Apparatus and method for processing substrate using plasma
Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.
1 . An apparatus for processing a substrate comprising:
a first space disposed between an electrode and an ion blocker;
a second space formed between the ion blocker and a shower head spaced apart from each other;
a processing space disposed under the shower head and the ion blocker and for processing a substrate;
a first gas supply module for providing a first gas for generating plasma to the first space; and
a second gas supply module for providing an unexcited second gas to the processing space,
wherein the shower head includes a first shower region and a second shower region surrounding the first shower region, the shower head comprises supply holes configured to directly supply the second gas, supplied to the shower head by the second gas supply module, toward the processing space disposed under the shower head, wherein the supply holes are formed only on a lower surface facing the processing space positioned under the shower head and the supply holes formed only on the lower surface of the shower head are located only at the second shower region of the shower head surrounding the first shower region where the supply holes formed only on the lower surface of the shower head are not formed,
wherein the apparatus further comprises the ion blocker having a first filter region and a second filter region surrounding the first filter region, the ion blocker comprises other supply holes configured to supply the second gas, and the other supply holes of the ion blocker are located only at the first filter region which corresponds to the first shower region of the shower head where the supply holes of the shower head are not formed and is surrounded by the second filter region of the ion blocker, wherein the second filter region of the ion blocker corresponds to the second shower region of the shower head where the supply holes of the shower head are formed, and where the other supply holes of the ion block are not formed, and
wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen containing gas, and the substrate includes a photoresist pattern including carbon.
2 . The apparatus of claim 1 , wherein the first gas is an H 2 gas and the second gas is an NH 3 gas.
3 . The apparatus of claim 1 further comprises,
a support module installed in the processing space and for supporting the substrate,
wherein a temperature of the support module is lower than a curing temperature of a photoresist including carbon.
4 . The apparatus of claim 3 , wherein the temperature of the support module is greater than 0° C. and less than 50° C.
5 . The apparatus of claim 1 , wherein the second gas is supplied through the first filter region and the second shower region, and is not supplied through the second filter region and the first shower region.
6 . The apparatus of claim 1 , wherein the second gas is supplied through the first shower region and the second shower region, wherein a flow rate of the second gas supplied through the first shower region and a flow rate of the second gas supplied through the second shower region are different from each other.
7 . An apparatus for processing a substrate comprising:
a first space disposed between an electrode connected to a high-frequency power supply and an ion blocker spaced apart from the electrode, in which plasma is generated based on a hydrogen gas;
a second space disposed between the ion blocker and a shower head;
a processing space disposed under the shower head and for processing a substrate;
a first gas supply module for providing the hydrogen gas to the first space through the electrode; and
a second gas supply module for providing a second gas comprising an ammonia gas,
wherein the shower head includes a first shower region and a second shower region surrounding the first shower region, the shower head comprises supply holes configured to directly supply the second gas, supplied to the shower head by the second gas supply module, toward the processing space disposed under the shower head, wherein the supply holes are formed only on a lower surface facing the processing space positioned under the shower head and the supply holes formed only on the lower surface of the shower head are located only at the second shower region of the shower head surrounding the first shower region where the supply holes formed only on the lower surface of the shower head are not formed,
wherein the apparatus further comprises the ion blocker having a first filter region and a second filter region surrounding the first filter region, the ion blocker comprises other supply holes configured to supply the second gas, and the other supply holes of the ion blocker are located only at the first filter region which corresponds to the first shower region of the shower head where the supply holes of the shower head are not formed and is surrounded by the second filter region of the ion blocker, wherein the second filter region of the ion blocker corresponds to the second shower region of the shower head where the supply holes of the shower head are formed, and where the other supply holes of the ion block are not formed,
wherein a substrate including a photoresist pattern including carbon is located in the processing space, and wherein ammonia not excited in the processing space and hydrogen radicals formed by the plasma perform isotropic etching on the photoresist pattern to reduce edge roughness of the photoresist pattern.
8 . The apparatus of claim 7 further comprises,
a support module installed in the processing space and for supporting the substrate,
wherein a temperature of the support module is lower than a curing temperature of a photoresist including carbon.
9 . The apparatus of claim 8 , wherein a temperature of the support module is greater than 0° C. and less than 50° C.
10 . The apparatus of claim 7 , wherein the isotropic etching is able to etch a side surface of the photoresist pattern to a level of Angstroms (Å).
11 . The apparatus of claim 1 , wherein the shower head further comprises other supply holes passing through the shower head, wherein the other supply holes of the showerhead are formed at the first shower region where the supply holes formed only on the lower surface of the shower head are not formed and formed at the second shower region surrounding the first shower region and having the supply holes formed only on the lower surface of the shower head.
12 . The apparatus of claim 7 , wherein the shower head further comprises other supply holes passing through the shower head, wherein the other supply holes of the showerhead are formed at the first shower region where the supply holes formed only on the lower surface of the shower head are not formed and formed at the second shower region surrounding the first shower region and having the supply holes formed only on the lower surface of the shower head.