IP Library › Granted Patent US 12706282
Granted Patent B2
US 12706282 · App. 17/015,100 · Granted Aug 11, 2026

Substrate support and substrate processing apparatus

Inventor: Chishio Koshimizu (Miyagi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01J37/32697H01J37/32642H01J37/32724H10P72/722
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Quick Facts
Patent No.
US 12706282
App. No.
17/015,100
Granted
Aug 11, 2026
Kind
B2
Abstract

A structure efficiently provides bias power to an object placed on a substrate support. A substrate support includes a dielectric portion and at least one electrode. The at least one electrode is located in the dielectric portion to provide bias power to an object placed on the dielectric portion.

Claims (44)

1 . A plasma processing apparatus, comprising:

a chamber;

a substrate support disposed in the chamber, the substrate support including:

a first electrostatic chuck portion configured to hold a substrate placed on the first electrostatic chuck portion; and

a second electrostatic chuck portion surrounding the first electrostatic chuck portion, the second electrostatic chuck portion being configured to hold an edge ring placed on the second electrostatic chuck portion, the second electrostatic chuck portion including;

a first edge chucking electrode,

a second edge chucking electrode separated from the first edge chucking electrode on a same plane, and

an edge bias electrode extending along a length of both the first edge chucking electrode and the second edge chucking electrode, wherein the first edge chucking electrode and the second edge chucking electrode are located above the edge bias electrode which is located in the second electrostatic chuck portion; and

a voltage pulse generator electrically connected to the edge bias electrode and configured to generate a pulsed direct current (DC) voltage.

2 . The plasma processing apparatus according to claim 1 , wherein the second electrostatic chuck portion includes a bipolar electrostatic chuck.

3 . The plasma processing apparatus according to claim 1 , wherein

the second electrostatic chuck portion further includes a dielectric portion, and

the first and second edge chucking electrodes and the edge bias electrode are located in the dielectric portion.

4 . The plasma processing apparatus according to claim 3 , wherein

the first electrostatic chuck portion and the second electrostatic chuck portion commonly include the dielectric portion, and

the first electrostatic chuck portion includes a central chucking electrode located in the dielectric portion.

5 . The plasma processing apparatus according to claim 3 , wherein

the dielectric portion includes a first dielectric portion and a second dielectric portion,

the first electrostatic chuck portion includes

the first dielectric portion, and

a central chucking electrode located in the first dielectric portion, and

the second electrostatic chuck portion includes the second dielectric portion.

6 . The plasma processing apparatus according to claim 5 , wherein the second dielectric portion has a smaller thickness than the first dielectric portion.

7 . The plasma processing apparatus according to claim 3 , further comprising:

a heater located in the dielectric portion included in the second electrostatic chuck portion.

8 . The plasma processing apparatus according to claim 1 , further comprising:

a gas line configured to provide a heat-transfer gas between the second electrostatic chuck portion and the edge ring.

9 . The plasma processing apparatus according to claim 1 , further comprising:

a base that is electrically conductive, wherein

the first electrostatic chuck portion and the second electrostatic chuck portion are located on the base.

10 . The plasma processing apparatus according to claim 9 , wherein

the first electrostatic chuck portion includes a first dielectric portion,

the second electrostatic chuck portion includes a second dielectric portion, and

the first dielectric portion is separated from the second dielectric portion by a groove that extends into the base.

11 . The plasma processing apparatus according to claim 10 , wherein the second dielectric portion has a smaller thickness than the first dielectric portion.

12 . The plasma processing apparatus according to claim 10 , wherein the groove has a bottom that is between an upper surface of the base and a lower surface of the base.

13 . The plasma processing apparatus according to claim 1 , wherein the pulsed DC voltage has a negative polarity.

14 . The plasma processing apparatus according to claim 1 , further comprising a gas line which separates the first edge chucking electrode from the second edge chucking electrode.

15 . The plasma processing apparatus according to claim 1 , further comprising a filter which prevents RF power generated by an RF power supply from entering a bias power supply which supplies a bias to an electrode of the first electrode chuck portion.

16 . The plasma processing apparatus according to claim 1 , further comprising a filter which reduces RF power generated by an RF power supply from entering a bias power supply which supplies a bias to an electrode of the first electrode chuck portion.

17 . The plasma processing apparatus according to claim 1 , wherein

the first edge chucking electrode has a negative potential,

the second edge chucking electrode has a positive potential, and

the first edge chucking electrode and the second edge chucking electrode form a bipolar electrode.