IP Library Granted Patent US 12706151
Granted Patent B2
US 12706151 · App. 18/945,338 · Granted Aug 11, 2026

Storage device for determining memory cell type after data input during program operation and operating method thereof

Inventors: Ie Ryung Park (Icheon-si, KR); Dong Sop Lee (Icheon-si, KR)
Assignee: SK hynix Inc.
G11C16/10G06F3/061G06F3/0658G06F3/0659G06F3/0673G11C16/30
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12706151
App. No.
18/945,338
Granted
Aug 11, 2026
Kind
B2
Abstract

A storage device may input a program command requesting to program target data into the memory, input the target data into a memory, and input the program confirmation command into the memory after inputting the program command and the target data into the memory. In this case, the program confirmation command may include information about a cell type of memory cells to be programmed with target data among a plurality of memory cells.

Claims (24)

1 . A storage device comprising:

a memory including a plurality of memory cells; and

a controller configured to,

input a program command requesting to program target data to all or a part of the plurality of memory cells into the memory,

input the target data into the memory, and

input, after inputting the program command and the target data into the memory, a program confirmation command instructing start of an operation of programming the target data into the memory.

2 . The storage device of claim 1 , wherein the controller configured to input, after inputting the target data into the memory, address information indicating locations of memory cells to be programmed with the target data into the memory together with the program confirmation command.

3 . The storage device of claim 2 , wherein the address information includes information instructing at least one of block, wordline and page buffer corresponding to the memory cells to be programmed with the target data.

4 . The storage device of claim 1 , wherein, when a power-down event occurs after inputting the target data into the memory, the memory determines a cell type of memory cells to be programmed with the target data from among the plurality of memory cells as a target type.

5 . The storage device of claim 4 , further comprising an auxiliary power supply for supplying power to the storage device when the power-down event occurs,

wherein the auxiliary power supply supplies power to the memory when the power-down event occurs after inputting the target data into the memory.

6 . The storage device of claim 4 , wherein the target type is a single level cell (SLC).

7 . The storage device of claim 4 , wherein an auxiliary power supply includes a capacitor that is charged when power is supplied from outside of the storage device.

8 . The storage device of claim 7 , wherein the capacitor is selected from a group consisting of a ceramic capacitor, a multilayer ceramic capacitor, a high dielectric constant capacitor, an electrolytic capacitor, and a tantalum polymer capacitor.

9 . An operating method of a storage device comprising:

inputting a program command requesting to program target data to all or a part of a plurality of memory cells into a memory including the plurality of memory cells;

inputting the target data into the memory; and

inputting, after inputting the program command and the target data into the memory, a program confirmation command instructing start of an operation of programming the target data into the memory.

10 . The operating method of claim 9 , further comprising

inputting, after inputting the target data into the memory, address information indicating locations of memory cells to be programmed with the target data into the memory together with the program confirmation command.

11 . The operating method of claim 10 , wherein the address information includes information instructing at least one of block, wordline and page buffer corresponding to the memory cells to be programmed with the target data.

12 . The operating method of claim 9 , wherein the inputting the program confirmation command comprises, when a power-down event occurs after inputting the target data into the memory, determining a cell type of memory cells to be programmed with the target data, from among the plurality of memory cells, as a target type.

13 . The operating method of claim 12 , wherein power supplied to the memory is supplied from an auxiliary power supply for supplying power to the storage device when the power-down event occurs.

14 . The operating method of claim 12 , wherein the target type is a single level cell (SLC).