IP Library Granted Patent US 12705191
Granted Patent B2
US 12705191 · App. 19/024,712 · Granted Aug 11, 2026

Compute express link memory and storage module

Inventors: William Thanos (Boise, ID); Jeremy Werner (Boise, ID)
Assignee: Micron Technology, Inc.
G06F13/1668G06F13/28G06F13/385
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Quick Facts
Patent No.
US 12705191
App. No.
19/024,712
Granted
Aug 11, 2026
Kind
B2
Abstract

An apparatus can include control circuitry, a non-volatile memory device, and a volatile memory device. The control circuitry can be configured to receive a command presented according to a compute express link (CXL) protocol. The control circuitry can be further configured to cause data to be written to the non-volatile memory device or the volatile memory device, or both, in response to receipt of the command while refraining from writing the data to a cache that is external to the apparatus.

Claims (38)

1 . An apparatus, comprising:

a non-volatile memory device;

a volatile memory device; and

control circuitry configured to:

cause data to be written only to the non-volatile memory device in response to a command being a first type of protocol; and

cause the data to be written only to the volatile memory device in response to the command being a second type of protocol.

2 . The apparatus of claim 1 , wherein the control circuitry comprises a universal serial bus interface configured to allow for data to be extracted from the non-volatile memory device or the volatile memory device, or both.

3 . The apparatus of claim 1 , wherein the non-volatile memory device and the volatile memory device are resident on a single substrate that is removably couplable to a host device or a motherboard, or both.

4 . The apparatus of claim 1 , further comprising a random access memory (RAM) device coupled to the non-volatile memory device and the volatile memory device via a dedicated data path, wherein the RAM is configured to offload data transfers between the non-volatile memory device and the volatile memory device.

5 . The apparatus of claim 1 , wherein the control circuitry comprises a first controller configured to operate according to a CXL protocol, a second controller configured to operate according to a non-volatile memory express protocol, and a third controller configured to operate according to a dual data rate protocol.

6 . The apparatus of claim 1 , wherein the control circuitry comprises a first controller configured to exchange CXL.mem commands with the volatile memory device and a second controller configured to exchange CXL.io commands with the non-volatile memory device.

7 . The apparatus of claim 1 , wherein the apparatus has a universal storage module form factor.

8 . The apparatus of claim 1 , wherein the control circuitry further includes a direct memory access (DMA) component configured to receive the command from a host device.

9 . The apparatus of claim 1 , wherein the control circuitry comprises an application-specific integrated circuit.

10 . The apparatus of claim 1 , wherein the control circuitry further includes a direct memory access (DMA) component configured to receive the command from a host device.

11 . The apparatus of claim 1 , wherein the control circuitry comprises a memory controller and a storage controller that are resident on the control circuitry.

12 . A method, comprising:

determining a type of protocol of a first received command and a second received command;

causing data to be written only to a non-volatile memory device in response to the first received command being a first type of protocol while refraining from writing the data to a cache; and

causing data to be written only to a volatile memory device in response to the second received command being a second type of protocol while refraining from writing the data to the cache.

13 . The method of claim 12 , further comprising:

executing CXL.mem commands by a first portion of control circuitry resident on a memory system to access the volatile memory device; and

executing CXL.io commands by a second portion of the control circuitry resident on the memory system to access the non-volatile memory device.

14 . The method of claim 13 , further comprising receiving the first or second command targeting the memory system via control circuitry that comprises a memory controller and a storage controller that are resident on the control circuitry.

15 . The method of claim 14 , extracting data from the non-volatile memory device or the volatile memory device, or both.

16 . The method of claim 13 , further comprising:

receiving the CXL.mem commands by the first portion of control circuitry resident on the memory system; and

receiving the CXL.io commands by the second portion of control circuitry resident on the memory system.

17 . A system, comprising:

a universal storage module (USM) form factor package that includes:

control circuitry;

a non-volatile memory device; and

a volatile memory device, wherein the control circuitry is configured to:

cause data to be written only to the volatile memory device in response to a determination that a received command is a first type of protocol, and

cause the data to be written only to the non-volatile memory device in response to a determination that the command is a second type of protocol.

18 . The system of claim 17 , wherein the control circuitry comprises a first controller configured to exchange a CXL.mem command with the volatile memory device and a second controller configured to exchange a CXL.io command with the non-volatile memory device and a third controller configured to operate according to a dual data rate protocol.

19 . The system of claim 17 , further comprising a random access memory (RAM) device coupled to the non-volatile memory device and the volatile memory device via a dedicated data path, wherein the RAM is configured to offload data transfers between the non-volatile memory device and the volatile memory device.

20 . The system of claim 17 , wherein the control circuitry further comprises a universal serial bus interface configured to allow for data to be extracted from the non-volatile memory device or the volatile memory device, or both.