processing fluid in a bubbling manner using the carrier gas, the bubbler connected to a pipe through which the carrier gas is supplied; and
a blower disposed above a surface of the liquid processing fluid in the storage tank, the blower provided in a form surrounding the pipe and configured to vaporize the processing fluid in a blowing manner using the carrier gas.
2 . The substrate processing apparatus of claim 1 ,
wherein the vaporization means receives the carrier gas through a carrier gas supply line, and
wherein on the carrier gas supply line, a three-way valve for controlling a flow direction of the carrier gas is provided.
3 . The substrate processing apparatus of claim 2 ,
wherein the gas supply unit further comprises:
a controller for controlling the three-way valve to select a vaporization method of the processing fluid.
4 . The substrate processing apparatus of claim 3 ,
wherein the controller selects one of a bubbling method, a blowing method, and a mixed method thereof as the vaporization method of the processing fluid on the basis of a user's selection.
5 . The substrate processing apparatus of claim 4 ,
wherein when the controller selects the mixed method, the gas supply unit is controlled to vaporize and supply the processing fluid vaporized by the bubbling method for a predetermined time to the processing space and then supply the processing fluid vaporized by the blowing method.
6 . The substrate processing apparatus of claim 4 , wherein when the controller selects the mixed method, the gas supply unit is controlled to vaporize and supply the processing fluid vaporized by the blowing method for a predetermined time to the processing space and then supply the processing fluid vaporized by the bubbling method.
7 . The substrate processing apparatus of claim 1 , wherein the blower serves as a shield to prevent splashing of the processing fluid by the bubbler.
8 . The substrate processing apparatus of claim 1 , wherein the processing fluid is hexamethyldisilazane (HMDS).
9 . The substrate processing apparatus of claim 1 ,
wherein the gas supply unit is configured to vaporize the processing fluid in the liquid state such that the processing gas supplied to the processing space includes vaporized processing fluid carried by the carrier gas.
10 . Substrate processing equipment, comprising:
an index module where a substrate flows in or out; and
a treating module configured to include a substrate processing apparatus performing a thermal process on the substrate,
wherein the substrate processing apparatus comprises:
a process chamber configured to have a processing space therein;
a support unit configured to support the substrate within the processing space and to include a heating member;
a gas supply unit configured to supply a processing gas to the processing space; and
an exhaust unit configured to evacuate the processing space,
wherein the gas supply unit is configured to vaporize a processing fluid in a liquid state to the processing gas and supplies the processing gas to the processing space,
wherein the gas supply unit comprises:
a gas supply line for supplying the processing gas to the processing space;
a storage tank having a storage space in which the processing fluid in the liquid state is stored; and
a vaporization means for vaporizing the processing fluid in the liquid state in the storage space using a carrier gas, and
wherein the vaporization means comprises:
a bubbler disposed to be immersed in the liquid processing fluid in the storage tank to vaporize the processing fluid in a bubbling manner using the carrier gas, the bubbler connected to a pipe through which the carrier gas is supplied; and
a blower disposed above a surface of the liquid processing fluid in the storage tank, the blower provided in a form surrounding the pipe and configured to vaporize the processing fluid in a blowing manner using the carrier gas.
11 . The substrate processing equipment of claim 10 ,
wherein the vaporization means receives the carrier gas through a carrier gas supply line, wherein on the carrier gas supply line, a three-way valve for controlling a flow direction of the carrier gas is provided, and
the gas supply unit further comprises a controller that controls the three-way valve to select one of a bubbling method, a blowing method, and a mixed method thereof as a vaporization method of the processing fluid on the basis of a user's selection.
12 . The substrate processing equipment of claim 11 ,
wherein when the controller selects the mixed method, the gas supply unit is controlled to vaporize and supply the processing fluid vaporized by the bubbling method for a predetermined time to the processing space and then supply the processing fluid vaporized by the blowing method.
13 . The substrate processing equipment of claim 11 ,
wherein when the controller selects the mixed method, the gas supply unit is controlled to vaporize and supply the processing fluid vaporized by the blowing method for a predetermined time to the processing space and then supply the processing fluid vaporized by the bubbling method.