Substrate processing apparatus and substrate processing method
The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.
1 . A substrate processing apparatus, comprising:
a chamber defining an interior space;
a support configured to support a substrate in the interior space;
a ring disposed on an edge region of the support when viewed from above;
an impedance controller electrically connected to the ring to control a flow or density of plasma in an edge region of the substrate;
a filter unit disposed between the ring and the impedance controller; and
a cable configured to electrically connect the filter unit and the impedance controller,
wherein the impedance controller includes
an RF power source configured to transmit an RF signal to the ring; and
an impedance control circuit having a variable capacitor and being configured to control a flow or density of the plasma generated above the ring,
wherein the filter unit is configured to filter out harmonics generated by the impedance controller to prevent the harmonics from being transferred to the ring, and
wherein the filter unit is configured to filter out harmonics generated by the RF power source to prevent the harmonics from being transferred to the ring.
2 . The substrate processing apparatus of claim 1 , wherein the filter unit is configured to filter out a third harmonic of the harmonics generated by the impedance controller to prevent the third harmonic from being transferred to the ring.
3 . The substrate processing apparatus of claim 1 , wherein the filter unit includes
a housing defining an accommodation space; and
a filter in the accommodation space and configured to filter out the harmonics.
4 . The substrate processing apparatus of claim 3 , wherein the housing defines at least one heat dissipation hole that is configured to dissipate heat generated in the interior space.
5 . The substrate processing apparatus of claim 1 , wherein the ring further includes
an edge ring disposed under the edge region of the substrate and/or in an outer periphery of the edge region of the substrate; and
a coupling ring disposed under the edge ring, and
wherein the impedance controller is electrically connected to the coupling ring.
6 . The substrate processing apparatus of claim 5 , wherein the coupling ring includes
a ring electrode electrically connected to the impedance controller; and
an insulating body configured to surround the ring electrode, the insulating body being made of an insulating material.
7 . A substrate processing apparatus using plasma comprising:
a chamber defining an interior space;
a support configured to support a substrate in the interior space;
a power source configured to generate the plasma in the interior space;
a ring configured to adjust a flow or density of the plasma transferred to the substrate;
an impedance controller electrically connected to the ring and configured to adjust an impedance for controlling the flow or density of the plasma transferred to the substrate;
a filter unit disposed between the impedance controller and the ring; and
a cable configured to electrically connect the filter unit and the impedance controller,
wherein the impedance controller includes
an RF power source configured to transmit an RF signal to the ring; and
an impedance control circuit configured to adjust the density of the plasma transferred to the substrate,
wherein the filter unit is configured to filter out a signal having a frequency of an integer multiple of the RF signal transmitted by the RF power source.
8 . The substrate processing apparatus of claim 7 , wherein the filter unit is configured to filter out a signal having a frequency three times a frequency of the RF signal transmitted by the RF power source.
9 . The substrate processing apparatus of claim 8 , further comprising:
a RF cable configured to electrically connect the filter unit and the impedance controller.
10 . The substrate processing apparatus of claim 7 , wherein the filter unit includes
a housing defining an accommodation space; and
a filter in the accommodation space to filter harmonics generated by the impedance controller from being transmitted to the ring.
11 . The substrate processing apparatus of claim 10 , wherein the housing defines at least one heat dissipation hole that is configured to dissipate heat generated by the filter to outside.
12 . The substrate processing apparatus of claim 7 , the ring including
an edge ring disposed under an edge region of the substrate and/or in an outer periphery of the edge region of the substrate.
13 . The substrate processing apparatus of claim 12 , wherein the edge ring is configured to surround the edge region of the substrate or the outer periphery of the edge region of the substrate when viewed from above,
wherein the ring has a ring shape and is disposed below the edge ring.