Selective management of erase operations in memory devices that enable suspend commands
A memory device includes a memory array comprising memory cells and control logic operatively coupled with the memory array. The control logic causes, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of the memory array. The control logic tracks a number of suspend commands received from a processing device, including suspend commands received while memory cells of the one or more sub-blocks are being erased. The control logic causes, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation. The control logic, in response to the number of suspend commands satisfying a threshold criterion, alerts the processing device to terminate sending suspend commands.
1 . A memory device comprising:
a memory array comprising memory cells; and
control logic operatively coupled with the memory array, the control logic to perform operations comprising:
causing, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of the memory array;
tracking a number of suspend commands received from a processing device, including suspend commands received while memory cells of the one or more sub-blocks are being erased;
causing, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation; and
in response to the number of suspend commands satisfying a threshold criterion, sending an alert to the processing device to terminate sending suspend commands until after completion of the true erase sub-operation.
2 . The memory device of claim 1 , wherein sending the alert to the processing device comprises sending, to the processing device, a value corresponding to the number of suspend commands.
3 . The memory device of claim 1 , wherein the operations further comprise detecting the number of suspend commands satisfying the threshold criterion after the memory cells begin to be erased.
4 . The memory device of claim 1 , wherein the operations further comprise stopping a timer in response to each suspend command, the timer tracking a time duration of the true erase sub-operation, wherein sending the alert to the processing device comprises sending, to the processing device, at least one of a total cumulative number of suspend commands received from the processing device or a total cumulative amount of time tracked by the timer.
5 . The memory device of claim 4 , wherein the operations further comprise, after each suspend command is received:
performing an erase recovery of the one or more sub-blocks;
restarting the timer in response to receipt of a resume command; and
causing re-ramping of a memory line to resume the true erase sub-operation.
6 . The memory device of claim 1 , further comprising a counter coupled with the control logic, the counter to track the number of suspend commands received from the processing device.
7 . A memory device comprising:
a memory array comprising memory cells; and
control logic operatively coupled with the memory array, the control logic to perform operations comprising:
causing, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of the memory array;
tracking a number of suspend commands received from a processing device during time periods that a memory line of the memory array is caused to ramp towards an erase voltage of the erase pulse;
causing, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation; and
in response to the number of suspend commands satisfying a threshold criterion, sending an alert to the processing device to terminate sending suspend commands until after completion of the true erase sub-operation.
8 . The memory device of claim 7 , further comprising a counter coupled with the control logic, the counter to track the number of suspend commands received from the processing device.
9 . The memory device of claim 7 , wherein the operations further comprise stopping a timer in response to each suspend command, the timer tracking a time duration of the time periods.
10 . The memory device of claim 9 , wherein the operations further comprise, after each suspend command is received:
performing an erase recovery of the one or more sub-blocks;
restarting the timer in response to receipt of a resume command; and
causing re-ramping of the memory line to resume the true erase sub-operation.
11 . The memory device of claim 9 , wherein the operations further comprise, in response to the number of suspend commands satisfying the threshold criterion:
determining a voltage offset to be applied to the erase voltage of the erase pulse, the voltage offset corresponding to the number of suspend commands tracked and the time duration and being dependent on a type of multi-level memory cells of the memory array;
changing the erase voltage by the voltage offset; and
causing the memory line of the one or more sub-blocks to ramp to the changed erase voltage.
12 . The memory device of claim 7 , wherein the operations further comprise stopping a timer in response to each suspend command, the timer tracking a time duration of the true erase sub-operation, and wherein sending the alert to the processing device comprises sending, to the processing device, at least one of a total cumulative number of suspend commands received from the processing device or a total cumulative amount of time tracked by the timer.
13 . A method comprising:
causing, by control logic of a memory device, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of a memory array;
tracking a number of suspend commands received from a processing device, including suspend commands received while memory cells of the one or more sub-blocks are being erase;
causing, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation; and
in response to the number of suspend commands satisfying a threshold criterion, sending an alert, by the control logic, to the processing device to terminate sending suspend commands until after completion of the true erase sub-operation.
14 . The method of claim 13 , wherein sending the alert to the processing device comprises sending, to the processing device, a value corresponding to the number of suspend commands.
15 . The method of claim 13 , further comprising stopping a timer in response to each suspend command, the timer tracking a time duration of the true erase sub-operation, and wherein sending the alert to the processing device comprises sending, to the processing device, at least one of a total cumulative number of suspend commands received from the processing device or a total cumulative amount of time tracked by the timer.
16 . The method of claim 13 , further comprising detecting the number of suspend commands satisfying the threshold criterion after the memory cells begin to be erased.
17 . The method of claim 13 , further comprising stopping a timer in response to each suspend command, the timer tracking a time duration of the true erase sub-operation.
18 . The method of claim 17 , further comprising, after each suspend command is received:
performing an erase recovery of the one or more sub-blocks;
restarting the timer in response to receipt of a resume command; and
causing re-ramping of a memory line to resume the true erase sub-operation.
19 . The method of claim 13 , further comprising tracking, using a counter coupled to the control logic, the number of suspend commands received from the processing device.