Plasma etching apparatus and semiconductor processing system

1 . A plasma etching apparatus comprising:

a housing having a processing space;

a support inside the housing, the support configured to support a substrate and comprising at least one lower electrode;

at least one upper electrode facing the at least one lower electrode;

a sidewall electrode disposed on a sidewall of the housing;

a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power;

an upper RF power source connected to the at least one upper electrode and configured to apply RF power;

a lower insulator adjacent to the at least one lower electrode, the lower insulator comprising a ring shape that surrounds the at least one lower electrode in horizontal directions;

an upper insulator adjacent to the at least one upper electrode, the upper insulator comprising a ring shape that surrounds the at least one upper electrode in the horizontal directions;

at least one lower detector embedded in the ring shape of the lower insulator; and

at least one upper detector embedded in the ring shape of the upper insulator.

2 . The plasma etching apparatus of claim 1 , wherein

the at least one lower detector is configured to detect an average value of a voltage or a current of the at least one lower electrode, and

the at least one upper detector is configured to detect an average value of a voltage or a current of the at least one upper electrode.

3 . The plasma etching apparatus of claim 1 , wherein

the at least one lower detector comprises a plurality of lower detectors,

the at least one upper detector comprises a plurality of upper detectors,

the plurality of lower detectors are spaced apart from each other at a same first interval in a first direction within the ring shape of the lower insulator, and

the plurality of upper detectors are spaced apart from each other at a same second interval in the first direction within the ring shape of the upper insulator.

4 . The plasma etching apparatus of claim 3 , wherein

the first interval and the second interval are different from each other.

5 . The plasma etching apparatus of claim 3 , wherein

a total number of the plurality of lower detectors and a total number of the plurality of upper detectors are equal to each other.

6 . The plasma etching apparatus of claim 3 , wherein

a total number of the plurality of lower detectors and a total number of the plurality of upper detectors are different from each other.

7 . The plasma etching apparatus of claim 3 , wherein

the plurality of lower detectors are positioned on a same first plane within the lower insulator, and

the plurality of upper detectors are positioned on a same second plane within the upper insulator.

8 . The plasma etching apparatus of claim 3 , wherein

the at least one lower detector comprises n lower detectors, and the at least one upper detector comprises m upper detectors,

n and m are natural number of 2 or greater,

the at least one lower electrode comprises n number of lower electrodes, and

the at least one upper electrode comprises m number of upper electrodes.

9 . The plasma etching apparatus of claim 8 , further comprising:

m first phase shifters connected between the m upper electrodes and the upper RF power source; and

n second phase shifters connected between the n lower electrodes and the lower RF power source.

10 . The plasma etching apparatus of claim 1 , further comprising:

a synchronization signal processing circuit connected to the at least one lower detector and the at least one upper detector, and configured to perform synchronization on a lower voltage and a lower current measured by the at least one lower detector, and an upper voltage and an upper current measured by the at least one upper detector.

11 . The plasma etching apparatus of claim 10 , further comprising:

a controller configured to control at least one from among the upper RF power source and the lower RF power source so that a phase difference between the lower voltage and the upper voltage synchronized by the synchronization signal processing circuit matches a target voltage phase difference or a phase difference between the lower current and the upper current synchronized by the synchronization signal processing circuit matches a target current phase difference.

12 . The plasma etching apparatus of claim 11 , wherein

the controller is further configured to shift-control a phase of a voltage or a current output by at least one from among the upper RF power source and the lower RF power source.

13 . The plasma etching apparatus of claim 1 , wherein

the lower RF power source and the upper RF power source are configured to apply power of a same frequency.

14 . A plasma etching apparatus comprising:

a housing having a processing space;

an electrostatic chuck inside the housing, the electrostatic chuck configured to support a substrate and comprising at least one lower electrode;

at least one upper electrode facing the at least one lower electrode;

a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply lower RF power of a first frequency;

an upper RF power source connected to the at least one upper electrode and configured to supply upper RF power of the first frequency;

a lower insulator disposed adjacently to the at least one lower electrode comprising a ring shape that surrounds the at least one lower electrode in horizontal directions, the ring shape of the lower insulator embedded with at least one lower detector;

an upper insulator disposed adjacent to the at least one upper electrode and comprising a ring shape that surrounds the at least one upper electrode in the horizontal directions, the ring shape of the upper insulator embedded with at least one upper detector; and

a controller configured to perform closed loop phase shift control on at least one from among the upper RF power source and the lower RF power source by performing a calculation that includes a lower parameter measurement value obtained by the at least one lower detector and an upper parameter measurement value obtained by the at least one upper detector,

wherein a total number of the at least one lower electrode is equal to a total number of the at least one lower detector, and a total number of the at least one upper electrode is equal to a total number of the at least one upper detector.

15 . The plasma etching apparatus of claim 14 , wherein

the total number of the at least one lower detector and the total number of the at least one upper detector are each equal to or greater than 4 and equal to or less than 8.

16 . The plasma etching apparatus of claim 14 , further comprising:

at least one phase shifter connected to the lower RF power source and configured to shift a phase of a voltage or a current output by the lower RF power source,

wherein a total number of the at least one phase shifter is equal to the total number of the at least one lower electrode, and the at least one phase shifter is connected to the at least one lower electrode, respectively.

17 . The plasma etching apparatus of claim 14 , further comprising:

at least one phase shifter connected to the upper RF power source and configured to shift a phase of a voltage or a current output by the upper RF power source,

wherein a total number of the at least one phase shifter is equal to the total number of the at least one upper electrode, and the at least one phase shifter is connected to the at least one upper electrode, respectively.

18 . The plasma etching apparatus of claim 14 , wherein

the lower parameter measurement value is an average value of a current or voltage detected from the at least one lower electrode, and

the upper parameter measurement value is an average value of a current or voltage detected from the at least one upper electrode, and

the calculation includes at least one from among a calculation of a phase difference between the average value of the current detected from the at least one upper electrode and the average value of the current detected from the at least one lower electrode and a calculation of a phase difference between the average value of the voltage detected from the at least one upper electrode and the average value of the voltage detected from the at least one lower electrode.

19 . The plasma etching apparatus of claim 1 , wherein the at least one upper electrode is separated from the sidewall electrode by the upper insulator.

20 . The plasma etching apparatus of claim 1 , wherein the lower insulator is on an upper surface of the support, and

wherein the plasma etching apparatus further comprises a focus ring that is on an upper surface of the lower insulator.