Component configured with intrinsic shielding and process of implementing the same
View Patent ↗A shielded capacitor includes a first terminal; one or more first capacitor metals electrically connected to the first terminal; a second terminal; one or more second capacitor metals electrically connected to the second terminal. The shielded capacitor further includes a shielding structure. The shielding structure being configured to limit a variation of an RF characteristic due to a presence of a metallic structure.
1 . A shielded capacitor comprising:
a first terminal;
one or more first capacitor metals electrically connected to the first terminal;
a second terminal;
one or more second capacitor metals electrically connected to the second terminal;
a shielding structure;
the shielding structure being configured to limit a variation of an RF characteristic due to a presence of a metallic structure; and
a dielectric material located below the shielding structure,
wherein the shielding structure extends laterally at least a distance of 50%-80%, between side edges of the shielded capacitor.
2 . The shielded capacitor according to claim 1 wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
3 . The shielded capacitor according to claim 1 wherein the shielding structure comprises a metal layer, a sputtered metal layer, a plurality of metal layers, and/or a plurality of sputtered metal layers.
4 . The shielded capacitor according to claim 1 wherein the shielding structure comprises a sputtered metal layer; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
5 . The shielded capacitor according to claim 1 wherein the shielding structure is arranged within and/or adjacent an upper surface of the shielded capacitor.
6 . The shielded capacitor according to claim 1 wherein the shielding structure is configured to be electrically isolated from the first terminal and/or the second terminal.
7 . The shielded capacitor according to claim 1 wherein the shielding structure is configured to be electrically connected to the first terminal; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
8 . The shielded capacitor according to claim 1 wherein the shielding structure comprises a first end and a second end; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
9 . The shielded capacitor according to claim 8 wherein the first end is electrically connected to the first terminal.
10 . The shielded capacitor according to claim 1 wherein the one or more first capacitor metals comprises a first lower capacitor metal and a first upper capacitor metal, with the dielectric material arranged therebetween; and wherein the one or more second capacitor metals comprises a second lower capacitor metal and a second upper capacitor metal; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
11 . The shielded capacitor according to claim 1 wherein the shielding structure is electrically connected to the first terminal; wherein the shielding structure is isolated from the second terminal; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure.
12 . The shielded capacitor according to claim 10 wherein the first upper capacitor metal is configured as the shielding structure.
13 . The shielded capacitor according to claim 10 wherein the first capacitor metal and the first upper capacitor metal are arranged vertically above the second upper capacitor metal.
14 . The shielded capacitor according to claim 1 wherein two vertically uppermost implementations of the one or more first capacitor metals are connected to the first terminal.
15 . The shielded capacitor according to claim 1 wherein the shielded capacitor comprises a multilayer capacitor, a ceramic capacitor, and/or a multilayer ceramic capacitor.
16 . The shielded capacitor according to claim 1 wherein the shielding structure is arranged on a plurality surfaces of the shielded capacitor including a surface adjacent the metallic structure.
17 . The shielded capacitor according to claim 16 wherein the shielding structure is electrically connected to a substrate.
18 . The shielded capacitor according to claim 1 wherein the shielding structure is arranged on a top surface, a bottom surface, and side surfaces of the shielded capacitor.
19 . The shielded capacitor according to claim 1 wherein the shielded capacitor is configured as a surface mount device (SMD).
20 . A device comprising the shielded capacitor according to claim 1 and further comprising the metallic structure.
21 . The device according to claim 20 wherein the device comprises an RF device, an RF power device, an RF power amplifier, a flip chip RF device, a flip chip RF power device, a flip chip RF power amplifier, a flip chip power amplifier, a low noise amplifier, a filter, and/or a mixer.
22 . The device according to claim 20 wherein the device comprises a package and/or a packaged implementation of an RF device, an RF power device, an RF power amplifier, a flip chip RF device, a flip chip RF power device, a flip chip RF power amplifier, a flip chip power amplifier, a low noise amplifier, a filter, and/or a mixer.
23 . The device according to claim 20 wherein the metallic structure comprises a cooling device, a topside cooling device, a heat sink, a topside heat sink, a support, a surface, a package support, a package surface, a package support surface, a flange, a metal flange, a leadframe, a metal leadframe, a coin, and/or a copper coin.
24 . The device according to claim 20 further comprising a substrate and the shielded capacitor is mounted to the substrate, wherein the substrate comprises a circuit board, a printed circuit board (PCB), a printed wiring board (PWB), and/or an IPD (integrated passive device) substrate.
25 . The device according to claim 24 wherein the substrate comprises a first terminal and a second terminal, wherein the first terminal of the shielded capacitor is connected to the first terminal of the substrate; and wherein the second terminal of the shielded capacitor is connected to the second terminal of the substrate.
26 . The device according to claim 20 further comprising support stands configured to support the metallic structure.
27 . A shielded capacitor comprising:
a first terminal;
one or more first capacitor metals electrically connected to the first terminal;
a second terminal;
one or more second capacitor metals electrically connected to the second terminal;
a shielding structure;
the shielding structure being configured to limit a variation of an RF characteristic due to a presence of a metallic structure,
wherein the shielding structure comprises a first end and a second end; and wherein the shielding structure is arranged on and/or within a surface of the shielded capacitor adjacent the metallic structure;
wherein the first end and the second end are electrically isolated from the first terminal and the second terminal; and
wherein the shielding structure extends laterally at least a distance of 50%-80%, between side edges of the shielded capacitor.